KR880004350A - 에폭시드 수지에 근거한 열저항 형성층의 제조방법 - Google Patents

에폭시드 수지에 근거한 열저항 형성층의 제조방법 Download PDF

Info

Publication number
KR880004350A
KR880004350A KR870010083A KR870010083A KR880004350A KR 880004350 A KR880004350 A KR 880004350A KR 870010083 A KR870010083 A KR 870010083A KR 870010083 A KR870010083 A KR 870010083A KR 880004350 A KR880004350 A KR 880004350A
Authority
KR
South Korea
Prior art keywords
forming layer
application
layer
epoxide
layer according
Prior art date
Application number
KR870010083A
Other languages
English (en)
Inventor
아네 헬무트
플룬트리히 빈프리트
Original Assignee
쉬미트, 렌커
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쉬미트, 렌커, 지멘스 악티엔게젤샤프트 filed Critical 쉬미트, 렌커
Publication of KR880004350A publication Critical patent/KR880004350A/ko

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Epoxy Resins (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Polyurethanes Or Polyureas (AREA)

Abstract

내용 없음

Description

에폭시드 수지에 근거한 열저항 형성층의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (15)

  1. 광용해서 중합체를 기판위에 층혹은 박막의 형으로 입히고, 활성 광선으로 네거티브 패턴을 통하여 입혀진 층 또는 박막을 조사하거나 또는 빛, 전자, 레이저 혹은 이온빔을 유도시키고, 비조사된 층 또는 박막을 제거하고, 그 다음 필요하다면 템퍼링 하는 것으로 구성된 에폭시드에 근거한 열저항성 형성층의 제조방법에 있어서, 감광중합체가 페놀-포름 알데히드 수지를 갖는 올레핀성 불포화 모노이소시아네이트의 형태로 사용됨을 특징으로 하는 방법.
  2. 제1항에 있어서, 감광중합체가 광선 또는 공중합될 수 있는 화합물, 특히 아크릴레이트 혹은 메타아크릴레이트기를 함유하는 화합물과 함께 사용됨을 특징으로 하는 방법.
  3. 제1또는 제2항에 있어서, 감광중합체가 감광개시제 및/또는 감광성 물질, 특히 a-할로겐 아세토 페논, 디 알콕시 아세토 페논, 벤조일포스핀옥시드 및 밀러케톤과 함께 사용됨을 특징으로 하는 방법.
  4. 제1내지 3항에 있어서, 부분방향족 구조를 가지는, 특히 600과 6,000사이의 에폭시드 등량가를 가지는 에폭시드가 사용됨을 특징으로 하는 방법.
  5. 메타아크릴레이트기 또는 2.4-디이소시아나토 톨루엔에 대한 하이드록시 에틸(메타)아크릴레이트의 부가생성물을 함유하는 이소시아네이트가 올레핀성 불포화 모노이소시아네이토로서 사용됨을 특징으로 하는 제1내지 4항중의 한항혹은 그 이상의 항에 따르는 방법.
  6. 에폭시드 가속제가 첨가됨을 특징으로 하는 제1내지 5항중의 한항 혹은 그 이상의 항에 따르는 방법.
  7. 광물질 충전재가 첨가됨을 특징으로 하는 제1내지 6항중의 한항 혹은 그 이상의 항에 따른 방법.
  8. 제1내지 7항중의 한항 혹은 그 이상의 항에 따라 제조된 열 저항 형성층.
  9. 정밀 도체기술에 있어서 지속적인 보호기능을 갖는 납땜 중지 및 격리층으로 제8항에 따른 형성층의 적용.
  10. 8항에 따른 형성층을 통전, 습식에칭, 건식에칭 및, 이온주입에 의해서 구조전이과정을 통해 중간보호기능을 갖게된 리지스트로서의 응용.
  11. 8항에 따른 형성층을 전기기술, 특히 반도체 기술에서 보호 및 절연물질로서의 응용.
  12. 표면파 여과기용 감쇠 덩어리로서의 제8항에 따른 형성층의 용도.
  13. 저장모둘을 갖는 전지장에서 a-방사선 보호물로서 8항에 따른 형성층의 용도.
  14. 8항에 따른 형성층을 액체결정 디스플레이에서의 방향층으로서의 응용.
  15. 8항에 따른 형성층을 다중층회로를 가진 유전체로서의 응용.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR870010083A 1986-09-11 1987-09-11 에폭시드 수지에 근거한 열저항 형성층의 제조방법 KR880004350A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3630956 1986-09-11
DE3630956.7 1986-09-11

Publications (1)

Publication Number Publication Date
KR880004350A true KR880004350A (ko) 1988-06-03

Family

ID=6309379

Family Applications (1)

Application Number Title Priority Date Filing Date
KR870010083A KR880004350A (ko) 1986-09-11 1987-09-11 에폭시드 수지에 근거한 열저항 형성층의 제조방법

Country Status (6)

