KR930015068A - TFT manufacturing method using gate insulating film with step - Google Patents

TFT manufacturing method using gate insulating film with step Download PDF

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Publication number
KR930015068A
KR930015068A KR1019910024983A KR910024983A KR930015068A KR 930015068 A KR930015068 A KR 930015068A KR 1019910024983 A KR1019910024983 A KR 1019910024983A KR 910024983 A KR910024983 A KR 910024983A KR 930015068 A KR930015068 A KR 930015068A
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KR
South Korea
Prior art keywords
insulating film
gate insulating
tft manufacturing
portions
tft
Prior art date
Application number
KR1019910024983A
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Korean (ko)
Inventor
채기성
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019910024983A priority Critical patent/KR930015068A/en
Publication of KR930015068A publication Critical patent/KR930015068A/en

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Abstract

본 발명은 드레인 전극부분의 저항을 다른 부분에 비하여 다소 높게 하도록 드레인전극 부분의 두께를 다른 부분보다 높게 하여 게이트에 가해지는 전압에 의해 형성되는 전도대(conduction path)를 다른부분과 차이를 갖게 하므로서 저항을 증가시켜 누설전류를 감소시킬 수 있게 한 것이다.According to the present invention, the thickness of the drain electrode portion is made higher than that of the other portions so that the resistance of the drain electrode portion is slightly higher than that of the other portions, thereby making the conduction path formed by the voltage applied to the gate different from the other portions. This increases the leakage current.

Description

단차를 가진 게이트 절연막을 사용한 TFT 제조방법TFT manufacturing method using gate insulating film with step

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 다결정 TFT 제조 공정도,2 is a process chart of manufacturing a polycrystalline TFT of the present invention;

제3도는 본 발명의 다른 실시예의 TFT 제조 공정도.3 is a TFT manufacturing process diagram of another embodiment of the present invention.

Claims (3)

드레인 전극 부근에 게이트 절연막(1)을 단차지게 형성한 다음 그 위에 게이트전극(2)을 증착시킨 것을 특징으로 하는 단차를 가진 게이트 절연막을 사용한 TFT제조방법.A method for manufacturing a TFT using a stepped gate insulating film, characterized in that a step of forming a gate insulating film (1) in the vicinity of a drain electrode and then depositing a gate electrode (2) thereon. 제1항에 있어서, 상기 게이트 절연막(1)과 게이트전극(2) 사이에 산화막이나 질화막(6)을 증착시킨 것을 특징으로 하는 단차를 가진 게이트 절연막을 사용한 TFT 제조방법.The TFT manufacturing method according to claim 1, wherein an oxide film or a nitride film is deposited between the gate insulating film (1) and the gate electrode (2). 제1항에 있어서, 상기 게이트 절연막(1)과 게이트전극(2)은 경사를 갖도록 한 것을 특징으로 하는 단차를 가진 게이트 절연막을 사용한 TFT 제조방법.A method according to claim 1, wherein the gate insulating film (1) and the gate electrode (2) are inclined. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910024983A 1991-12-30 1991-12-30 TFT manufacturing method using gate insulating film with step KR930015068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910024983A KR930015068A (en) 1991-12-30 1991-12-30 TFT manufacturing method using gate insulating film with step

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024983A KR930015068A (en) 1991-12-30 1991-12-30 TFT manufacturing method using gate insulating film with step

Publications (1)

Publication Number Publication Date
KR930015068A true KR930015068A (en) 1993-07-23

Family

ID=67345930

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910024983A KR930015068A (en) 1991-12-30 1991-12-30 TFT manufacturing method using gate insulating film with step

Country Status (1)

Country Link
KR (1) KR930015068A (en)

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