KR870000152B1 - 고유스위치 온 특성을 가진 다이리스터 및 그를 응용한 양방향성장치 - Google Patents

고유스위치 온 특성을 가진 다이리스터 및 그를 응용한 양방향성장치 Download PDF

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Publication number
KR870000152B1
KR870000152B1 KR1019830005520A KR830005520A KR870000152B1 KR 870000152 B1 KR870000152 B1 KR 870000152B1 KR 1019830005520 A KR1019830005520 A KR 1019830005520A KR 830005520 A KR830005520 A KR 830005520A KR 870000152 B1 KR870000152 B1 KR 870000152B1
Authority
KR
South Korea
Prior art keywords
region
emitter
gate
thyristor
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019830005520A
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English (en)
Korean (ko)
Other versions
KR840006874A (ko
Inventor
필립 레뛰르끄
Original Assignee
라 텔레메카니끄 엘렉트리끄
쟝-뽈 프랑시롱
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 라 텔레메카니끄 엘렉트리끄, 쟝-뽈 프랑시롱 filed Critical 라 텔레메카니끄 엘렉트리끄
Publication of KR840006874A publication Critical patent/KR840006874A/ko
Application granted granted Critical
Publication of KR870000152B1 publication Critical patent/KR870000152B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13013—Bidirectional Control Thyristor [BCT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13015—DIAC - Bidirectional trigger device

Landscapes

  • Thyristors (AREA)
KR1019830005520A 1982-11-25 1983-11-23 고유스위치 온 특성을 가진 다이리스터 및 그를 응용한 양방향성장치 Expired KR870000152B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR8219728 1982-11-25
FR8219728A FR2536909A1 (fr) 1982-11-25 1982-11-25 Structure de thyristor a allumage intrinseque et son application a la realisation d'un dispositif bidirectionnel
JP19728 1982-11-25

Publications (2)

Publication Number Publication Date
KR840006874A KR840006874A (ko) 1984-12-03
KR870000152B1 true KR870000152B1 (ko) 1987-02-12

Family

ID=9279493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830005520A Expired KR870000152B1 (ko) 1982-11-25 1983-11-23 고유스위치 온 특성을 가진 다이리스터 및 그를 응용한 양방향성장치

Country Status (9)

Country Link
EP (1) EP0110777A1 (cg-RX-API-DMAC7.html)
JP (1) JPS59108353A (cg-RX-API-DMAC7.html)
KR (1) KR870000152B1 (cg-RX-API-DMAC7.html)
BR (1) BR8306509A (cg-RX-API-DMAC7.html)
DK (1) DK541383A (cg-RX-API-DMAC7.html)
ES (1) ES8501923A1 (cg-RX-API-DMAC7.html)
FR (1) FR2536909A1 (cg-RX-API-DMAC7.html)
IN (1) IN159925B (cg-RX-API-DMAC7.html)
ZA (1) ZA838817B (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2566963B1 (fr) * 1984-06-29 1987-03-06 Silicium Semiconducteur Ssc Triac de protection sans gachette, realise a partir d'un substrat a haute resistivite
EP0186140B1 (de) * 1984-12-27 1989-09-27 Siemens Aktiengesellschaft Halbleiter-Leistungsschalter
FR2579007B1 (fr) * 1985-03-12 1988-09-09 Telemecanique Electrique Interrupteur hybride
FR2582882A1 (fr) * 1985-05-30 1986-12-05 Telemecanique Electrique Relais statique comportant des thyristors normalement conducteurs.
CN107258018B (zh) 2014-12-17 2020-08-14 Abb瑞士股份有限公司 双向功率半导体器件
US12148818B2 (en) 2020-03-31 2024-11-19 Hitachi Energy Ltd Power semiconductor device comprising a thyristor and a bipolar junction transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060825A (en) * 1976-02-09 1977-11-29 Westinghouse Electric Corporation High speed high power two terminal solid state switch fired by dV/dt
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper

Also Published As

Publication number Publication date
DK541383D0 (da) 1983-11-25
ES527571A0 (es) 1984-12-01
JPS59108353A (ja) 1984-06-22
EP0110777A1 (fr) 1984-06-13
FR2536909B1 (cg-RX-API-DMAC7.html) 1985-03-29
FR2536909A1 (fr) 1984-06-01
ES8501923A1 (es) 1984-12-01
KR840006874A (ko) 1984-12-03
DK541383A (da) 1984-05-26
ZA838817B (en) 1984-07-25
IN159925B (cg-RX-API-DMAC7.html) 1987-06-13
BR8306509A (pt) 1984-07-03

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19831122

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19860318

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19861010

Patent event code: PE09021S01D

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19861219

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19870418

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee