Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D18/00—Thyristors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D18/00—Thyristors
  • H10D18/80—Bidirectional devices, e.g. triacs 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D18/00—Thyristors
  • H10D18/40—Thyristors with turn-on by field effect 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/117—Shapes of semiconductor bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
  • H10D84/131—Thyristors having built-in components
  • H10D84/138—Thyristors having built-in components the built-in components being FETs
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1301—Thyristor
  • H01L2924/13013—Bidirectional Control Thyristor [BCT]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1301—Thyristor
  • H01L2924/13015—DIAC - Bidirectional trigger device

Applications Claiming Priority (1)

Publications (1)

Family

ID=9279493

Family Applications (1)

Country Status (9)

Families Citing this family (7)

Family Cites Families (4)

• 1982
  • 1982-11-25 FR FR8219728A patent/FR2536909A1/fr active Granted
• 1983
  • 1983-11-23 KR KR1019830005520A patent/KR870000152B1/ko not_active Expired
  • 1983-11-23 EP EP83402259A patent/EP0110777A1/fr not_active Withdrawn
  • 1983-11-25 JP JP58221950A patent/JPS59108353A/ja active Pending
  • 1983-11-25 ES ES527571A patent/ES8501923A1/es not_active Expired
  • 1983-11-25 DK DK541383A patent/DK541383A/da not_active Application Discontinuation
  • 1983-11-25 BR BR8306509A patent/BR8306509A/pt unknown
  • 1983-11-25 ZA ZA838817A patent/ZA838817B/xx unknown
  • 1983-11-29 IN IN796/DEL/83A patent/IN159925B/en unknown

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