KR880007791A - 금속박막의 선택증착방법 - Google Patents

금속박막의 선택증착방법

Info

Publication number
KR880007791A
KR880007791A KR1019870013531A KR870013531A KR880007791A KR 880007791 A KR880007791 A KR 880007791A KR 1019870013531 A KR1019870013531 A KR 1019870013531A KR 870013531 A KR870013531 A KR 870013531A KR 880007791 A KR880007791 A KR 880007791A
Authority
KR
South Korea
Prior art keywords
thin film
deposition method
metal thin
selective deposition
selective
Prior art date
Application number
KR1019870013531A
Other languages
English (en)
Other versions
KR900006501B1 (ko
Inventor
에이스께 니시따니
스스무 쯔즈꾸
미쯔오 나까따니
마사아끼 마에하라
미쯔아끼 호리우찌
고이찌로 미즈까미
Original Assignee
가부시끼가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 히다찌세이사꾸쇼 filed Critical 가부시끼가이샤 히다찌세이사꾸쇼
Publication of KR880007791A publication Critical patent/KR880007791A/ko
Application granted granted Critical
Publication of KR900006501B1 publication Critical patent/KR900006501B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019870013531A 1986-12-01 1987-11-30 금속박막의 선택증착방법 KR900006501B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61-284302 1986-12-01
JP61284302A JPH0772351B2 (ja) 1986-12-01 1986-12-01 金属薄膜選択成長方法

Publications (2)

Publication Number Publication Date
KR880007791A true KR880007791A (ko) 1988-08-29
KR900006501B1 KR900006501B1 (ko) 1990-09-03

Family

ID=17676768

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870013531A KR900006501B1 (ko) 1986-12-01 1987-11-30 금속박막의 선택증착방법

Country Status (3)

Country Link
US (2) US4830891A (ko)
JP (1) JPH0772351B2 (ko)
KR (1) KR900006501B1 (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0212913A (ja) * 1988-06-30 1990-01-17 Nippon Telegr & Teleph Corp <Ntt> 金属または半導体の電極・配線形成方法
JP2506451B2 (ja) * 1989-08-18 1996-06-12 富士通株式会社 化学気相成長装置及び化学気相成長法
JP2721013B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JP2781223B2 (ja) * 1989-09-26 1998-07-30 キヤノン株式会社 堆積膜形成法
JPH07110991B2 (ja) * 1989-10-02 1995-11-29 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
US5077100A (en) * 1989-10-17 1991-12-31 Microelectronics And Computer Technology Corporation Method for forming electrical connections between copper conductors
ATE143703T1 (de) * 1990-06-26 1996-10-15 Air Liquide Verfahren zum herstellen selbsttragender formkörper aus feuerfestem metall
DE69116058T2 (de) * 1990-09-27 1996-08-22 At & T Corp Verfahren zur Herstellung integrierter Schaltungen
US5149596A (en) * 1990-10-05 1992-09-22 The United States Of America As Represented By The United States Department Of Energy Vapor deposition of thin films
US5173327A (en) * 1991-06-18 1992-12-22 Micron Technology, Inc. LPCVD process for depositing titanium films for semiconductor devices
US5300322A (en) * 1992-03-10 1994-04-05 Martin Marietta Energy Systems, Inc. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
WO1998023389A1 (en) * 1996-11-26 1998-06-04 Genus, Inc. Nitrogen-bearing cvd films from nf3, as a nitrogen source
JP3917237B2 (ja) * 1997-05-20 2007-05-23 東京エレクトロン株式会社 レジスト膜形成方法
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6365515B1 (en) 2000-08-28 2002-04-02 Micron Technology, Inc. Chemical vapor deposition process
US7573005B2 (en) * 2004-04-22 2009-08-11 Thermal Solutions, Inc. Boil detection method and computer program
JP2006089790A (ja) * 2004-09-22 2006-04-06 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 貴金属膜、貴金属酸化物膜、および貴金属ケイ化物膜の製造方法
US7833904B2 (en) * 2005-06-16 2010-11-16 The Trustees Of Columbia University In The City Of New York Methods for fabricating nanoscale electrodes and uses thereof
US11643721B2 (en) * 2017-09-12 2023-05-09 Applied Materials, Inc. Low temperature deposition of iridium containing films

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621812A (en) * 1969-06-18 1971-11-23 Texas Instruments Inc Epitaxial deposition reactor
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US3697343A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
US3697342A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
JPS5275177A (en) * 1975-12-18 1977-06-23 Matsushita Electric Ind Co Ltd Vapor growth device
US4181758A (en) * 1976-07-30 1980-01-01 Gulf & Western Industries, Inc. Method for preventing the deposition of a coating on a substrate
JPS5630058A (en) * 1979-08-17 1981-03-26 Kawasaki Steel Corp Preventing method for leakage of molten steel through porus brick
JPS5750423A (en) * 1980-09-12 1982-03-24 Nec Corp Vapor phase growth device
US4321073A (en) * 1980-10-15 1982-03-23 Hughes Aircraft Company Method and apparatus for forming metal coating on glass fiber
JPS5966120A (ja) * 1982-10-08 1984-04-14 Hitachi Ltd 半導体製造装置
JPS59112611A (ja) * 1982-12-17 1984-06-29 Matsushita Electric Ind Co Ltd 気相成長装置
US4540607A (en) * 1983-08-08 1985-09-10 Gould, Inc. Selective LPCVD tungsten deposition by the silicon reduction method
JPS6079713A (ja) * 1983-10-07 1985-05-07 Hitachi Ltd 気相成長装置
JPS60125371A (ja) * 1983-12-09 1985-07-04 Hitachi Ltd 真空内基板加熱装置
US4584207A (en) * 1984-09-24 1986-04-22 General Electric Company Method for nucleating and growing tungsten films
JPS61103530A (ja) * 1984-10-25 1986-05-22 Ulvac Corp 真空処理装置における基板の冷却機構
US4595608A (en) * 1984-11-09 1986-06-17 Harris Corporation Method for selective deposition of tungsten on silicon
JPS61131430A (ja) * 1984-11-29 1986-06-19 Mitsubishi Electric Corp 半導体製造装置
JPS61131417A (ja) * 1984-11-29 1986-06-19 Mitsubishi Electric Corp 半導体製造装置
US4741928A (en) * 1985-12-27 1988-05-03 General Electric Company Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces

Also Published As

Publication number Publication date
JPH0772351B2 (ja) 1995-08-02
US4830891A (en) 1989-05-16
US4979466A (en) 1990-12-25
JPS63140082A (ja) 1988-06-11
KR900006501B1 (ko) 1990-09-03

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