JPS54109391A - Etching method - Google Patents

Etching method

Info

Publication number
JPS54109391A
JPS54109391A JP758378A JP758378A JPS54109391A JP S54109391 A JPS54109391 A JP S54109391A JP 758378 A JP758378 A JP 758378A JP 758378 A JP758378 A JP 758378A JP S54109391 A JPS54109391 A JP S54109391A
Authority
JP
Japan
Prior art keywords
etching
plasma
unit
gas
test piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP758378A
Other languages
Japanese (ja)
Inventor
Eiji Togawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP758378A priority Critical patent/JPS54109391A/en
Publication of JPS54109391A publication Critical patent/JPS54109391A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PURPOSE:To simplify the work and to make safe the work, by adding nitrogen to the mixture of halogen substitution including fluorine and etching crystal with plasma processing, with the opposing electrode type plasma dry etching unit. CONSTITUTION:In the opposing electrode type plasma dry etching unit, etching gas of 10<-2> Torr. to several Torr. is introduced to the etching chamber, high frequency power is applied between two electrodes placed parallelly in the etching chamber, processing plasma for the etching gas, and the test piece on the electrode plate is etched with this gas plasma. Since the electrodes are located parallelly in this unit, efficient etching can be made because almost vertical power is exerted on the test piece.
JP758378A 1978-01-26 1978-01-26 Etching method Pending JPS54109391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP758378A JPS54109391A (en) 1978-01-26 1978-01-26 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP758378A JPS54109391A (en) 1978-01-26 1978-01-26 Etching method

Publications (1)

Publication Number Publication Date
JPS54109391A true JPS54109391A (en) 1979-08-27

Family

ID=11669822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP758378A Pending JPS54109391A (en) 1978-01-26 1978-01-26 Etching method

Country Status (1)

Country Link
JP (1) JPS54109391A (en)

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