KR890004497B1 - 다중 셀의 감광성 비정질 합금 및 소자 - Google Patents

다중 셀의 감광성 비정질 합금 및 소자 Download PDF

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KR890004497B1
KR890004497B1 KR1019810003330A KR810003330A KR890004497B1 KR 890004497 B1 KR890004497 B1 KR 890004497B1 KR 1019810003330 A KR1019810003330 A KR 1019810003330A KR 810003330 A KR810003330 A KR 810003330A KR 890004497 B1 KR890004497 B1 KR 890004497B1
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Prior art keywords
alloy
cell
cells
amorphous
fluorine
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Korean (ko)
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KR830008402A (ko
Inventor
오브신스키 스탠포드
아들러 데이비드
Original Assignee
에너지 컨버션 디바이시즈, 인코포레이티드
오브신스키 스탠포드
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Priority claimed from US06/185,520 external-priority patent/US4342044A/en
Application filed by 에너지 컨버션 디바이시즈, 인코포레이티드, 오브신스키 스탠포드 filed Critical 에너지 컨버션 디바이시즈, 인코포레이티드
Publication of KR830008402A publication Critical patent/KR830008402A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Element Separation (AREA)
KR1019810003330A 1980-09-09 1981-09-07 다중 셀의 감광성 비정질 합금 및 소자 Expired KR890004497B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US06/185,520 US4342044A (en) 1978-03-08 1980-09-09 Method for optimizing photoresponsive amorphous alloys and devices
US185520 1980-09-09
US20658080A 1980-11-13 1980-11-13
US206580 1980-11-13

Publications (2)

Publication Number Publication Date
KR830008402A KR830008402A (ko) 1983-11-18
KR890004497B1 true KR890004497B1 (ko) 1989-11-06

Family

ID=26881212

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810003330A Expired KR890004497B1 (ko) 1980-09-09 1981-09-07 다중 셀의 감광성 비정질 합금 및 소자

Country Status (14)

Country Link
KR (1) KR890004497B1 (enExample)
AU (1) AU547646B2 (enExample)
BR (1) BR8105748A (enExample)
CA (1) CA1172742A (enExample)
DE (1) DE3135353A1 (enExample)
ES (1) ES505270A0 (enExample)
FR (1) FR2490013B1 (enExample)
GB (1) GB2083705B (enExample)
IE (1) IE52209B1 (enExample)
IL (1) IL63756A0 (enExample)
IN (1) IN157288B (enExample)
IT (1) IT1138583B (enExample)
NL (1) NL8104138A (enExample)
SE (1) SE451353B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139478A (ja) * 1982-02-15 1983-08-18 Agency Of Ind Science & Technol アモルフアス太陽電池
DE3308269A1 (de) * 1983-03-09 1984-09-13 Licentia Patent-Verwaltungs-Gmbh Solarzelle
EP0122047B1 (en) * 1983-03-11 1988-06-01 Exxon Research And Engineering Company A multi-layered amorphous semiconductor material
US4598164A (en) * 1983-10-06 1986-07-01 Exxon Research And Engineering Co. Solar cell made from amorphous superlattice material
JPS6177375A (ja) * 1984-09-21 1986-04-19 Sharp Corp カラ−センサ
US4638111A (en) * 1985-06-04 1987-01-20 Atlantic Richfield Company Thin film solar cell module
US4713493A (en) * 1985-10-11 1987-12-15 Energy Conversion Devices, Inc. Power generating optical filter
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
JPS62136885A (ja) * 1985-12-11 1987-06-19 Canon Inc 光起電力素子、その製造方法及びその製造装置
JPH0647730B2 (ja) * 1985-12-25 1994-06-22 キヤノン株式会社 堆積膜形成法
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
JPH0651908B2 (ja) * 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
EP0248953A1 (en) * 1986-06-10 1987-12-16 The Standard Oil Company Tandem photovoltaic devices
DD292519A5 (de) * 1990-03-13 1991-08-01 �������@������������@��k�� Transparentes fotoelektrisches element
NL1000264C2 (nl) * 1995-05-01 1996-11-04 Frans Willem Saris Zonnecel met meerlaagsstructuur van dunne films silicium.
GB0519599D0 (en) * 2005-09-26 2005-11-02 Imp College Innovations Ltd Photovoltaic cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
JPS5513938A (en) 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method
KR890000479B1 (ko) * 1980-09-09 1989-03-18 에너지 컨버션 디바이시즈, 인코포레이리드 광응답 비정질 합금 제조방법 및 그 합금과 그로부터 만든 디바이스

Also Published As

Publication number Publication date
FR2490013B1 (fr) 1985-11-08
AU7501881A (en) 1982-03-18
ES8302365A1 (es) 1982-12-16
IT1138583B (it) 1986-09-17
GB2083705B (en) 1985-07-03
CA1172742A (en) 1984-08-14
DE3135353A1 (de) 1982-07-08
IN157288B (enExample) 1986-02-22
KR830008402A (ko) 1983-11-18
NL8104138A (nl) 1982-04-01
GB2083705A (en) 1982-03-24
SE8105279L (sv) 1982-03-10
AU547646B2 (en) 1985-10-31
BR8105748A (pt) 1982-05-25
IT8123829A0 (it) 1981-09-07
SE451353B (sv) 1987-09-28
IE52209B1 (en) 1987-08-05
IE812065L (en) 1982-03-09
ES505270A0 (es) 1982-12-16
FR2490013A1 (fr) 1982-03-12
IL63756A0 (en) 1981-12-31

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