KR890008954A - Polycrystalline Oxide Removal Method Using Phase Inversion - Google Patents

Polycrystalline Oxide Removal Method Using Phase Inversion Download PDF

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Publication number
KR890008954A
KR890008954A KR870013099A KR870013099A KR890008954A KR 890008954 A KR890008954 A KR 890008954A KR 870013099 A KR870013099 A KR 870013099A KR 870013099 A KR870013099 A KR 870013099A KR 890008954 A KR890008954 A KR 890008954A
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KR
South Korea
Prior art keywords
oxide film
polycrystalline oxide
phase inversion
polycrystalline
removal method
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Application number
KR870013099A
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Korean (ko)
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KR940010322B1 (en
Inventor
김오현
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구자두
금성반도체 주식회사
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Priority to KR1019870013099A priority Critical patent/KR940010322B1/en
Publication of KR890008954A publication Critical patent/KR890008954A/en
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Publication of KR940010322B1 publication Critical patent/KR940010322B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

내용 없음No content

Description

상 반전을 이용한 다결정 산화막 제거방법Polycrystalline Oxide Removal Method Using Phase Inversion

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제6도∼제10도는 본 발명에 따른 상 반전을 이용한 다결정 산화막 제거 공정도.6 to 10 are polycrystalline oxide removal process diagrams using phase inversion according to the present invention.

Claims (1)

완충 산화막(1)을 포함하는 다결정 산화막 제거 공정에 있어서, 완충 산화막(1)의 상측에 질화막(3)과 다결정 실리콘(7)을 순차적층하고, 다결정 실리콘(7)의 상측에는 포토레지스터층(5)을 형성시켜 이에 다결정 산화막(8)을 입힌후, 포토레지스터층(5')을 입혀 상반전시키고, 상기 다결정 산화막(8)을 에칭시켜 포토레지스터층(5')을 제거시킨후 분리영역을 산화하는 공정을 갖는 것을 특징으로 하는 상반전을 이용한 다결정 산화막 제거방법.In the polycrystalline oxide film removal process including the buffer oxide film 1, the nitride film 3 and the polycrystalline silicon 7 are sequentially layered on the buffer oxide film 1, and the photoresist layer (above the polycrystalline silicon 7) 5) After forming the polycrystalline oxide film 8, the photoresist layer 5 'is applied to reverse the phase. The polycrystalline oxide film 8 is etched to remove the photoresist layer 5', and then the isolation region. A method of removing a polycrystalline oxide film using phase inversion, characterized in that it has a step of oxidizing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870013099A 1987-11-20 1987-11-20 Polysilicon oxidation layer removing method using image reversal KR940010322B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870013099A KR940010322B1 (en) 1987-11-20 1987-11-20 Polysilicon oxidation layer removing method using image reversal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870013099A KR940010322B1 (en) 1987-11-20 1987-11-20 Polysilicon oxidation layer removing method using image reversal

Publications (2)

Publication Number Publication Date
KR890008954A true KR890008954A (en) 1989-07-13
KR940010322B1 KR940010322B1 (en) 1994-10-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870013099A KR940010322B1 (en) 1987-11-20 1987-11-20 Polysilicon oxidation layer removing method using image reversal

Country Status (1)

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KR (1) KR940010322B1 (en)

Also Published As

Publication number Publication date
KR940010322B1 (en) 1994-10-22

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