KR880006844A - 이중 게이트 튜너블 발진기 - Google Patents

이중 게이트 튜너블 발진기 Download PDF

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Publication number
KR880006844A
KR880006844A KR870013289A KR870013289A KR880006844A KR 880006844 A KR880006844 A KR 880006844A KR 870013289 A KR870013289 A KR 870013289A KR 870013289 A KR870013289 A KR 870013289A KR 880006844 A KR880006844 A KR 880006844A
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KR
South Korea
Prior art keywords
gate electrode
fet
reference potential
electrode
source electrode
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Application number
KR870013289A
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English (en)
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KR960003664B1 (ko
Inventor
워드 뮤터즈 포그 맥스
Original Assignee
글렌 에이취. 브르스틀
알 씨 에이 코포레이션
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Publication of KR880006844A publication Critical patent/KR880006844A/ko
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Publication of KR960003664B1 publication Critical patent/KR960003664B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J7/00—Automatic frequency control; Automatic scanning over a band of frequencies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1296—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the feedback circuit comprising a transformer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0002—Types of oscillators
    • H03B2200/0008—Colpitts oscillator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0048—Circuit elements of oscillators including measures to switch the frequency band, e.g. by harmonic selection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0056—Circuit elements of oscillators including a diode used for switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Superheterodyne Receivers (AREA)

Abstract

내용 없음

Description

이중 게이트 튜너블 발진기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 구체화 하는 텔레비젼 수상기의 동조기를 도시하는 개략 다이어그램.
제1a도는 제1도에 도시된 국부 발진기의 한 양상을 이해하는데 유용한 등가 회로의 개략 다이어그램.
제1b도는 제1도에 도시된 국부 발진기의 변형에 대한 개략 다이어그램.
제1c도는 제1b도에 도시된 변형을 이해하는데 유용한 등가 회로의 개략 다이어그램.
제2도는 제1도에 블록형으로 도시된 동조기의 RF단을 상세히 도시한 개략 다이어그램.
* 도면의 주요부분에 대한 부호의 설명
3 : FET RF단 9 : 동조 제어 유닛
700 : 이중 게이트 FET

Claims (6)

  1. 제1(G1) 및 제2(G2) 게이트 전극, 소스 전극(S) 및 드레인 전극(D)을 갖고 있는 이중 게이트 전계효과 트랜지스터(FET)(101)와, 상기 소스 전극을 기준 전위의 한 포인트에 연결시키는 임피던스 수단(117,201)과, 선정된 주파수 범위에서 발진하도록 상기 FET를 조절하는 상기 소스 전극(S)과 상기 제1게이트 전극(G1) 사이에 연결된 발진 조절 수단(203,201,209)과, 상기 FET가 발진하는 발진 주파수를 결정하기 위해 상기 제1게이트 전극(G1)에 결합된 주파수 결정수단(300)과, 상기 제2게이트 전극을 기준 전위의 상기 포인트에 효과적으로 연결시키는 바이패스 수단(115)을 포함하는 튜너블 발진기(7)를 구비한 장치에 있어서, 이용 수단(5)은 상기 발진 주파수에서 출력 신호를 수식하는 상기 드레인 전극(D)에 연결되어 있고, 상기 주파수 결정 수단(300)은 동조 전압(TV)의 크기의 변화에 응답하여 변하는 캐패시턴스를 나타내는 바랙터 다이오드를 구비하며, 상기 바이패스 수단은 상기 선정된 주파수 범위에서 무시할 수 있는 임피던스(109)를 통하여 상기 제2게이트 전극을 바이패스하는 것을 특징으로 하는 튜너블 발진기(7)를 구비하는 장치.
  2. 제1항에 있어서, 상기 FET(101)는 금속 산화 반도체(MOS)형인 것을 특징으로 하는 튜너블 발진기(7)를 구비하는 장치.
  3. 제1항에 있어서, 상기 이용 수단(5)은 IF 신호가 발생되도록 상기 드레인 전극(D)에 제공된 상기 출력 신호를 RF 신호와 혼합시키는 믹서 수단을 포함하는 것을 특징으로 하는 튜너블 발진기(7)를 구비하는 장치.
  4. 제1항에 있어서, 상기 발진 조절 회로(203,201,209)는 제1게이트 전극(G1)과 소스 전극(S) 사이에 졀합된 제1캐패시턴스 소자(203)와 상기 소스 전극(S)과 기준 전위의 상기 포인트 사이에 결합된 제2캐패시턴스 소자(201)를 포함하는 것을 특징으로 하는 튜너블 발진기(7)를 구비하는 장치.
  5. 제4항에 있어서, 상기 발진 조절 수단(203,201,209)은 상기 FET(101)가 상기 선정된 전 범위에 걸쳐 발진하는 것을 공고히 하기 위하여 상기 동조 전압에 응답하는 제2바랙터 다이오드(209)를 구비하는 범위 연장 수단(207,209)를 포함하는 것을 특징으호 하는 튜너블 발진기(7)를 구비하는 장치.
  6. 제1항에 있어서, 상기 인덕턴스 소자(305)와 상기 주파수 결정수단(300)의 상기 제1언급된 바랙터 다이오드(307)는 상기 제1게이트 전극(G1)과 기준 전위의 상기 포인트 사이에 직렬로 연결되어 있으며, 상기 범위 연장 수단의 상기 제2언급된 바랙터 다이오드(209)는 상기 제1게이트 전극(G1)과 기준 전위의 상기 포인트 사이에 연결되어 있으며, 또한 상기 제1언급된 바랙터 다이오드(307)의 캐패시턴스가 상기 동조 전압(TV)의 크기 변화에 응답하여 변하는 것과 동일한 식으로 변하는 캐패시턴스가 나오도록 풀되어 있는 것을 특징으로 하는 튜너블 발진기(7)를 구비하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870013289A 1986-11-26 1987-11-25 이중 게이트 튜너블 발진기 KR960003664B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/935,440 US4703286A (en) 1986-11-26 1986-11-26 Dual gate tunable oscillator
US935440 1986-11-26
US86-935440 1986-11-26

