KR860002864A - 패턴 형성 방법 - Google Patents

패턴 형성 방법

Info

Publication number
KR860002864A
KR860002864A KR1019850006265A KR850006265A KR860002864A KR 860002864 A KR860002864 A KR 860002864A KR 1019850006265 A KR1019850006265 A KR 1019850006265A KR 850006265 A KR850006265 A KR 850006265A KR 860002864 A KR860002864 A KR 860002864A
Authority
KR
South Korea
Prior art keywords
formation method
pattern formation
pattern
formation
Prior art date
Application number
KR1019850006265A
Other languages
English (en)
Other versions
KR930010248B1 (ko
Inventor
다까오 이와야나기
노리오 하세가와
도시히꼬 다나까
히로시 시라이시
다꾸미 우에노
미찌아끼 하시모또
세이이찌로우 시라이
가즈야 사도따
Original Assignee
가부시끼가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59191448A external-priority patent/JPS6170720A/ja
Priority claimed from JP60019920A external-priority patent/JPH0727216B2/ja
Application filed by 가부시끼가이샤 히다찌세이사꾸쇼 filed Critical 가부시끼가이샤 히다찌세이사꾸쇼
Publication of KR860002864A publication Critical patent/KR860002864A/ko
Application granted granted Critical
Publication of KR930010248B1 publication Critical patent/KR930010248B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
KR1019850006265A 1984-09-14 1985-08-29 패턴 형성 방법 KR930010248B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP191448 1984-09-14
JP59191448A JPS6170720A (ja) 1984-09-14 1984-09-14 パタ−ン形成方法
JP19920 1985-02-06
JP60019920A JPH0727216B2 (ja) 1985-02-06 1985-02-06 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
KR860002864A true KR860002864A (ko) 1986-04-30
KR930010248B1 KR930010248B1 (ko) 1993-10-15

Family

ID=26356803

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850006265A KR930010248B1 (ko) 1984-09-14 1985-08-29 패턴 형성 방법

Country Status (2)

Country Link
US (1) US4835089A (ko)
KR (1) KR930010248B1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275920A (en) * 1989-04-24 1994-01-04 Siemens Aktiengesellschaft Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water
ES2043289T3 (es) 1989-09-25 1993-12-16 Schneider Usa Inc La extrusion de capas multiples como procedimiento para hacer balones de angioplastia.
US5275913A (en) * 1990-05-08 1994-01-04 Industrial Technology Research Institute Method for preparing resist patterns utilizing solvent development with subsequent resist pattern transfer, via a photo-hardening liquid adhesive, to a receiver substrate and oxygen reactive ion etching
US5472488A (en) * 1990-09-14 1995-12-05 Hyundai Electronics America Coating solution for forming glassy layers
US5100503A (en) * 1990-09-14 1992-03-31 Ncr Corporation Silica-based anti-reflective planarizing layer
US5527872A (en) * 1990-09-14 1996-06-18 At&T Global Information Solutions Company Electronic device with a spin-on glass dielectric layer
US5304453A (en) * 1991-07-11 1994-04-19 Industrial Technology Research Institute Method for preparing resist patterns through image layer transfer to a receiver substrate, via a photo-hardening organic liquid adhesive, with subsequent oxygen reactive ion etching
DE19623891A1 (de) * 1996-06-06 1997-12-11 Micro Resist Technology Ges Fu Lichtempfindlicher, wäßrig-alkalisch entwickelbarer, negativ arbeitender Resist
JP3093720B2 (ja) * 1998-04-08 2000-10-03 松下電子工業株式会社 パターン形成方法
JP4654544B2 (ja) * 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
US20040126766A1 (en) * 2002-12-26 2004-07-01 Amorese Douglas A. Breakaway seal for processing a subarray of an array
EP1586945B1 (en) * 2002-12-26 2015-07-29 Nissan Chemical Industries, Ltd. Alkali-soluble gap filling material forming composition for lithography
JP6404757B2 (ja) 2015-03-27 2018-10-17 信越化学工業株式会社 レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
JP2021530732A (ja) * 2018-07-09 2021-11-11 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated ライン倍増のためのフォトレジスト組成物

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937085A (en) * 1954-01-11 1960-05-17 Ditto Inc Composite photosensitive plate, and method of making printing plate therefrom
US2852379A (en) * 1955-05-04 1958-09-16 Eastman Kodak Co Azide resin photolithographic composition
US3873313A (en) * 1973-05-21 1975-03-25 Ibm Process for forming a resist mask
US4125650A (en) * 1977-08-08 1978-11-14 International Business Machines Corporation Resist image hardening process
DE2948324C2 (de) * 1978-12-01 1993-01-14 Hitachi, Ltd., Tokio/Tokyo Lichtempfindliches Gemisch, enthaltend eine Bisazidverbindung, und Verfahren zur Bildung von Mustern
US4554237A (en) * 1981-12-25 1985-11-19 Hitach, Ltd. Photosensitive resin composition and method for forming fine patterns with said composition
US4407850A (en) * 1982-01-11 1983-10-04 The Perkin-Elmer Corporation Profile control photoresist
US4427713A (en) * 1983-01-17 1984-01-24 Rca Corporation Planarization technique
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
JPS60115222A (ja) * 1983-11-28 1985-06-21 Tokyo Ohka Kogyo Co Ltd 微細パタ−ン形成方法
US4631249A (en) * 1984-01-16 1986-12-23 Rohm & Haas Company Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition
US4532005A (en) * 1984-05-21 1985-07-30 At&T Bell Laboratories Device lithography using multi-level resist systems

Also Published As

Publication number Publication date
KR930010248B1 (ko) 1993-10-15
US4835089A (en) 1989-05-30

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