KR880003416A - 연마장치 - Google Patents

연마장치 Download PDF

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Publication number
KR880003416A
KR880003416A KR1019870008594A KR870008594A KR880003416A KR 880003416 A KR880003416 A KR 880003416A KR 1019870008594 A KR1019870008594 A KR 1019870008594A KR 870008594 A KR870008594 A KR 870008594A KR 880003416 A KR880003416 A KR 880003416A
Authority
KR
South Korea
Prior art keywords
plate
mount plate
fluid
disposed
elastic tube
Prior art date
Application number
KR1019870008594A
Other languages
English (en)
Other versions
KR910009320B1 (ko
Inventor
유다까 다까하시
Original Assignee
나가노 다게시
미쓰비시 긴소꾸 가부시기가이샤
까스가 사브로우
니혼 시리콘 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61193781A external-priority patent/JP2504420B2/ja
Priority claimed from JP61289446A external-priority patent/JP2575674B2/ja
Application filed by 나가노 다게시, 미쓰비시 긴소꾸 가부시기가이샤, 까스가 사브로우, 니혼 시리콘 가부시기가이샤 filed Critical 나가노 다게시
Publication of KR880003416A publication Critical patent/KR880003416A/ko
Application granted granted Critical
Publication of KR910009320B1 publication Critical patent/KR910009320B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

내용 없음

Description

연마장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예를 나타내는 연마장치의 중요부 단면도.
제2도는 이 연마장치의 일부인 탄성튜우브를 평면에서 본 외관도.
제3도는 종래의 연마장치의 중요부 단면도.
제4도는 마운트 판 위에 고정된 실리콘 웨이퍼의 배치를 나타내는 도면이다.
제5도는 본 발명의 다른 실시예를 나타낸다.
* 도면의 주요부분에 대한 부호의 설명
1 : 정반 2 : 마운트 판
3a : 마운트 헤드 4 : 피연마재(실리콘 웨이퍼)
6 : 탄성튜우브 8 : 유체

Claims (2)

  1. 아랫면에 피연마재(4)가 고정된 마운트 판(2)을 이 마운트 판(2)의 아랫쪽에 설치된 정반(1)위에 압압된 상태에서 상기한 피연마재(4)의 아랫면을 연마하도록 구성된 연마장치에 있어서, 상기한 마운트 판(2)의 윗면에 내부에 유체(8)를 충진한 탄성튜우브(6)를 나선상으로 배치하고, 이 탄성튜우브(6)의 윗쪽에 배설한 마운트 헤드(3a)로부터 상기한 탄성튜우브(6)의 사이에 상기한 마운트 판(2)을 압압하도록 한 것을 특징으로 하는 연마장치.
  2. 제1항에 있어서, 적어도 일부가 격막(8a)에 의하여 덮여 있는 중공탄성체를 상기의 마운트 판(2)위에 배치함과 동시에 이 중공체를 상기한 마운트 판(2) 윗면에 밀착하고, 상기한 중공체의 내부에 유체(8)를 충진하여 이 유체의 압력에 의하여 상기한 격막(8a)을 통하여 상기한 마운트 판(2)을 압압하도록 한 것을 특징으로 하는 연마장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870008594A 1986-08-19 1987-08-05 연마장치 KR910009320B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP?61-193781 1986-08-19
JP193781 1986-08-19
JP61193781A JP2504420B2 (ja) 1986-08-19 1986-08-19 研磨装置
JP61289446A JP2575674B2 (ja) 1986-12-04 1986-12-04 研磨装置
JP?61-289446 1986-12-04
JP289446 1986-12-04

Publications (2)

Publication Number Publication Date
KR880003416A true KR880003416A (ko) 1988-05-17
KR910009320B1 KR910009320B1 (ko) 1991-11-09

Family

ID=26508094

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008594A KR910009320B1 (ko) 1986-08-19 1987-08-05 연마장치

Country Status (4)

Country Link
US (1) US4897966A (ko)
EP (1) EP0264572B1 (ko)
KR (1) KR910009320B1 (ko)
DE (1) DE3765904D1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583279B1 (ko) * 2000-02-01 2006-05-25 삼성전자주식회사 반도체 웨이퍼 연마 장치에 사용하는 탄성 지지대
KR20170138406A (ko) * 2015-04-16 2017-12-15 신에쯔 한도타이 가부시키가이샤 연마헤드의 제조방법 및 연마헤드, 그리고 연마장치

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH079896B2 (ja) * 1988-10-06 1995-02-01 信越半導体株式会社 研磨装置
US5230184A (en) * 1991-07-05 1993-07-27 Motorola, Inc. Distributed polishing head
JP2814785B2 (ja) * 1991-09-27 1998-10-27 松下電器産業株式会社 ペリクル接着装置
US5193316A (en) * 1991-10-29 1993-03-16 Texas Instruments Incorporated Semiconductor wafer polishing using a hydrostatic medium
US5228243A (en) * 1992-04-15 1993-07-20 Corning Incorporated Support for a mirror blank
EP0589433B1 (en) * 1992-09-24 1999-07-28 Ebara Corporation Polishing apparatus
USRE38878E1 (en) * 1992-09-24 2005-11-15 Ebara Corporation Polishing apparatus
JPH08506769A (ja) * 1993-02-12 1996-07-23 ステパノビッチ コンドラテンコ，ブラディミール 脆性材料製部材の機械加工方法およびこの方法を実施する装置
US5635083A (en) * 1993-08-06 1997-06-03 Intel Corporation Method and apparatus for chemical-mechanical polishing using pneumatic pressure applied to the backside of a substrate
US5643053A (en) 1993-12-27 1997-07-01 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved polishing control
US5449316A (en) * 1994-01-05 1995-09-12 Strasbaugh; Alan Wafer carrier for film planarization
JP3183388B2 (ja) * 1996-07-12 2001-07-09 株式会社東京精密 半導体ウェーハ研磨装置
US5718619A (en) * 1996-10-09 1998-02-17 Cmi International, Inc. Abrasive machining assembly
DE19651761A1 (de) * 1996-12-12 1998-06-18 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
US6244946B1 (en) 1997-04-08 2001-06-12 Lam Research Corporation Polishing head with removable subcarrier
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US5882243A (en) * 1997-04-24 1999-03-16 Motorola, Inc. Method for polishing a semiconductor wafer using dynamic control
US5975998A (en) * 1997-09-26 1999-11-02 Memc Electronic Materials , Inc. Wafer processing apparatus
US6485361B1 (en) * 1997-12-18 2002-11-26 Advanced Micro Devices, Inc. Apparatus for holding and delayering a semiconductor die
US6080050A (en) * 1997-12-31 2000-06-27 Applied Materials, Inc. Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus
JPH11262857A (ja) * 1998-03-18 1999-09-28 Rohm Co Ltd 半導体ウェハの研磨装置
US5985094A (en) * 1998-05-12 1999-11-16 Speedfam-Ipec Corporation Semiconductor wafer carrier
US6106379A (en) * 1998-05-12 2000-08-22 Speedfam-Ipec Corporation Semiconductor wafer carrier with automatic ring extension
US6093089A (en) * 1999-01-25 2000-07-25 United Microelectronics Corp. Apparatus for controlling uniformity of polished material
US6383056B1 (en) 1999-12-02 2002-05-07 Yin Ming Wang Plane constructed shaft system used in precision polishing and polishing apparatuses
DE10009656B4 (de) * 2000-02-24 2005-12-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US6666756B1 (en) 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
KR20010109025A (ko) * 2000-06-01 2001-12-08 서두칠 패널연마장치용 연마툴
US7255637B2 (en) 2000-09-08 2007-08-14 Applied Materials, Inc. Carrier head vibration damping
US7497767B2 (en) * 2000-09-08 2009-03-03 Applied Materials, Inc. Vibration damping during chemical mechanical polishing
CN102909624B (zh) * 2012-11-02 2016-02-03 丰兴精密产业（惠州）有限公司 轴杆端面打磨辅助封装夹具

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US2441108A (en) * 1947-02-24 1948-05-04 Eastman Kodak Co Abrading apparatus
US3579917A (en) * 1968-11-15 1971-05-25 Speedfam Corp Polishing machine
US3849948A (en) * 1970-07-01 1974-11-26 Signetics Corp Method for making a dielectrically isolated semiconductor structure
US3740900A (en) * 1970-07-01 1973-06-26 Signetics Corp Vacuum chuck assembly for semiconductor manufacture
DE2252503C3 (de) * 1972-10-26 1975-12-18 Wilhelm Loh Kg Optikmaschinenfabrik, 6330 Wetzlar Futter für optische Linsen zur Verwendung in Linsenschleif- oder Poliermaschinen
SU743850A1 (ru) * 1978-04-10 1980-06-30 Предприятие П/Я Р-6707 Устройство дл односторонней доводки плоских поверхностей деталей
DD208576B1 (de) * 1982-06-24 1987-05-20 Teltov Geraete Regler Vorrichtung zum aufkleben von scheiben aus halbleitermaterial
FR2558095B1 (fr) * 1984-03-14 1988-04-08 Ribard Pierre Perfectionnements apportes aux tetes de travail des machines de polissage et analogues

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583279B1 (ko) * 2000-02-01 2006-05-25 삼성전자주식회사 반도체 웨이퍼 연마 장치에 사용하는 탄성 지지대
KR20170138406A (ko) * 2015-04-16 2017-12-15 신에쯔 한도타이 가부시키가이샤 연마헤드의 제조방법 및 연마헤드, 그리고 연마장치

Also Published As

Publication number Publication date
EP0264572A1 (en) 1988-04-27
EP0264572B1 (en) 1990-10-31
DE3765904D1 (de) 1990-12-06
US4897966A (en) 1990-02-06
KR910009320B1 (ko) 1991-11-09

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