KR960019660A - Oxidation method when forming field oxide film - Google Patents

Oxidation method when forming field oxide film Download PDF

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Publication number
KR960019660A
KR960019660A KR1019940031595A KR19940031595A KR960019660A KR 960019660 A KR960019660 A KR 960019660A KR 1019940031595 A KR1019940031595 A KR 1019940031595A KR 19940031595 A KR19940031595 A KR 19940031595A KR 960019660 A KR960019660 A KR 960019660A
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KR
South Korea
Prior art keywords
oxide film
field oxide
stabilization step
oxidation method
field
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KR1019940031595A
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Korean (ko)
Inventor
엄금용
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김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940031595A priority Critical patent/KR960019660A/en
Publication of KR960019660A publication Critical patent/KR960019660A/en

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Abstract

본 발명은 웨이퍼를 공정튜브에 장착 한다음 N2및 LO2가스를 사용하여 온도상승 및 안정화 단계를 거친 후 건식 및 습식산화를 실시하여 소자간의 격리를 목적으로 하는 필드산화막을 형성하는 산화 방법에 있어서, 상기 온도상승 및 안정화 단계에 DCE(Dichloroethglene)를 첨가하여 Cl을 생성시킴으로써 자연산화막 및 불순물이 제거된 순수한 산화막으로 필드산화막을 형성하는 것을 특징으로 하는 필드산화막 형성시의 산화 방법에 관한 것으로, 자연산화막내의 불완전한 본류의 제거와 이미 형성된 자연산화막을 제거시킴으로 인해 거의 완전한 형태의 SiO2가 형성되게 한다음, 그후 공정을 진행하여 필드산화막 성장시 그 두께와 버즈비크를 최소화 하여 256M급 이상의 DRAM 소자에서 더욱 요구되는 활성영역(Active area)를 확보하는 효과를 가져온다.The present invention relates to an oxidation method of forming a field oxide film for isolation between devices by mounting a wafer in a process tube and then performing a temperature rising and stabilization step using N 2 and LO 2 gas, followed by dry and wet oxidation. In the field rise and stabilization step of the field oxide film is formed by adding a DCE (Dichloroethglene) in the temperature rise and stabilization step to form Cl by forming a field oxide film with a natural oxide film and a pure oxide film from which impurities are removed, By removing the incomplete mainstream in the natural oxide film and removing the already formed natural oxide film, almost complete form of SiO 2 is formed. After that, the process is progressed to minimize the thickness and buzz beak when growing the field oxide film. This has the effect of securing an active area, which is more demanded by.

Description

필드산화막 형성시의 산화 방법Oxidation method when forming field oxide film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (2)

웨이퍼를 공정튜브에 장착 한다음 N2및 LO2가스를 사용하여 온도상승 및 안정화 단계를 거친 후 건식 및 습식산화를 실시하여 소자간의 격리를 목적으로 하는 필드산화막을 형성하는 산화 방법에 있어서, 상기 온도상승 및 안정화 단계에 DCE(Dichloroethglene)를 첨가하여 Cl을 생성시킴으로써 자연산화막 및 불순물이 제거된 순수한 산화막으로 필드산화막을 형성하는 것을 특징으로 하는 필드산화막 형성시의 산화 방법.In the oxidation method of mounting a wafer in a process tube, and then subjected to a temperature rise and stabilization step using N 2 and LO 2 gas and to dry and wet oxidation to form a field oxide film for isolation between devices. A method of oxidation in forming a field oxide film, wherein a field oxide film is formed of a natural oxide film and a pure oxide film from which impurities are removed by adding Cl to dichloroethglene (DCE) at a temperature rise and stabilization step. 제1항에 있어서, 상기 온도상승 및 안정화 단계에서 N2, LO2, DCE를 각각 10∼20 SLPM, 0.47 SLPM, 1 SLPM 사용하는 것을 특징으로 하는 필드산화막 형성시의 산화 방법.The method of claim 1, wherein in the temperature rising and stabilizing step, N 2 , LO 2 , and DCE are used at 10 to 20 SLPM, 0.47 SLPM, and 1 SLPM, respectively. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940031595A 1994-11-28 1994-11-28 Oxidation method when forming field oxide film KR960019660A (en)

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KR1019940031595A KR960019660A (en) 1994-11-28 1994-11-28 Oxidation method when forming field oxide film

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KR1019940031595A KR960019660A (en) 1994-11-28 1994-11-28 Oxidation method when forming field oxide film

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KR960019660A true KR960019660A (en) 1996-06-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100233293B1 (en) * 1996-11-26 1999-12-01 김영환 A method for forming field oxide layer in semiconductor device
KR100671629B1 (en) * 2004-03-17 2007-01-18 주식회사 하이닉스반도체 Method of forming a oxide film in a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100233293B1 (en) * 1996-11-26 1999-12-01 김영환 A method for forming field oxide layer in semiconductor device
KR100671629B1 (en) * 2004-03-17 2007-01-18 주식회사 하이닉스반도체 Method of forming a oxide film in a semiconductor device

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