Country Link
US (1) US4883730A (ko)
EP (1) EP0259727A3 (ko)
JP (1) JPS6381422A (ko)
KR (1) KR880004350A (ko)
DK (1) DK471987A (ko)
FI (1) FI873944A (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0259726A3 (de) * 1986-09-11 1989-05-10 Siemens Aktiengesellschaft Photopolymere auf Epoxidharzbasis
US5667934A (en) * 1990-10-09 1997-09-16 International Business Machines Corporation Thermally stable photoimaging composition
DE4033294A1 (de) * 1990-10-19 1992-04-23 Siemens Ag Verfahren zur fotolithographischen herstellung von strukturen auf einem traeger
US6048375A (en) * 1998-12-16 2000-04-11 Norton Company Coated abrasive
US6531335B1 (en) * 2000-04-28 2003-03-11 Micron Technology, Inc. Interposers including upwardly protruding dams, semiconductor device assemblies including the interposers, and methods
US20050095410A1 (en) * 2001-03-19 2005-05-05 Mazurkiewicz Paul H. Board-level conformal EMI shield having an electrically-conductive polymer coating over a thermally-conductive dielectric coating
US6900383B2 (en) * 2001-03-19 2005-05-31 Hewlett-Packard Development Company, L.P. Board-level EMI shield that adheres to and conforms with printed circuit board component and board surfaces
US6582990B2 (en) * 2001-08-24 2003-06-24 International Rectifier Corporation Wafer level underfill and interconnect process
US7473377B2 (en) * 2002-06-27 2009-01-06 Tokyo Electron Limited Plasma processing method
CN101397363B (zh) * 2008-08-19 2012-01-04 东莞市佳景印刷材料有限公司 一种水性紫外光固化环氧丙烯酸酯接枝聚氨酯及其制备方法
TWI384013B (zh) 2008-10-08 2013-02-01 Eternal Chemical Co Ltd 感光型聚醯亞胺
CN102234268B (zh) * 2011-01-04 2013-10-30 南京工业大学 一种uv固化多异氰酸酯改性超支化环氧丙烯酸酯的制备方法
CN104005478B (zh) * 2014-06-17 2017-01-18 海南红杉科创实业有限公司 一种建筑室内墙体的背水面防潮抗渗结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL101499C (ko) * 1951-08-20
US3776889A (en) * 1971-01-07 1973-12-04 Powers Chemco Inc Allyl carbamate esters of hydroxy-containing polymers
NL177718C (nl) * 1973-02-22 1985-11-01 Siemens Ag Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren.
US4055606A (en) * 1976-06-21 1977-10-25 Allied Chemical Corporation Novel copolyester-polyepoxide compositions
DE2919840A1 (de) * 1979-05-16 1980-11-20 Siemens Ag Verfahren zur phototechnischen herstellung von reliefstrukturen
DE2933827A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung.
US4481258A (en) * 1982-10-07 1984-11-06 Westinghouse Electric Corp. UV Curable composition and coil coatings

Also Published As

Publication number Publication date
FI873944A0 (fi) 1987-09-11
EP0259727A2 (de) 1988-03-16
JPS6381422A (ja) 1988-04-12
EP0259727A3 (de) 1989-02-08
FI873944A (fi) 1988-03-12
DK471987A (da) 1988-03-12
US4883730A (en) 1989-11-28
DK471987D0 (da) 1987-09-10

Similar Documents

Publication Publication Date Title
KR880004350A (ko) 에폭시드 수지에 근거한 열저항 형성층의 제조방법
JPS5734331A (en) Manufacture of semiconductor device
KR880003744A (ko) 비감광성 중간 액체층을 사용하여 기판상에서 광중합성 필름을 적층하는 방법
KR940001382A (ko) 집적회로 보호용 폴리이미드 처리방법
ES539842A0 (es) Procedimiento de fabricacion de circuitos impresos
KR880004351A (ko) 열저항형성층의 제조방법
IE801451L (en) Semiconductor photoresist
KR870000177A (ko) 열저항 구조층의 제조방법
JPS55158649A (en) Manufacture of electrode wiring
EP0098922A3 (en) Process for selectively generating positive and negative resist patterns from a single exposure pattern
JPS56138713A (en) Orienting substrate for liquid crystal display and its manufacture
Hiraoka et al. Photochemical and photothermal reactions on polymer surfaces
JP2886805B2 (ja) 光硬化型樹脂の露光方法及びその露光装置
JPS5530803A (en) Producing method of electronic parts
JPS566434A (en) Manufacture of semiconductor device
JPS5646522A (en) Semiconductor device and manufacture thereof
JPS5791537A (en) Manufacture of semiconductor device
JPS5513945A (en) Amorphous semiconductor device
JPS57107054A (en) Manufacture of semiconductor device
JPS5526637A (en) Manufacturing of semiconductor device
JPS559415A (en) Semiconductor manufacturing method
JPS6453415A (en) Diffusion of impurity
JPS57122530A (en) Photoetching method
JPS5655943A (en) Pattern forming method
JPS5546574A (en) Contact exposure photomask

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application