Publications (2)

Publication Number Publication Date
KR880006844A true KR880006844A (ko) 1988-07-25
KR960003664B1 KR960003664B1 (ko) 1996-03-21

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Application Number Title Priority Date Filing Date
KR1019870013289A KR960003664B1 (ko) 1986-11-26 1987-11-25 이중 게이트 튜너블 발진기

Country Status (7)

Country Link
US (1) US4703286A (ko)
EP (1) EP0269427B1 (ko)
JP (1) JP2608430B2 (ko)
KR (1) KR960003664B1 (ko)
CA (1) CA1295696C (ko)
DE (1) DE3752195T2 (ko)
SG (1) SG75771A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783849A (en) * 1986-11-26 1988-11-08 Rca Licensing Corporation FET tuner
US4743866A (en) * 1986-11-26 1988-05-10 Rca Corporation Wide range oscillator
US5039956A (en) * 1987-11-17 1991-08-13 Amp Incorporated Frequency synthesizer for frequency agile modem
US4905306A (en) * 1988-02-26 1990-02-27 Rca Licensing Corporation Filter switching arrangement for a tuner
US4996599A (en) * 1989-04-14 1991-02-26 Rca Licensing Corporation Television tuner oscillator with three point tracking
KR100250628B1 (ko) * 1996-10-30 2000-04-01 윤덕용 초고주파용 전계효과 트랜지스터 회로의 게이트단자 파형 왜곡 제어회로
US6268779B1 (en) 1999-03-19 2001-07-31 Telefonaktiebolaget Lm Ericsson (Publ) Integrated oscillators and tuning circuits
JP2002176371A (ja) * 2000-12-07 2002-06-21 Alps Electric Co Ltd Ｕｈｆテレビジョンチューナの高周波増幅回路
KR101693853B1 (ko) * 2010-06-03 2017-01-17 엘지이노텍 주식회사 튜너의 동조 회로

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723905A (en) * 1971-06-21 1973-03-27 Rca Corp Dual-gate mos-fet oscillator circuit with amplitude stabilization
US4458215A (en) * 1981-08-17 1984-07-03 Rca Corporation Monolithic voltage controlled oscillator
JPS5911507U (ja) * 1982-07-15 1984-01-24 三菱電機株式会社 デユアルゲ−トｆｅｔ発振器
FR2545667B1 (fr) * 1983-05-06 1985-07-12 Portenseigne Boucle a verrouillage de phase et dispositif de demodulation de signaux modules en frequence comprenant une telle boucle
US4616193A (en) * 1985-01-22 1986-10-07 Northern Illinois Gas Company High frequency transistor oscillator with discrete resonator elements for transponder
US4593257A (en) * 1985-02-28 1986-06-03 Rca Corporation Multiband local oscillator
US4609884A (en) * 1985-05-06 1986-09-02 Motorola, Inc. Level control for a voltage controlled oscillator
US4783849A (en) * 1986-11-26 1988-11-08 Rca Licensing Corporation FET tuner
US4743866A (en) * 1986-11-26 1988-05-10 Rca Corporation Wide range oscillator

Also Published As

Publication number Publication date
DE3752195D1 (de) 1998-07-16
DE3752195T2 (de) 1998-10-08
EP0269427A2 (en) 1988-06-01
CA1295696C (en) 1992-02-11
EP0269427A3 (en) 1989-08-16
SG75771A1 (en) 2000-10-24
US4703286A (en) 1987-10-27
EP0269427B1 (en) 1998-06-10
JP2608430B2 (ja) 1997-05-07
JPS63141401A (ja) 1988-06-13
KR960003664B1 (ko) 1996-03-21

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