JPS59108353A - 固有スイツチオン特性を有するサイリスタ構造及び二方向性デバイスの構造へのその応用 - Google Patents

固有スイツチオン特性を有するサイリスタ構造及び二方向性デバイスの構造へのその応用

Info

Publication number
JPS59108353A
JPS59108353A JP58221950A JP22195083A JPS59108353A JP S59108353 A JPS59108353 A JP S59108353A JP 58221950 A JP58221950 A JP 58221950A JP 22195083 A JP22195083 A JP 22195083A JP S59108353 A JPS59108353 A JP S59108353A
Authority
JP
Japan
Prior art keywords
thyristor
region
gate
emitter
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58221950A
Other languages
English (en)
Japanese (ja)
Inventor
ルタルク・フイリツプ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telemecanique SA
Original Assignee
La Telemecanique Electrique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by La Telemecanique Electrique SA filed Critical La Telemecanique Electrique SA
Publication of JPS59108353A publication Critical patent/JPS59108353A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13013—Bidirectional Control Thyristor [BCT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13015—DIAC - Bidirectional trigger device

Landscapes

  • Thyristors (AREA)
JP58221950A 1982-11-25 1983-11-25 固有スイツチオン特性を有するサイリスタ構造及び二方向性デバイスの構造へのその応用 Pending JPS59108353A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8219728 1982-11-25
FR8219728A FR2536909A1 (fr) 1982-11-25 1982-11-25 Structure de thyristor a allumage intrinseque et son application a la realisation d'un dispositif bidirectionnel

Publications (1)

Publication Number Publication Date
JPS59108353A true JPS59108353A (ja) 1984-06-22

Family

ID=9279493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58221950A Pending JPS59108353A (ja) 1982-11-25 1983-11-25 固有スイツチオン特性を有するサイリスタ構造及び二方向性デバイスの構造へのその応用

Country Status (9)

Country Link
EP (1) EP0110777A1 (cg-RX-API-DMAC7.html)
JP (1) JPS59108353A (cg-RX-API-DMAC7.html)
KR (1) KR870000152B1 (cg-RX-API-DMAC7.html)
BR (1) BR8306509A (cg-RX-API-DMAC7.html)
DK (1) DK541383A (cg-RX-API-DMAC7.html)
ES (1) ES8501923A1 (cg-RX-API-DMAC7.html)
FR (1) FR2536909A1 (cg-RX-API-DMAC7.html)
IN (1) IN159925B (cg-RX-API-DMAC7.html)
ZA (1) ZA838817B (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018503978A (ja) * 2014-12-17 2018-02-08 アーベーベー・シュバイツ・アーゲー 双方向パワー半導体デバイス
JP2023519984A (ja) * 2020-03-31 2023-05-15 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト サイリスタおよびバイポーラ接合トランジスタを備える電力半導体デバイス

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2566963B1 (fr) * 1984-06-29 1987-03-06 Silicium Semiconducteur Ssc Triac de protection sans gachette, realise a partir d'un substrat a haute resistivite
EP0186140B1 (de) * 1984-12-27 1989-09-27 Siemens Aktiengesellschaft Halbleiter-Leistungsschalter
FR2579007B1 (fr) * 1985-03-12 1988-09-09 Telemecanique Electrique Interrupteur hybride
FR2582882A1 (fr) * 1985-05-30 1986-12-05 Telemecanique Electrique Relais statique comportant des thyristors normalement conducteurs.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060825A (en) * 1976-02-09 1977-11-29 Westinghouse Electric Corporation High speed high power two terminal solid state switch fired by dV/dt
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018503978A (ja) * 2014-12-17 2018-02-08 アーベーベー・シュバイツ・アーゲー 双方向パワー半導体デバイス
JP2023519984A (ja) * 2020-03-31 2023-05-15 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト サイリスタおよびバイポーラ接合トランジスタを備える電力半導体デバイス
US12148818B2 (en) 2020-03-31 2024-11-19 Hitachi Energy Ltd Power semiconductor device comprising a thyristor and a bipolar junction transistor

Also Published As

Publication number Publication date
DK541383D0 (da) 1983-11-25
ES527571A0 (es) 1984-12-01
EP0110777A1 (fr) 1984-06-13
FR2536909B1 (cg-RX-API-DMAC7.html) 1985-03-29
FR2536909A1 (fr) 1984-06-01
ES8501923A1 (es) 1984-12-01
KR840006874A (ko) 1984-12-03
DK541383A (da) 1984-05-26
ZA838817B (en) 1984-07-25
IN159925B (cg-RX-API-DMAC7.html) 1987-06-13
BR8306509A (pt) 1984-07-03
KR870000152B1 (ko) 1987-02-12

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