KR880006763A - X선 전사장치 - Google Patents

X선 전사장치 Download PDF

Info

Publication number
KR880006763A
KR880006763A KR870012222A KR870012222A KR880006763A KR 880006763 A KR880006763 A KR 880006763A KR 870012222 A KR870012222 A KR 870012222A KR 870012222 A KR870012222 A KR 870012222A KR 880006763 A KR880006763 A KR 880006763A
Authority
KR
South Korea
Prior art keywords
ray
chamber
gas
blower
mask
Prior art date
Application number
KR870012222A
Other languages
English (en)
Other versions
KR900007900B1 (ko
Inventor
미노루 이게다
료우이찌 후나쯔
겜보유기오
모또야 다니구찌
Original Assignee
미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR880006763A publication Critical patent/KR880006763A/ko
Application granted granted Critical
Publication of KR900007900B1 publication Critical patent/KR900007900B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음

Description

X선 전사 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 X선 전사 장치의 1실시예를 도시하는 정면 일부 단면도.
제2도는 제1도에 도시하는 검출 광학계 및 촬영 장치의 부분을 확대해서 도시한 도면.

Claims (4)

  1. 연성 X선을 사용해서 마스크에 헝성된 패턴을 웨이퍼에 전사하는 X선 전사 장치에 있어서, 연성 X선 발생 장치, 상기 X선 방출 창에 접속되고, 내부에 X선의 투과율이 높은 기체를 채운 대기 챔버와 상기 대기 챔버에 부착되는 마스크, 상기 마스크에 대향시켜 미소한 간극을 두어 웨이퍼를 장치하는 스테이지, 상기 대기 챔버내에 마련되고 또한 마스크 및 웨이퍼의 얼라인먼트의 상을 결합시키는 검출 광학계 및 상기 검출 광학계에서 상을 결합시킨 얼라인먼트의 상을 촬영하여 영상 신호로 변환하는 촬영 장치, 상기 촬영 장치에서 발생하는 열에 의해 상기 챔버내의 기체의 온도 상승을 방지하여 상기 검출 광학계의 드리프트를 없애게 하고 상기 촬영 장치가 설치된 부근의 기체를 배출시키는 배출구, 상기 배출구에서 배출된 기체를 냉각해서 보내는 열교환기와 송풍기, 상기 열교환기와 송풍기로부터의 기체를 대기 챔버내로 되돌려서 순환시키는 취출구를 구비하여 설치한 것을 특징으로 하는 X선 전사 장치.
  2. 특허청구의 범위 제1항에 있어서, 상기 송풍기에서 발생하는 진동을 대기 챔버에 전파하지 않도록 용수철성을 갖는 부재로 송풍기와 내기 챔버를 접속하는 것을 특징으로 하는 X선 전사 장치.
  3. 특허청구의 범위 제1항에 있어서, 상기 열교환기와 송풍기를 상기 대기 쳄버의 바깥쪽에 배치하고, 이들과 배출구 및 취출구를 덕트로 접속한 것을 특징으로 하는 X선 전사 장치.
  4. 특허청구의 범위 제1항에 있어서, 상기 검출 광학계 및 촬영 장치는 X,Y 테이블 상에 설치한 것을 특징으로 하는 X선 전사 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870012222A 1986-11-07 1987-11-02 X선 전사 장치 KR900007900B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61263725A JPS63119233A (ja) 1986-11-07 1986-11-07 Ｘ線転写装置
JP263725 1986-11-07
JP61-263725 1986-11-07

Publications (2)

Publication Number Publication Date
KR880006763A true KR880006763A (ko) 1988-07-25
KR900007900B1 KR900007900B1 (ko) 1990-10-22

Family

ID=17393438

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870012222A KR900007900B1 (ko) 1986-11-07 1987-11-02 X선 전사 장치

Country Status (3)

Country Link
US (1) US4852133A (ko)
JP (1) JPS63119233A (ko)
KR (1) KR900007900B1 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0323264B1 (en) * 1987-12-29 1997-05-14 Canon Kabushiki Kaisha X-ray exposure process using an electrically conductive x-ray mask
JPH0276212A (ja) * 1988-09-13 1990-03-15 Canon Inc 多重露光方法
DE68922061T2 (de) * 1988-10-03 1995-08-31 Canon Kk Vorrichtung zum Regeln der Temperatur.
JP2731950B2 (ja) * 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
US5138643A (en) * 1989-10-02 1992-08-11 Canon Kabushiki Kaisha Exposure apparatus
US5142120A (en) * 1990-12-21 1992-08-25 Hewlett-Packard Company Contact cooling of a projection mask
CA2077572C (en) * 1991-09-07 1998-08-18 Masahito Niibe Method of and apparatus for stabilizing shapes of objects, such as optical elements, as well as exposure apparatus using same and method of manufacturing semiconductr devices
US5491331A (en) * 1994-04-25 1996-02-13 Pilot Industries, Inc. Soft x-ray imaging device
US5627872A (en) * 1995-02-03 1997-05-06 Northrop Grumman Corporation Stationary exit window for X-ray lithography beamline
JPH09218519A (ja) * 1996-02-09 1997-08-19 Nikon Corp 露光装置の環境制御方法及び装置
AU8749798A (en) * 1997-08-29 1999-03-22 Nikon Corporation Temperature adjusting method and aligner to which this method is applied
EP1105203B1 (en) 1998-08-20 2004-01-28 Extraction Systems, Inc. Filters employing porous strongly acidic polymers
JP2001052986A (ja) * 1999-08-11 2001-02-23 Nikon Corp Ｘ線投影露光装置
US7540901B2 (en) * 2000-05-05 2009-06-02 Entegris, Inc. Filters employing both acidic polymers and physical-adsorption media
EP1357998B1 (en) * 2000-05-05 2014-12-03 Entegris, Inc. Filters employing both acidic polymers and physical-adsorption media
JP2006259143A (ja) * 2005-03-16 2006-09-28 Fuji Xerox Co Ltd 配置装置及び方法
TWI417130B (zh) * 2006-07-13 2013-12-01 Entegris Inc 過濾系統
JP6189303B2 (ja) 2011-09-12 2017-08-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． 基板処理装置
US10184179B2 (en) * 2014-01-21 2019-01-22 Applied Materials, Inc. Atomic layer deposition processing chamber permitting low-pressure tool replacement
US10375901B2 (en) 2014-12-09 2019-08-13 Mtd Products Inc Blower/vacuum
TWI746907B (zh) * 2017-12-05 2021-11-21 日商斯庫林集團股份有限公司 煙霧判定方法、基板處理方法及基板處理裝置
WO2020030256A1 (de) * 2018-08-07 2020-02-13 Ist Metz Gmbh Belichtungsanlage und verfahren zu deren betrieb

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169242A (en) * 1981-04-13 1982-10-18 Hitachi Ltd X-ray transferring device
JPS58191433A (ja) * 1982-05-04 1983-11-08 Fujitsu Ltd Ｘ線転写方法および装置
US4708484A (en) * 1984-10-24 1987-11-24 Hitachi, Ltd. Projection alignment method and apparatus

Also Published As

Publication number Publication date
US4852133A (en) 1989-07-25
JPS63119233A (ja) 1988-05-23
KR900007900B1 (ko) 1990-10-22

Similar Documents

Publication Publication Date Title
KR880006763A (ko) X선 전사장치
KR100358621B1 (ko) 액정투사장치와 램프
KR960006655A (ko) 광학장치 및 그 냉각방법
KR960002433A (ko) 이미지 디스플레이 장치
KR960018793A (ko) 화상형성 장치의 방전기 오염방지 장치
FI920826A (fi) Sovitelma tulipesäkamerassa
US2395561A (en) Projection apparatus
JPS5248964A (en) Transmission-type scanning electronic microscope
JPS57197580A (en) Picture forming device
US2690106A (en) Printing lamp and cylinder cooling means
JPH1141547A (ja) リアプロジェクション装置
JPS56117252A (en) Electrophotographic copier
SE7702447L (sv) Sett och anordning for konditionering av produkter
US2315829A (en) Cooling apparatus
KR0133675Y1 (ko) 프로젝터의 방열구조체
JPS5895372A (ja) 閃光定着装置
US3482918A (en) Exposure assembly for light sensitive diazo-type copy paper
JPH01189117A (ja) Ｘ線転写装置
JPS5359144A (en) Forced-air cooling device for v-shaped engine
JPS57107674A (en) Original reader
SU461406A1 (ru) Электрографическое устройство
JPS5546739A (en) Light source of contact photographic printer for e.p.m.
JPS61262728A (ja) 複写機の光源冷却装置
KR970019534A (ko) 브라운관 화상장치
JPS57167044A (en) Picture forming apparatus

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee