KR890004397A - Double metal formation method of integrated circuit - Google Patents

Double metal formation method of integrated circuit Download PDF

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Publication number
KR890004397A
KR890004397A KR1019870008802A KR870008802A KR890004397A KR 890004397 A KR890004397 A KR 890004397A KR 1019870008802 A KR1019870008802 A KR 1019870008802A KR 870008802 A KR870008802 A KR 870008802A KR 890004397 A KR890004397 A KR 890004397A
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KR
South Korea
Prior art keywords
insulating layer
negative photoresist
integrated circuit
formation method
double metal
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Application number
KR1019870008802A
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Korean (ko)
Inventor
이정인
Original Assignee
강진구
삼성반도체통신 주식회사
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Priority to KR1019870008802A priority Critical patent/KR890004397A/en
Publication of KR890004397A publication Critical patent/KR890004397A/en

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Abstract

내용 없음No content

Description

집적회로의 이중메탈 형성방법Double metal formation method of integrated circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 이중메탈 형성방법을 보인 공정도. 제2도는 본 발며엥 의한 이중메탈 형성방법을 보인 설명도.1 is a process chart showing a conventional double metal forming method. 2 is an explanatory diagram showing a method of forming a double metal by the present baldengeng.

Claims (4)

기판이나 P층 또는 N층에 증착 및 에팅에 의하여 형성시킨 메탈 I위에 절연층(SiO₂)을 도포하되, 그 위에 재차 저점도의 네가티브 포토레지스트를 도포하고 고속회전시킨 후, 네가티브 포토레지스트와 절연층을 프라스마 광선에 의하여 절삭시켜 줌으로써 덕이어나 트랜치가 제거된 절연층을 얻고, 그 위에 재차 절연층을 오포하여 평탄화 작업을 완료하며 메탈 I상측의 절연층을 에칭하여 그 표면에 메탈 Ⅱ를 증착시켜서 된 집적회로의 이중메탈 형성방법.An insulating layer (SiO₂) is applied on the metal I formed by vapor deposition and etching on the substrate, P layer or N layer, and the negative photoresist of low viscosity is applied on the substrate and rotated at high speed, and then the negative photoresist and the insulating layer By cutting with a plasma beam to obtain an insulating layer from which ducks and trenches have been removed, and then again insulating the insulating layer to complete the planarization work, etching the insulating layer on the upper side of the metal I, and depositing metal II on the surface thereof. Dual metal forming method of integrated integrated circuit. 제1항에 있어서, 네가티브 포토레지스트의 점도가 20CP-40CP의 범위 내에 있음을 특징으로 하는 집적회로의 이중메탈 형성방법.The method of claim 1, wherein the viscosity of the negative photoresist is in the range of 20CP-40CP. 제1항에 있어서, 네가티브 포토레지스트를 도포하여 6,000-7,000r.p.m으로 고속 회전시킴을 특징으로 하는 집적회로의 이중메탈 형성방법.The method of claim 1, wherein the negative photoresist is applied to rotate at a high speed of 6,000-7,000 r.p.m. 제1항에 있어서, 프라스마 광선에 의한 네가티브 포토레지스트와 절연층의 절삭비가 1:1.2임을 특징으로 하는 집적회로의 이중메탈 형성방법.The method of claim 1, wherein the cutting ratio of the negative photoresist and the insulating layer by the plasma light is 1: 1.2. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870008802A 1987-08-11 1987-08-11 Double metal formation method of integrated circuit KR890004397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870008802A KR890004397A (en) 1987-08-11 1987-08-11 Double metal formation method of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870008802A KR890004397A (en) 1987-08-11 1987-08-11 Double metal formation method of integrated circuit

Publications (1)

Publication Number Publication Date
KR890004397A true KR890004397A (en) 1989-04-21

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Application Number Title Priority Date Filing Date
KR1019870008802A KR890004397A (en) 1987-08-11 1987-08-11 Double metal formation method of integrated circuit

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KR (1) KR890004397A (en)

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