KR860700298A - 패턴 형성 방법 - Google Patents

패턴 형성 방법

Info

Publication number
KR860700298A
KR860700298A KR860700161A KR860700161A KR860700298A KR 860700298 A KR860700298 A KR 860700298A KR 860700161 A KR860700161 A KR 860700161A KR 860700161 A KR860700161 A KR 860700161A KR 860700298 A KR860700298 A KR 860700298A
Authority
KR
South Korea
Prior art keywords
formation method
pattern formation
pattern
formation
Prior art date
Application number
KR860700161A
Other languages
English (en)
Other versions
KR910001590B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15126984A external-priority patent/JPS6129839A/ja
Priority claimed from JP59176851A external-priority patent/JPS6155922A/ja
Priority claimed from JP60151860A external-priority patent/JPS6211852A/ja
Application filed filed Critical
Publication of KR860700298A publication Critical patent/KR860700298A/ko
Application granted granted Critical
Publication of KR910001590B1 publication Critical patent/KR910001590B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019860700161A 1984-07-23 1985-07-22 패턴 형성방법 KR910001590B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP176851 1982-10-06
JP15126984A JPS6129839A (ja) 1984-07-23 1984-07-23 ポジ形レジスト組成物
JP151269 1984-07-23
JP59176851A JPS6155922A (ja) 1984-08-27 1984-08-27 パタ−ン形成方法
JP60151860A JPS6211852A (ja) 1985-07-10 1985-07-10 パタ−ン形成方法
JP151860 1985-07-10
PCT/JP1985/000411 WO1986001009A1 (en) 1984-07-23 1985-07-22 Pattern formation

Publications (2)

Publication Number Publication Date
KR860700298A true KR860700298A (ko) 1986-08-01
KR910001590B1 KR910001590B1 (ko) 1991-03-16

Family

ID=27320078

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860700161A KR910001590B1 (ko) 1984-07-23 1985-07-22 패턴 형성방법

Country Status (5)

Country Link
US (2) US4699870A (ko)
EP (1) EP0187870B1 (ko)
KR (1) KR910001590B1 (ko)
DE (1) DE3577930D1 (ko)
WO (1) WO1986001009A1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139922A (en) * 1987-04-10 1992-08-18 Matsushita Electronics Corporation Method of making resist pattern
JP2538081B2 (ja) * 1988-11-28 1996-09-25 松下電子工業株式会社 現像液及びパタ―ン形成方法
US5290664A (en) * 1990-03-29 1994-03-01 Sharp Kabushiki Kaisha Method for preparing electrode for semiconductor device
GR910100184A (el) * 1991-04-26 1993-03-16 Dionysios Mpelechris Τυποποίηση ηλεκτρικής καλωδίωσης ανελκυστήρων.
DE69428821T2 (de) * 1993-03-25 2002-04-11 Sumitomo Electric Industries Verfahren zur Herstellung einer Mikrostruktur und einer Röntgenstrahlmaske
US5750441A (en) * 1996-05-20 1998-05-12 Micron Technology, Inc. Mask having a tapered profile used during the formation of a semiconductor device
US6444402B1 (en) * 2000-03-21 2002-09-03 International Business Machines Corporation Method of making differently sized vias and lines on the same lithography level
US7255978B2 (en) * 2000-05-09 2007-08-14 Shipley Company, L.L.C. Multi-level optical structure and method of manufacture
JP3797600B2 (ja) * 2001-09-25 2006-07-19 Ｔｄｋ株式会社 マスク形成方法、パターン化薄膜形成方法およびマイクロデバイスの製造方法
US7090962B2 (en) * 2004-12-03 2006-08-15 Industrial Technology Research Institute Alkali-soluble resin with polyaromatic group and photosensitive composition comprising the resin
KR20070120605A (ko) * 2005-04-14 2007-12-24 더 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 미세제작을 위한 희생층의 조절가능한 용해도
US8906597B2 (en) * 2008-12-19 2014-12-09 GM Global Technology Operations LLC Layered radiation-sensitive materials with varying sensitivity
JP6098063B2 (ja) * 2012-08-01 2017-03-22 日立化成株式会社 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP6057120B2 (ja) * 2012-08-03 2017-01-11 日立化成株式会社 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
KR20140124993A (ko) * 2013-04-17 2014-10-28 삼성디스플레이 주식회사 도너 기판의 제조 방법 및 그 제조 장치
KR102420018B1 (ko) * 2015-11-17 2022-07-12 삼성전자주식회사 나노 안테나 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493550A (en) * 1967-07-03 1970-02-03 American Cyanamid Co Plasticized associated polymers
US3658534A (en) * 1968-09-16 1972-04-25 Toray Industries Photosensitive polymeric material and method for the preparation thereof
US3740366A (en) * 1969-04-28 1973-06-19 Rohm & Haas Pressure sensitive adhesive containing carboxylic acid groups and polyvalent metal
US3984582A (en) * 1975-06-30 1976-10-05 Ibm Method for preparing positive resist image
US4024293A (en) * 1975-12-10 1977-05-17 International Business Machines Corporation High sensitivity resist system for lift-off metallization
JPS52146217A (en) * 1976-05-31 1977-12-05 Toshiba Corp Positive type radiation sensitive material
JPS6049300B2 (ja) * 1977-04-21 1985-11-01 株式会社東芝 耐エツチング性重合体マスクの製造法
JPS5432975A (en) * 1977-08-19 1979-03-10 Agency Of Ind Science & Technol Formation method of pattern on resist film and resist film
US4156745A (en) * 1978-04-03 1979-05-29 International Business Machines Corporation Electron sensitive resist and a method preparing the same
JPS5517112A (en) * 1978-07-21 1980-02-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Positive type radiation sensitive composition
JPS5590945A (en) * 1978-12-29 1980-07-10 Fujitsu Ltd Forming method of fine resist pattern
JPS55140836A (en) * 1979-04-19 1980-11-04 Fujitsu Ltd Pattern forming method
US4330614A (en) * 1980-10-14 1982-05-18 International Business Machines Corporation Process for forming a patterned resist mask
DE3272818D1 (en) * 1981-03-27 1986-10-02 Hitachi Ltd Radiation sensitive polymer materials

Also Published As

Publication number Publication date
DE3577930D1 (de) 1990-06-28
EP0187870A4 (en) 1988-02-23
EP0187870B1 (en) 1990-05-23
US4820609A (en) 1989-04-11
US4699870A (en) 1987-10-13
KR910001590B1 (ko) 1991-03-16
EP0187870A1 (en) 1986-07-23
WO1986001009A1 (en) 1986-02-13

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19960109

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee