JPS5590945A - Forming method of fine resist pattern - Google Patents

Forming method of fine resist pattern

Info

Publication number
JPS5590945A
JPS5590945A JP16229678A JP16229678A JPS5590945A JP S5590945 A JPS5590945 A JP S5590945A JP 16229678 A JP16229678 A JP 16229678A JP 16229678 A JP16229678 A JP 16229678A JP S5590945 A JPS5590945 A JP S5590945A
Authority
JP
Japan
Prior art keywords
acid
resist pattern
resist
forming method
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16229678A
Other languages
Japanese (ja)
Other versions
JPS5712981B2 (en
Inventor
Tateo Kitamura
Yasuhiro Yoneda
Jiro Naito
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16229678A priority Critical patent/JPS5590945A/en
Publication of JPS5590945A publication Critical patent/JPS5590945A/en
Publication of JPS5712981B2 publication Critical patent/JPS5712981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve the dry etching resistance, by acid-treating and heating at an arbitrary stage, in the forming method of fine resist pattern using poly(methyl isopropenyl ketone) at the resist. CONSTITUTION:In resist pattern forming by prebaking poly(methyl isopropenyl ketone) spread on a substrate and radiating electron beam, ultraviolet ray, or the like, acid treatment is given in the midst of pattern forming by treating with use of resist solution, developing solution rinsing solution, or the like containing acid (hydrochloric acid, sulfuric acid, phosphoric acid, etc.), or by contacting with acid mist or acid vapor, and heat treatment is given at about 30-200 deg.C for 2-600 seconds to improve the dry etching resistance. Meanwhile, instead of said acids, acid precursor such as carbon tetrabromide and bromoform, or hydrogen donor such as triphenyl methane and cumene may be used.
JP16229678A 1978-12-29 1978-12-29 Forming method of fine resist pattern Granted JPS5590945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16229678A JPS5590945A (en) 1978-12-29 1978-12-29 Forming method of fine resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16229678A JPS5590945A (en) 1978-12-29 1978-12-29 Forming method of fine resist pattern

Publications (2)

Publication Number Publication Date
JPS5590945A true JPS5590945A (en) 1980-07-10
JPS5712981B2 JPS5712981B2 (en) 1982-03-13

Family

ID=15751788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16229678A Granted JPS5590945A (en) 1978-12-29 1978-12-29 Forming method of fine resist pattern

Country Status (1)

Country Link
JP (1) JPS5590945A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986001009A1 (en) * 1984-07-23 1986-02-13 Nippon Telegraph And Telephone Corporation Pattern formation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115222A (en) * 1977-03-18 1978-10-07 Toshiba Corp Radiation sensitive composition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115222A (en) * 1977-03-18 1978-10-07 Toshiba Corp Radiation sensitive composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986001009A1 (en) * 1984-07-23 1986-02-13 Nippon Telegraph And Telephone Corporation Pattern formation
US4699870A (en) * 1984-07-23 1987-10-13 Nippon Telegraph And Telephone Corporation Patterning method

Also Published As

Publication number Publication date
JPS5712981B2 (en) 1982-03-13

Similar Documents

Publication Publication Date Title
KR950027986A (en) Manufacturing method and apparatus for semiconductor device
DE3486187D1 (en) METHOD AND DEVICE FOR PRODUCING PROTECTIVE LACQUER IMAGES.
KR910005381A (en) Sample processing method
JPS5569265A (en) Pattern-forming method
JPS5590945A (en) Forming method of fine resist pattern
KR970052763A (en) Polymer removal method of semiconductor device
JPS5753939A (en) Dry etching method for thin film
JPS6425419A (en) Etching
JPS5936257B2 (en) How to remove resist material
JPS5727029A (en) Formation of mo pattern
KR20000058107A (en) Method of photoresist ash residue removal
JPS5582782A (en) Dry etching method
JPS5666038A (en) Formation of micro-pattern
JPS5711344A (en) Dry developing method
JPS58145131A (en) Dry etching of chrome film
JPS5718324A (en) Method of working
JPS6473729A (en) Formation of thin film
JPS59136931A (en) Manufacture of semiconductor device
JPS647623A (en) Cleaning method for si surface by dry type
JPS5655943A (en) Pattern forming method
JPS577934A (en) Method for forming fine pattern
JPS5624936A (en) Etching of semiconductor device
JPS57208143A (en) Method for forming fine pattern
JPS63104336A (en) Method for forming pattern
JPS57202740A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Effective date: 20060516

Free format text: JAPANESE INTERMEDIATE CODE: A131

A521 Written amendment

Effective date: 20060718

Free format text: JAPANESE INTERMEDIATE CODE: A523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060912

A61 First payment of annual fees (during grant procedure)

Effective date: 20060920

Free format text: JAPANESE INTERMEDIATE CODE: A61

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090929

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100929

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100929

Year of fee payment: 4

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100929

Year of fee payment: 4

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 5

Free format text: PAYMENT UNTIL: 20110929

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 5

Free format text: PAYMENT UNTIL: 20110929

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120929

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 6

Free format text: PAYMENT UNTIL: 20120929

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130929

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250