KR890004420B1 - 반도체 바이 씨 모오스장치의 제조방법 - Google Patents

반도체 바이 씨 모오스장치의 제조방법 Download PDF

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KR890004420B1
KR890004420B1 KR1019860009286A KR860009286A KR890004420B1 KR 890004420 B1 KR890004420 B1 KR 890004420B1 KR 1019860009286 A KR1019860009286 A KR 1019860009286A KR 860009286 A KR860009286 A KR 860009286A KR 890004420 B1 KR890004420 B1 KR 890004420B1
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South Korea
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region
mask
layer
substrate
forming
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KR1019860009286A
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English (en)
Korean (ko)
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KR880006792A (ko
Inventor
최석기
민성기
강창원
Original Assignee
삼성반도체통신 주식회사
강진구
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Priority to KR1019860009286A priority Critical patent/KR890004420B1/ko
Priority to US07/106,582 priority patent/US4826783A/en
Priority to DE19873736369 priority patent/DE3736369A1/de
Priority to GB8725477A priority patent/GB2197127B/en
Priority to FR878715204A priority patent/FR2606212B1/fr
Priority to JP62277543A priority patent/JP2633873B2/ja
Publication of KR880006792A publication Critical patent/KR880006792A/ko
Application granted granted Critical
Publication of KR890004420B1 publication Critical patent/KR890004420B1/ko
Priority to HK280/91A priority patent/HK28091A/xx
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10P30/20—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/009—Bi-MOS

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019860009286A 1986-11-04 1986-11-04 반도체 바이 씨 모오스장치의 제조방법 Expired KR890004420B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019860009286A KR890004420B1 (ko) 1986-11-04 1986-11-04 반도체 바이 씨 모오스장치의 제조방법
US07/106,582 US4826783A (en) 1986-11-04 1987-10-08 Method for fabricating a BiCMOS device
DE19873736369 DE3736369A1 (de) 1986-11-04 1987-10-27 Verfahren zur herstellung eines bicmos-bauelements
GB8725477A GB2197127B (en) 1986-11-04 1987-10-30 A method for fabricating a bicmos device
FR878715204A FR2606212B1 (fr) 1986-11-04 1987-11-03 Procede de fabrication d'un composant bicmos
JP62277543A JP2633873B2 (ja) 1986-11-04 1987-11-04 半導体ＢｉＣＭＯＳ装置の製造方法
HK280/91A HK28091A (en) 1986-11-04 1991-04-11 A method for fabricating a bicmos device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009286A KR890004420B1 (ko) 1986-11-04 1986-11-04 반도체 바이 씨 모오스장치의 제조방법

Publications (2)

Publication Number Publication Date
KR880006792A KR880006792A (ko) 1988-07-25
KR890004420B1 true KR890004420B1 (ko) 1989-11-03

Family

ID=19253178

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009286A Expired KR890004420B1 (ko) 1986-11-04 1986-11-04 반도체 바이 씨 모오스장치의 제조방법

Country Status (7)

Country Link
US (1) US4826783A (cg-RX-API-DMAC10.html)
JP (1) JP2633873B2 (cg-RX-API-DMAC10.html)
KR (1) KR890004420B1 (cg-RX-API-DMAC10.html)
DE (1) DE3736369A1 (cg-RX-API-DMAC10.html)
FR (1) FR2606212B1 (cg-RX-API-DMAC10.html)
GB (1) GB2197127B (cg-RX-API-DMAC10.html)
HK (1) HK28091A (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930008899B1 (ko) * 1987-12-31 1993-09-16 금성일렉트론 주식회사 트랜칭(trenching)에 의한 바이-씨모스(Bi-CMOS)제조방법
US5091760A (en) * 1989-04-14 1992-02-25 Kabushiki Kaisha Toshiba Semiconductor device
US5112761A (en) * 1990-01-10 1992-05-12 Microunity Systems Engineering Bicmos process utilizing planarization technique
US5420061A (en) * 1993-08-13 1995-05-30 Micron Semiconductor, Inc. Method for improving latchup immunity in a dual-polysilicon gate process
JPH088268A (ja) * 1994-06-21 1996-01-12 Mitsubishi Electric Corp バイポーラトランジスタを有する半導体装置およびその製造方法
JPH08148583A (ja) * 1994-11-24 1996-06-07 Mitsubishi Electric Corp バイポーラトランジスタを有する半導体記憶装置
EP0782968B1 (de) * 1995-12-18 2001-10-17 Heidelberger Druckmaschinen Aktiengesellschaft Verfahren und Vorrichtungen zum Halten von Substraten auf einem Transportband einer Druckmaschine
US5879954A (en) * 1996-05-20 1999-03-09 Raytheon Company Radiation-hard isoplanar cryo-CMOS process suitable for sub-micron devices
DE102018109242B4 (de) * 2018-04-18 2019-11-14 Infineon Technologies Dresden Gmbh Verfahren zum herstellen eines dotierten vergrabenen gebiets und eines dotierten kontaktgebiets in einem halbleiterkörper

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
DE2219969C3 (de) * 1972-04-24 1978-09-07 Roth Electric Gmbh, 8035 Gauting Vorrichtung zum selbsttätigen Zuführen von Längsdrähten in Gitter-Schweißmaschinen
JPS5633864B2 (cg-RX-API-DMAC10.html) * 1972-12-06 1981-08-06
US3898107A (en) * 1973-12-03 1975-08-05 Rca Corp Method of making a junction-isolated semiconductor integrated circuit device
US4045250A (en) * 1975-08-04 1977-08-30 Rca Corporation Method of making a semiconductor device
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
US4325180A (en) * 1979-02-15 1982-04-20 Texas Instruments Incorporated Process for monolithic integration of logic, control, and high voltage interface circuitry
JPS56169359A (en) * 1980-05-30 1981-12-26 Ricoh Co Ltd Semiconductor integrated circuit device
DE3272436D1 (en) * 1982-05-06 1986-09-11 Itt Ind Gmbh Deutsche Method of making a monolithic integrated circuit with at least one isolated gate field effect transistor and one bipolar transistor
JPS58216455A (ja) * 1982-06-09 1983-12-16 Toshiba Corp 半導体装置の製造方法
JPS59117150A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 半導体集積回路装置とその製造法
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
JPS60171757A (ja) * 1984-02-17 1985-09-05 Hitachi Ltd 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
JP2633873B2 (ja) 1997-07-23
DE3736369C2 (cg-RX-API-DMAC10.html) 1991-09-05
GB8725477D0 (en) 1987-12-02
HK28091A (en) 1991-04-19
GB2197127B (en) 1990-07-04
FR2606212A1 (fr) 1988-05-06
FR2606212B1 (fr) 1990-08-31
US4826783A (en) 1989-05-02
DE3736369A1 (de) 1988-05-11
JPS63278265A (ja) 1988-11-15
GB2197127A (en) 1988-05-11
KR880006792A (ko) 1988-07-25

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