KR870005911A - 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조장치 - Google Patents

초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조장치 Download PDF

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KR870005911A
KR870005911A KR1019860008505A KR860008505A KR870005911A KR 870005911 A KR870005911 A KR 870005911A KR 1019860008505 A KR1019860008505 A KR 1019860008505A KR 860008505 A KR860008505 A KR 860008505A KR 870005911 A KR870005911 A KR 870005911A
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polycrystalline silicon
reactor
waveguides
purity polycrystalline
gas
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KR1019860008505A
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KR880001252B1 (ko
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윤풍
송영목
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채영복
재단법인 한국화학연구소
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/42—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed subjected to electric current or to radiations this sub-group includes the fluidised bed subjected to electric or magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 구현하는 제조장치의 일예를 도시하는 개략 측면도.
제2도는 제1도의 요부 발췌도.
제3도는 제조 장치의 다른 예를 도시하는 개략 측면도.
* 도면의 주요 부분에 대한 부호의 설명
1:가열로 2:반응기 3:개스 유출관
5:홀더 6:스프링 12:개스 분산판
17:기화기/예열기 18:초단파 발생 장치 19,20,21:도파관
23:초단파 차폐판 24:초단파 모드

Claims (8)

  1. 반응기 내부의 상부에 초단파 차폐판(23)이 부설되고, 중앙에는 석영반응기(2)가 세워진 가열로(1)로 이루어지고, 가열로(1)의 주위에는 초단파 발생장치(18)로 부터 연장되는 도파관(19)(20)(21)이 연통되며, 이들 도파관(20)(21)에는 1이상의 개스차단막(22)이 시설되고, 전기 석영반응기의 상방은 스프링(6)의 압력을 받는 개스 유출관(3)의 홀더(5)에 압전 연관되어 짐과 아울러 하방에는 기화기/예열기(17)로 부터 연장되는 개스 주입관(11)이 개스 분산판(12)을 개재하여 연통되어진 고순도 다결정 실리콘의 제조장치.
  2. 제1항에 있어서, 가열로(1)의 내벽과 석영반응기(2)의 외벽으로 형성되어진 냉각통로(25)를 가지며, 개스분산판(12)은 냉매통로(13)를 보유함을 특징으로 하는 고순도 다결정 실리콘의 제조장치.
  3. 제2항에 있어서, 석영반응기(2)의 외벽에 따라 석영으로 된 2중관 형태의 별도의 냉각통로(26)를 갖는 것을 특징으로 하는 고순도 다결정 실리콘의 제조장치.
  4. 제1항에 있어서, 초단파 발생장치(18)로 부터 연장되는 도파관(20)(21)이 단면 직사각형을 이루고 상호 길이 방향으로 교차되게 반응기의 양측에 대향하여 설치하는 것을 특징으로 하는 고순도 다결정 실리콘의 제조장치.
  5. 제1항에 있어서, 초단파 발생장치로 부터 연장되는 도파관(19)(20)(21)이 복수의 E코너 도파관과 H코너 도파관으로 상호 길이 방향으로 교차되게 반응기의 양측에 대항하여 설치하는 것을 특징으로 하는 고순도 다결정 실리콘의 제조장치.
  6. 제1항에 있어서, 초단파 발생장치(18)로 부터 연장되는 도파관(19)(20)(21)이 동일 모드이고 지그재그 상을 이루도록 배설된 것이 특징인 다결정 실리콘의 제조장치.
  7. 접속관(190)으로 연통되고 석영반응기(2)가 중앙에 세워진 원통상 도파관 형태의 가열로(1)로 이루어지고 가열로(1)의 상부에는 초단파 발생장치(18)로 부터 연장되는 도파관(19)이 연통되며, 이들 도파관(190)에는 개스 차단막(22)이 설치되고, 석영반응기(2)의 상측은 개스유출관(3)과 직통 연결됨과 아울러 하측은 반응개스가 가열로(1)에 누출되지 않은 구조를 취하며, 하방에는 기화기/예열기(17)로 부터 연장되는 개스주입관(11)이 개스분산판(12)을 개재하여 연통되어진 고순도 다결정 실리콘의 제조장치.
  8. 제7항에 있어서, 석영 반응기(2)대신에 상부가 석영으로 된 고순도 실리콘 반응기 또는 고순도 실리콘 카바이드 반응기를 사용하는 것을 특징으로 하는 고순도 다결정 실리콘의 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860008505A 1985-12-28 1986-10-10 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조장치 KR880001252B1 (ko)

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KR1019860008505A KR880001252B1 (ko) 1985-12-28 1986-10-10 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조장치

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KR1019850009938A KR880000618B1 (ko) 1985-12-28 1985-12-28 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조 방법
KR1019860008505A KR880001252B1 (ko) 1985-12-28 1986-10-10 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조장치

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KR1019860008505A KR880001252B1 (ko) 1985-12-28 1986-10-10 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조장치

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US (2) US4900411A (ko)
JP (1) JPS6355112A (ko)
KR (2) KR880000618B1 (ko)
DE (1) DE3638931A1 (ko)
GB (1) GB2185008A (ko)
IT (1) IT1198065B (ko)

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DE3638931C2 (ko) 1990-03-15
IT8622208A1 (it) 1988-05-01
GB2185008A (en) 1987-07-08
US4786477A (en) 1988-11-22
IT8622208A0 (it) 1986-10-31
KR880001252B1 (ko) 1988-07-16
DE3638931A1 (de) 1987-07-02
KR880000618B1 (ko) 1988-04-18
JPH0137326B2 (ko) 1989-08-07
IT1198065B (it) 1988-12-21
GB8622195D0 (en) 1986-10-22
KR870005910A (ko) 1987-07-07
US4900411A (en) 1990-02-13
JPS6355112A (ja) 1988-03-09

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