KR890006126A - Nf₃/o₂가스 혼합물을 사용한 디스미어 및 부식 - Google Patents

Nf₃/o₂가스 혼합물을 사용한 디스미어 및 부식 Download PDF

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Publication number
KR890006126A
KR890006126A KR1019880012349A KR880012349A KR890006126A KR 890006126 A KR890006126 A KR 890006126A KR 1019880012349 A KR1019880012349 A KR 1019880012349A KR 880012349 A KR880012349 A KR 880012349A KR 890006126 A KR890006126 A KR 890006126A
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KR
South Korea
Prior art keywords
plasma
desmear
gas mixture
corrosion
gas mixtures
Prior art date
Application number
KR1019880012349A
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English (en)
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KR910000801B1 (ko
Inventor
안토니 바커닉 존
마리 레이놀드 도나
Original Assignee
윌리암 에프.마아쉬
에어 프로덕츠 앤드 캐미칼스, 인코오포레이티드
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Publication date
Application filed by 윌리암 에프.마아쉬, 에어 프로덕츠 앤드 캐미칼스, 인코오포레이티드 filed Critical 윌리암 에프.마아쉬
Publication of KR890006126A publication Critical patent/KR890006126A/ko
Application granted granted Critical
Publication of KR910000801B1 publication Critical patent/KR910000801B1/ko

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Treating Waste Gases (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

NF3/O2가스 혼합물을 사용한 디스미어 및 부식
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
본 도면은 O2중의 CF4와 비교한 O2중의 NF3플라즈마의 상대적인 부식 비율을 나타낸 그래프이다.

Claims (8)

  1. 디스미어될(desmeared)물질이 에폭시 및 폴리이미드로 구성된 기로부터 선택되었으며, 배기 챔버내의 한쌍의 전극 사이에서 생성된 플라즈마 가스 디스미어링(desmearing) 매체를 사용하여 프린트 회로판을 디스미어하는 방법에 있어서, 20-50% NF3, 잔여량 O2의 가스 혼합물로 구성된 플라즈마로 디스미어를 개선한 방법
  2. 제1항에 있어서, 상기 챔버가 1000 내지 3000밀리-torr 범위의 압력으로 배기됨을 특징으로 하는 방법.
  3. 제1항에 있어서, 플라즈마를 생성하는데 사용되는 출력밀도가 0.08 내지 0.25watt/cm2범위임을 특징으로 하는 방법.
  4. 제1항에 있어서, 디스미어되는 물질이 에폭시 임을 특징으로 하는 방법.
  5. 제1항에 있어서, 플라즈마의 온도가 80 내지 140℃임을 특징으로 하는 방법.
  6. 제1항에 있어서, 플라즈마의 온도가 약 100℃임을 특징으로 하는 방법.
  7. 제1항에 있어서, 가스 혼합물이 25 내지 40%의 NF3와 잔여량의 O2로 이루어짐을 특징으로 하는 방법.
  8. 제1항에 있어서, 가스 혼합물이 거의 35% NF3와 65% O2로 이루어짐을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880012349A 1987-09-25 1988-09-23 Nf_3/o_2 가스 혼합물을 사용한 디스미어 및 부식 KR910000801B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/101,222 US4787957A (en) 1987-09-25 1987-09-25 Desmear and etchback using NF3 /O2 gas mixtures
US101222 1987-09-25

Publications (2)

Publication Number Publication Date
KR890006126A true KR890006126A (ko) 1989-05-18
KR910000801B1 KR910000801B1 (ko) 1991-02-08

Family

ID=22283575

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880012349A KR910000801B1 (ko) 1987-09-25 1988-09-23 Nf_3/o_2 가스 혼합물을 사용한 디스미어 및 부식

Country Status (7)

Country Link
US (1) US4787957A (ko)
EP (1) EP0308854A1 (ko)
JP (1) JPH01123083A (ko)
KR (1) KR910000801B1 (ko)
BR (1) BR8804852A (ko)
CA (1) CA1336273C (ko)
ZA (1) ZA887144B (ko)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
US4998979A (en) * 1988-06-06 1991-03-12 Canon Kabushiki Kaisha Method for washing deposition film-forming device
US5228950A (en) * 1990-12-04 1993-07-20 Applied Materials, Inc. Dry process for removal of undesirable oxide and/or silicon residues from semiconductor wafer after processing
JPH0783999B2 (ja) * 1992-04-07 1995-09-13 栄電子工業株式会社 基板材料の小径穴加工方法
US5861065A (en) * 1997-01-21 1999-01-19 Air Products And Chemicals, Inc. Nitrogen trifluoride-oxygen thermal cleaning process
US5868852A (en) * 1997-02-18 1999-02-09 Air Products And Chemicals, Inc. Partial clean fluorine thermal cleaning process
US6141870A (en) 1997-08-04 2000-11-07 Peter K. Trzyna Method for making electrical device
US6334942B1 (en) * 1999-02-09 2002-01-01 Tessera, Inc. Selective removal of dielectric materials and plating process using same
JP4409134B2 (ja) * 2001-10-09 2010-02-03 パナソニック株式会社 実装システム
US7479191B1 (en) 2005-04-22 2009-01-20 Novellus Systems, Inc. Method for endpointing CVD chamber cleans following ultra low-k film treatments
WO2006114130A1 (en) * 2005-04-26 2006-11-02 Agilent Technologies, Inc. Enzymes with modified amino acids
US8262800B1 (en) 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30505A (en) * 1860-10-23 Fukntture-caster
USRE30505E (en) 1972-05-12 1981-02-03 Lfe Corporation Process and material for manufacturing semiconductor devices
US3930913A (en) * 1974-07-18 1976-01-06 Lfe Corporation Process for manufacturing integrated circuits and metallic mesh screens
US4328081A (en) * 1980-02-25 1982-05-04 Micro-Plate, Inc. Plasma desmearing apparatus and method
US4310380A (en) * 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
NL8004005A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4425210A (en) * 1980-11-04 1984-01-10 Fazlin Fazal A Plasma desmearing apparatus and method
CA1169022A (en) * 1982-04-19 1984-06-12 Kevin Duncan Integrated circuit planarizing process
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
US4470871A (en) * 1983-12-27 1984-09-11 Rca Corporation Preparation of organic layers for oxygen etching
US4496420A (en) * 1984-04-06 1985-01-29 Bmc Industries, Inc. Process for plasma desmear etching of printed circuit boards and apparatus used therein
US4522681A (en) * 1984-04-23 1985-06-11 General Electric Company Method for tapered dry etching
US4568410A (en) * 1984-12-20 1986-02-04 Motorola, Inc. Selective plasma etching of silicon nitride in the presence of silicon oxide
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US4692205A (en) * 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US4654115A (en) * 1986-04-08 1987-03-31 International Business Machines Corporation Process for removing contaminant

Also Published As

Publication number Publication date
KR910000801B1 (ko) 1991-02-08
JPH01123083A (ja) 1989-05-16
BR8804852A (pt) 1989-04-25
ZA887144B (en) 1990-05-30
CA1336273C (en) 1995-07-11
EP0308854A1 (en) 1989-03-29
US4787957A (en) 1988-11-29

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