KR920013627A - Titanium Silicide Formation Method of Semiconductor Device - Google Patents

Titanium Silicide Formation Method of Semiconductor Device Download PDF

Info

Publication number
KR920013627A
KR920013627A KR1019900021460A KR900021460A KR920013627A KR 920013627 A KR920013627 A KR 920013627A KR 1019900021460 A KR1019900021460 A KR 1019900021460A KR 900021460 A KR900021460 A KR 900021460A KR 920013627 A KR920013627 A KR 920013627A
Authority
KR
South Korea
Prior art keywords
semiconductor device
titanium silicide
formation method
silicide formation
oxide film
Prior art date
Application number
KR1019900021460A
Other languages
Korean (ko)
Other versions
KR0166785B1 (en
Inventor
권오경
하용안
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900021460A priority Critical patent/KR0166785B1/en
Publication of KR920013627A publication Critical patent/KR920013627A/en
Application granted granted Critical
Publication of KR0166785B1 publication Critical patent/KR0166785B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음.No content.

Description

반도체 소자의 티타늄 실리사이드 형성 방법Titanium Silicide Formation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 (a)-(c)는 본 발명에 따른 티타늄 실리사이드 형성을 형성하기 위한 공정도이다.2 (a)-(c) are process diagrams for forming titanium silicide formation according to the present invention.

Claims (1)

기판상에 산화막, 폴리실리콘을 차례로 도포한 후 이온주입 및 네트브산화막을 에칭하는 공정과, 그 상부에 스퍼터링으로 티타늄층을 형성한 후 비정질실리콘을 도포하고 어닐링하는 공정으로 이루어진 반도체 소자의 티타늄실리사이드 형성 방법.Titanium silicide of a semiconductor device comprising a step of coating an oxide film and polysilicon on a substrate in turn, followed by etching an ion implantation and a net oxide film, and forming a titanium layer by sputtering thereon, and then applying and annealing amorphous silicon. Forming method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900021460A 1990-12-22 1990-12-22 Method for forming titanium silicide of semiconductor device KR0166785B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900021460A KR0166785B1 (en) 1990-12-22 1990-12-22 Method for forming titanium silicide of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900021460A KR0166785B1 (en) 1990-12-22 1990-12-22 Method for forming titanium silicide of semiconductor device

Publications (2)

Publication Number Publication Date
KR920013627A true KR920013627A (en) 1992-07-29
KR0166785B1 KR0166785B1 (en) 1999-02-01

Family

ID=19308173

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900021460A KR0166785B1 (en) 1990-12-22 1990-12-22 Method for forming titanium silicide of semiconductor device

Country Status (1)

Country Link
KR (1) KR0166785B1 (en)

Also Published As

Publication number Publication date
KR0166785B1 (en) 1999-02-01

Similar Documents

Publication Publication Date Title
KR920013627A (en) Titanium Silicide Formation Method of Semiconductor Device
KR970018720A (en) Method of manufacturing thin film transistor
KR940016887A (en) Method of forming fine gate electrode of semiconductor device
KR920013625A (en) Ion Implantation Method of Semiconductor Device
KR920015592A (en) LDD structure transistor manufacturing method
KR970052785A (en) Semiconductor device manufacturing method
KR950004548A (en) Semiconductor device manufacturing method
KR910019255A (en) Formation method of L.D.D using polyslow profile
KR940022717A (en) Gate electrode formation method
KR910005441A (en) Buried contact formation method using silicide
KR960026263A (en) Metal layer formation method of semiconductor device
KR950009980A (en) Source / Drain region formation method of semiconductor device
KR950004583A (en) Thin Film Transistor Manufacturing Method
KR970003479A (en) Ambush contact forming method of semiconductor device
KR920015433A (en) MOS transistor process method
KR960035875A (en) Gate electrode formation method of semiconductor device
KR950004588A (en) MOS transistor gate electrode manufacturing method
KR910017634A (en) Memory Cell Capacitor Manufacturing Method
KR920016611A (en) Metal silicide protective layer manufacturing method
KR910013508A (en) Method of forming connection area using tungsten silicide
KR950021113A (en) Gate electrode formation method of semiconductor device
KR920015572A (en) Manufacturing Method of Semiconductor Device
KR920015471A (en) Metal contact formation method of semiconductor device
KR970023867A (en) Gate electrode formation method of semiconductor device
KR910017684A (en) Memory Cell Capacitor Manufacturing Method

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080820

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee