KR890001277A - 차동증폭회로 - Google Patents

차동증폭회로 Download PDF

Info

Publication number
KR890001277A
KR890001277A KR1019880006677A KR880006677A KR890001277A KR 890001277 A KR890001277 A KR 890001277A KR 1019880006677 A KR1019880006677 A KR 1019880006677A KR 880006677 A KR880006677 A KR 880006677A KR 890001277 A KR890001277 A KR 890001277A
Authority
KR
South Korea
Prior art keywords
transistor
emitter
supply terminal
transistors
collector
Prior art date
Application number
KR1019880006677A
Other languages
English (en)
Other versions
KR900008754B1 (ko
Inventor
이치로 이시하라
도시오 가나이
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR890001277A publication Critical patent/KR890001277A/ko
Application granted granted Critical
Publication of KR900008754B1 publication Critical patent/KR900008754B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

내용없음

Description

자동증폭회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 차동증폭회로를 설명하기 위한 회로도
제2도 내지 3도는 각각 본 발명의 다른 실시예를 설명하기 위한 회로도

Claims (1)

  1. 각 베이스에 제1, 제2입력신호가 각기 공급되고 각 에미터가 공통으로 접속되어 있는 제1극성의 제1, 제2트랜지스터(Q1,Q2)와, 이 제1, 제2트랜지스터(Q1,Q2)공통에미터와 제1전원위공급단자간에 끼워져있는 전류원(A), 상기 제1트랜지스터(Q1)의 콜렉터에 그 콜렉터가 접속되어 있으면서 그 에미터가 제2전원전위공급단자에 접속되어 있으면서 그 에미터가 제2전원전위공급단자에 결합되어 있는 제2극성의 제3트랜지스터(Q3), 상기 제2트랜지스터(Q2)의 콜렉터에 그 콜렉터가 접속되어 있으면서 그 에미터가 상기 제2전원 전위공급단자에 결합되어 있으며 그 베이스가 상기 제3트랜지스터(Q3)의 베이스에 접속되어 있는 제2극성의 제4트랜지스터(Q4) 및, 상기 제3, 제4 트랜지스터(Q3,Q4)의 공통베이스에 일단이 결합되어 있으면서 타단이 상기 제1전원위공급단자에 결합되어 있으며 그 게이트가 상기 제1트랜지스터(Q1)와 제3트랜지스터(Q3)의 접속점에 접속되어 있는 FET(Q10)를 갖추어서 구성된 것을 특징으로 하는 차동증폭회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880006677A 1987-06-03 1988-06-03 차동증폭회로 KR900008754B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP138165 1987-06-03
JP62138165A JPS63302609A (ja) 1987-06-03 1987-06-03 差動増幅回路
JP62-138165 1987-06-03

Publications (2)

Publication Number Publication Date
KR890001277A true KR890001277A (ko) 1989-03-20
KR900008754B1 KR900008754B1 (ko) 1990-11-29

Family

ID=15215545

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880006677A KR900008754B1 (ko) 1987-06-03 1988-06-03 차동증폭회로

Country Status (3)

Country Link
US (1) US4855686A (ko)
JP (1) JPS63302609A (ko)
KR (1) KR900008754B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100502401B1 (ko) * 1997-09-03 2005-10-06 삼성전자주식회사 광학간섭계의조정용공구

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389892A (en) * 1993-11-09 1995-02-14 At&T Corp. Input stages for high voltage operational amplifier
KR101816525B1 (ko) 2010-10-01 2018-02-21 삼성전자주식회사 차동 증폭기의 레이아웃 방법 및 이를 이용한 차동 증폭기 레이아웃

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4008441A (en) * 1974-08-16 1977-02-15 Rca Corporation Current amplifier
JPS543592A (en) * 1977-06-10 1979-01-11 Hitachi Ltd Fourier transforming nuclear magnetic resonator
US4683442A (en) * 1984-10-18 1987-07-28 Motorola, Inc. Operational amplifier circuit utilizing resistors trimmed by metal migration

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100502401B1 (ko) * 1997-09-03 2005-10-06 삼성전자주식회사 광학간섭계의조정용공구

Also Published As

Publication number Publication date
US4855686A (en) 1989-08-08
KR900008754B1 (ko) 1990-11-29
JPS63302609A (ja) 1988-12-09

Similar Documents

Publication Publication Date Title
KR960027256A (ko) 증폭기
KR870009543A (ko) 차동 증폭 회로
KR890001293A (ko) 출력 회로
KR940015786A (ko) 낮은 공급 전압에서 동작가능한 아날로그 곱셈기
KR860000719A (ko) 상보형(相補型)Bi-MIS 게이트회로
KR890001274A (ko) 전류미러회로
KR880012009A (ko) BiMOS 논리회로
KR880011996A (ko) 차동증폭기
KR860009428A (ko) 셈플 및 홀드 회로 장치
KR940020692A (ko) 집적 회로 증폭 장치(integrated circuit amplifier arrangements)
KR860007777A (ko) 증폭기 장치 및 푸시풀 증폭기
KR880005744A (ko) 차동증폭회로
KR870006572A (ko) Bimos메모리 감지 증폭기
KR870001504A (ko) 전류미터회로
KR950004710A (ko) 전압-전류 변환기
KR920013863A (ko) 기준 회로 및 안정 회로를 구비한 전원 장치
KR940017113A (ko) 차동증폭회로
KR860007778A (ko) 증폭기 장치 및 푸시풀 증폭기
KR850008253A (ko) 차동 증폭기
KR890001277A (ko) 차동증폭회로
KR910021007A (ko) 증폭기
SE7905604L (sv) Krets for att begrensa spenningsskillnaden i differentialforsterkare
KR910017735A (ko) 증폭기 장치
KR900004096A (ko) 증폭회로
EP0403174A3 (en) Differential amplifying circuit operable at high speed

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20031030

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee