KR880011907A - 반도체장치에서 배선층의 형성방법 - Google Patents

반도체장치에서 배선층의 형성방법 Download PDF

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Publication number
KR880011907A
KR880011907A KR1019880003121A KR880003121A KR880011907A KR 880011907 A KR880011907 A KR 880011907A KR 1019880003121 A KR1019880003121 A KR 1019880003121A KR 880003121 A KR880003121 A KR 880003121A KR 880011907 A KR880011907 A KR 880011907A
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KR
South Korea
Prior art keywords
wiring layer
semiconductor device
film
aluminum
forming
Prior art date
Application number
KR1019880003121A
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English (en)
Inventor
마사히로 아베
도시히코 가츠라
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR880011907A publication Critical patent/KR880011907A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체장치에서 배선층의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 관한 배선층의 형성벙법을 도시해 놓은 공정도.
제2도는 본 발명의 1실시예에 관한 배선층의 형성방법으로 형성된 알루미늄막의 구조를 도시해 놓은 단면도.

Claims (4)

  1. 반도체 기판위에 알루미늄막 또는 알루미늄 합금막을 피착시켜주는 제1 공정과, 상기 피착된 알루미늄막 또는 알루미늄 합금막의 표면을 산화시키는 제2공정을 구비해서, 상기 제1 및 제2 공정을 연속해서 복수회 반복함에 의해 바라는 막두께의 배선층을 형성시킬 수 있는 것을 특징으로 하는 반도체장치에서 배선층의 형성방법.
  2. 제1항에 있어서, 상기 제2공정이 상기 제1공정에서 피착형성된 알루미늄막 또는 알루미늄 합금막을 대기중에 방치됨에 따라 행해지는 것을 특징으로 하는 반도체장치에서 배선층의 형성방법.
  3. 제1항에 있어서, 상기 제2 공정이 상기 제1공정에서 피착 형성된 알루미늄막 또는 알루미늄 합금막을 대기중에 방치된 다음 가열처리되도록 행해지는 것을 특징으로하는 반도체장치에서 배선층의 형성방법.
  4. 제1항에 있어서, 상기 제2공정이 상기 제1공정에서 피착 형성된 알루미늄막 도는 알루미늄 합금막을 깨끗한 물중에 방치됨에 따라 행해지는 것을 특징으로 하는 반도체장치에서 배선층의 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880003121A 1987-03-23 1988-03-23 반도체장치에서 배선층의 형성방법 KR880011907A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62068253A JPS6413740A (en) 1987-03-23 1987-03-23 Formation of wiring layer in semiconductor device
JP62-68253 1987-03-23

Publications (1)

Publication Number Publication Date
KR880011907A true KR880011907A (ko) 1988-10-31

Family

ID=13368407

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880003121A KR880011907A (ko) 1987-03-23 1988-03-23 반도체장치에서 배선층의 형성방법

Country Status (3)

Country Link
EP (1) EP0283953A1 (ko)
JP (1) JPS6413740A (ko)
KR (1) KR880011907A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2817590B2 (ja) * 1993-09-24 1998-10-30 信越半導体株式会社 発光素子の製造方法
JPH07231015A (ja) * 1994-02-17 1995-08-29 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5181462B2 (ja) * 2006-10-31 2013-04-10 富士ゼロックス株式会社 半導体素子及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771131A (en) * 1980-10-22 1982-05-01 Mitsubishi Electric Corp Formation of conductor for aluminum electrode
US4302498A (en) * 1980-10-28 1981-11-24 Rca Corporation Laminated conducting film on an integrated circuit substrate and method of forming the laminate

Also Published As

Publication number Publication date
EP0283953A1 (en) 1988-09-28
JPS6413740A (en) 1989-01-18

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