FR2606212B1 - Procede de fabrication d'un composant bicmos - Google Patents

Procede de fabrication d'un composant bicmos

Info

Publication number
FR2606212B1
FR2606212B1 FR878715204A FR8715204A FR2606212B1 FR 2606212 B1 FR2606212 B1 FR 2606212B1 FR 878715204 A FR878715204 A FR 878715204A FR 8715204 A FR8715204 A FR 8715204A FR 2606212 B1 FR2606212 B1 FR 2606212B1
Authority
FR
France
Prior art keywords
manufacturing
bicmos
component
bicmos component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR878715204A
Other languages
English (en)
Other versions
FR2606212A1 (fr
Inventor
Suk-Gi Choi
Sung-Ki Min
Chang-Won Kahng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor and Telecomunications Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of FR2606212A1 publication Critical patent/FR2606212A1/fr
Application granted granted Critical
Publication of FR2606212B1 publication Critical patent/FR2606212B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/009—Bi-MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Integrated Circuits (AREA)
FR878715204A 1986-11-04 1987-11-03 Procede de fabrication d'un composant bicmos Expired - Lifetime FR2606212B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009286A KR890004420B1 (ko) 1986-11-04 1986-11-04 반도체 바이 씨 모오스장치의 제조방법

Publications (2)

Publication Number Publication Date
FR2606212A1 FR2606212A1 (fr) 1988-05-06
FR2606212B1 true FR2606212B1 (fr) 1990-08-31

Family

ID=19253178

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878715204A Expired - Lifetime FR2606212B1 (fr) 1986-11-04 1987-11-03 Procede de fabrication d'un composant bicmos

Country Status (7)

Country Link
US (1) US4826783A (fr)
JP (1) JP2633873B2 (fr)
KR (1) KR890004420B1 (fr)
DE (1) DE3736369A1 (fr)
FR (1) FR2606212B1 (fr)
GB (1) GB2197127B (fr)
HK (1) HK28091A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930008899B1 (ko) * 1987-12-31 1993-09-16 금성일렉트론 주식회사 트랜칭(trenching)에 의한 바이-씨모스(Bi-CMOS)제조방법
US5091760A (en) * 1989-04-14 1992-02-25 Kabushiki Kaisha Toshiba Semiconductor device
US5112761A (en) * 1990-01-10 1992-05-12 Microunity Systems Engineering Bicmos process utilizing planarization technique
US5420061A (en) 1993-08-13 1995-05-30 Micron Semiconductor, Inc. Method for improving latchup immunity in a dual-polysilicon gate process
JPH088268A (ja) * 1994-06-21 1996-01-12 Mitsubishi Electric Corp バイポーラトランジスタを有する半導体装置およびその製造方法
JPH08148583A (ja) * 1994-11-24 1996-06-07 Mitsubishi Electric Corp バイポーラトランジスタを有する半導体記憶装置
EP0782968B1 (fr) * 1995-12-18 2001-10-17 Heidelberger Druckmaschinen Aktiengesellschaft Méthode et appareils pour maintenir des substrats sur une bande transporteuse d'une machine d'impression
US5879954A (en) * 1996-05-20 1999-03-09 Raytheon Company Radiation-hard isoplanar cryo-CMOS process suitable for sub-micron devices
DE102018109242B4 (de) * 2018-04-18 2019-11-14 Infineon Technologies Dresden Gmbh Verfahren zum herstellen eines dotierten vergrabenen gebiets und eines dotierten kontaktgebiets in einem halbleiterkörper

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
DE2219969C3 (de) * 1972-04-24 1978-09-07 Roth Electric Gmbh, 8035 Gauting Vorrichtung zum selbsttätigen Zuführen von Längsdrähten in Gitter-Schweißmaschinen
JPS5633864B2 (fr) * 1972-12-06 1981-08-06
US3898107A (en) * 1973-12-03 1975-08-05 Rca Corp Method of making a junction-isolated semiconductor integrated circuit device
US4045250A (en) * 1975-08-04 1977-08-30 Rca Corporation Method of making a semiconductor device
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
US4325180A (en) * 1979-02-15 1982-04-20 Texas Instruments Incorporated Process for monolithic integration of logic, control, and high voltage interface circuitry
JPS56169359A (en) * 1980-05-30 1981-12-26 Ricoh Co Ltd Semiconductor integrated circuit device
DE3272436D1 (en) * 1982-05-06 1986-09-11 Itt Ind Gmbh Deutsche Method of making a monolithic integrated circuit with at least one isolated gate field effect transistor and one bipolar transistor
JPS58216455A (ja) * 1982-06-09 1983-12-16 Toshiba Corp 半導体装置の製造方法
JPS59117150A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 半導体集積回路装置とその製造法
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
JPS60171757A (ja) * 1984-02-17 1985-09-05 Hitachi Ltd 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
GB2197127A (en) 1988-05-11
DE3736369A1 (de) 1988-05-11
GB8725477D0 (en) 1987-12-02
KR880006792A (ko) 1988-07-25
KR890004420B1 (ko) 1989-11-03
HK28091A (en) 1991-04-19
GB2197127B (en) 1990-07-04
JPS63278265A (ja) 1988-11-15
FR2606212A1 (fr) 1988-05-06
DE3736369C2 (fr) 1991-09-05
JP2633873B2 (ja) 1997-07-23
US4826783A (en) 1989-05-02

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Legal Events

Date Code Title Description
TP Transmission of property