KR940022707A

KR940022707A - Buried gate electrode formation method

Info

Publication number: KR940022707A
Application number: KR1019930004999A
Authority: KR
Inventors: 정세훈; 강호민
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1993-03-29
Filing date: 1993-03-29
Publication date: 1994-10-21

Abstract

본 발명은 절연 기판위에 포토레지스트를 코팅하여 매립 게이트 크기의 개구부를 형성하는 단계 : 개구된 곳에 건식식각으로 절연기판의 일부를 제거하고, 이어서 습식식각에 의해 적어도 게이트 두께 이상의 깊이를 갖는 트렌치를 형성하는 단계 ; 기판 전면에 제1금속층과 제2금속층으로 상기 트렌치 내에 2중 게이트를 형성하는 단계 : 상기 포토레지스트를 제거하고 양극산화하는 단계를 포함하여 트렌치 내에 매립 게이트 전극을 형성함을 특징으로 하는 매립 게이트 전극의 형성방법에 관한 것.The present invention provides a method for forming a buried gate-sized opening by coating a photoresist on an insulated substrate. Doing; Forming a double gate in the trench with a first metal layer and a second metal layer on a front surface of the substrate, wherein the buried gate electrode is formed in the trench, including removing and anodizing the photoresist. Of methods of forming

Description

Buried gate electrode formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제3도는 본 발명의 공정 수순을 보인 공정도이다.1 to 3 are process charts showing the process procedure of the present invention.

Claims

Coating a photoresist on the insulating substrate to form an opening of the buried gate size: removing a portion of the insulating substrate by the open high-stain dry etching, and then forming a trench having a depth of at least the gate thickness by wet etching. Forming a double gate in the trench with a first metal layer and a second metal layer on a front surface of the substrate, wherein the buried gate electrode is formed in the trench, including removing and anodizing the photoresist. Method of formation.

The method of claim 1, wherein the second metal layer is Ta.

3. The method of claim 1, wherein the first metal layer is A1.

The method of claim 1, wherein the insulating substrate is one of transparent glass or SiN ₄ .

The method of claim 1, wherein the photoresist removing process is performed to simultaneously remove the metal layer on the photoresist by a lift-off method.

※ Note: The disclosure is based on the initial application.