KR960019660A - Oxidation method when forming field oxide film - Google Patents
Oxidation method when forming field oxide film Download PDFInfo
- Publication number
- KR960019660A KR960019660A KR1019940031595A KR19940031595A KR960019660A KR 960019660 A KR960019660 A KR 960019660A KR 1019940031595 A KR1019940031595 A KR 1019940031595A KR 19940031595 A KR19940031595 A KR 19940031595A KR 960019660 A KR960019660 A KR 960019660A
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- KR
- South Korea
- Prior art keywords
- oxide film
- field oxide
- stabilization step
- oxidation method
- field
- Prior art date
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- Formation Of Insulating Films (AREA)
Abstract
본 발명은 웨이퍼를 공정튜브에 장착 한다음 N2및 LO2가스를 사용하여 온도상승 및 안정화 단계를 거친 후 건식 및 습식산화를 실시하여 소자간의 격리를 목적으로 하는 필드산화막을 형성하는 산화 방법에 있어서, 상기 온도상승 및 안정화 단계에 DCE(Dichloroethglene)를 첨가하여 Cl을 생성시킴으로써 자연산화막 및 불순물이 제거된 순수한 산화막으로 필드산화막을 형성하는 것을 특징으로 하는 필드산화막 형성시의 산화 방법에 관한 것으로, 자연산화막내의 불완전한 본류의 제거와 이미 형성된 자연산화막을 제거시킴으로 인해 거의 완전한 형태의 SiO2가 형성되게 한다음, 그후 공정을 진행하여 필드산화막 성장시 그 두께와 버즈비크를 최소화 하여 256M급 이상의 DRAM 소자에서 더욱 요구되는 활성영역(Active area)를 확보하는 효과를 가져온다.The present invention relates to an oxidation method of forming a field oxide film for isolation between devices by mounting a wafer in a process tube and then performing a temperature rising and stabilization step using N 2 and LO 2 gas, followed by dry and wet oxidation. In the field rise and stabilization step of the field oxide film is formed by adding a DCE (Dichloroethglene) in the temperature rise and stabilization step to form Cl by forming a field oxide film with a natural oxide film and a pure oxide film from which impurities are removed, By removing the incomplete mainstream in the natural oxide film and removing the already formed natural oxide film, almost complete form of SiO 2 is formed. After that, the process is progressed to minimize the thickness and buzz beak when growing the field oxide film. This has the effect of securing an active area, which is more demanded by.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940031595A KR960019660A (en) | 1994-11-28 | 1994-11-28 | Oxidation method when forming field oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940031595A KR960019660A (en) | 1994-11-28 | 1994-11-28 | Oxidation method when forming field oxide film |
Publications (1)
Publication Number | Publication Date |
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KR960019660A true KR960019660A (en) | 1996-06-17 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019940031595A KR960019660A (en) | 1994-11-28 | 1994-11-28 | Oxidation method when forming field oxide film |
Country Status (1)
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KR (1) | KR960019660A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100233293B1 (en) * | 1996-11-26 | 1999-12-01 | 김영환 | A method for forming field oxide layer in semiconductor device |
KR100671629B1 (en) * | 2004-03-17 | 2007-01-18 | 주식회사 하이닉스반도체 | Method of forming a oxide film in a semiconductor device |
-
1994
- 1994-11-28 KR KR1019940031595A patent/KR960019660A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100233293B1 (en) * | 1996-11-26 | 1999-12-01 | 김영환 | A method for forming field oxide layer in semiconductor device |
KR100671629B1 (en) * | 2004-03-17 | 2007-01-18 | 주식회사 하이닉스반도체 | Method of forming a oxide film in a semiconductor device |
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WITN | Withdrawal due to no request for examination |