KR860004566A - 표면 광 처리방법 - Google Patents

표면 광 처리방법

Info

Publication number
KR860004566A
KR860004566A KR1019850008241A KR850008241A KR860004566A KR 860004566 A KR860004566 A KR 860004566A KR 1019850008241 A KR1019850008241 A KR 1019850008241A KR 850008241 A KR850008241 A KR 850008241A KR 860004566 A KR860004566 A KR 860004566A
Authority
KR
South Korea
Prior art keywords
treatment method
surface light
light treatment
treatment
light
Prior art date
Application number
KR1019850008241A
Other languages
English (en)
Other versions
KR940000497B1 (ko
Inventor
세이이찌 무라야마
간지 쯔지이
유스께 아지마
Original Assignee
가부시끼가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 히다찌세이사꾸쇼 filed Critical 가부시끼가이샤 히다찌세이사꾸쇼
Publication of KR860004566A publication Critical patent/KR860004566A/ko
Application granted granted Critical
Publication of KR940000497B1 publication Critical patent/KR940000497B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
KR1019850008241A 1984-11-21 1985-11-05 표면 광 처리방법 KR940000497B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-244444 1984-11-21
JP59244444A JPH0642456B2 (ja) 1984-11-21 1984-11-21 表面光処理方法

Publications (2)

Publication Number Publication Date
KR860004566A true KR860004566A (ko) 1986-06-23
KR940000497B1 KR940000497B1 (ko) 1994-01-21

Family

ID=17118741

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008241A KR940000497B1 (ko) 1984-11-21 1985-11-05 표면 광 처리방법

Country Status (5)

Country Link
US (1) US4678536A (ko)
EP (1) EP0184352B1 (ko)
JP (1) JPH0642456B2 (ko)
KR (1) KR940000497B1 (ko)
DE (1) DE3571836D1 (ko)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0248883B1 (en) * 1985-12-05 1993-09-22 Ncr International Inc. Selective deposition process
JPS635531A (ja) * 1986-06-25 1988-01-11 Nec Corp Ｓｉ表面清浄化・平坦化方法及びその装置
DE3751756T2 (de) * 1986-06-30 1996-08-01 Ulvac Corp Verfahren zum Abscheiden aus der Gasphase
EP0251764B1 (en) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Chemical vapour deposition methods and apparatus
JP2560064B2 (ja) * 1987-07-27 1996-12-04 日本電信電話株式会社 半導体膜の形成方法
JP2771164B2 (ja) * 1987-08-24 1998-07-02 日本電気株式会社 突起形成法
US5407867A (en) * 1988-05-12 1995-04-18 Mitsubishki Denki Kabushiki Kaisha Method of forming a thin film on surface of semiconductor substrate
US5174881A (en) * 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
DE69012084T2 (de) * 1989-12-20 1995-01-19 Texas Instruments Inc Verfahren zum Ätzen von Kupfer und dadurch hergestelltes gedrucktes Schaltbild.
US5318662A (en) * 1989-12-20 1994-06-07 Texas Instruments Incorporated Copper etch process using halides
JPH0464234A (ja) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp 配線パターンの形成方法
DE4114741C2 (de) * 1990-07-04 1998-11-12 Mitsubishi Electric Corp Verfahren zur Bildung einer Leiterbahn auf einem Halbleitersubstrat
DE4021541C1 (ko) * 1990-07-06 1991-12-19 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
US5171610A (en) * 1990-08-28 1992-12-15 The Regents Of The University Of Calif. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films
EP0501278B1 (en) * 1991-02-28 1998-09-30 Texas Instruments Incorporated Method to produce masking
US5705224A (en) * 1991-03-20 1998-01-06 Kokusai Electric Co., Ltd. Vapor depositing method
JP2680202B2 (ja) * 1991-03-20 1997-11-19 国際電気株式会社 気相成長方法及び装置
US5129991A (en) * 1991-04-30 1992-07-14 Micron Technology, Inc. Photoelectron-induced selective etch process
JPH0582490A (ja) * 1991-09-19 1993-04-02 Hitachi Ltd 選択エツチングの方法、装置
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JP3394602B2 (ja) * 1993-07-05 2003-04-07 株式会社荏原製作所 高速原子線を用いた加工方法
US5460693A (en) * 1994-05-31 1995-10-24 Texas Instruments Incorporated Dry microlithography process
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US5847390A (en) * 1996-04-09 1998-12-08 Texas Instruments Incorporated Reduced stress electrode for focal plane array of thermal imaging system and method
US5954884A (en) 1997-03-17 1999-09-21 Fsi International Inc. UV/halogen metals removal process
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6083557A (en) * 1997-10-28 2000-07-04 Raytheon Company System and method for making a conductive polymer coating
US6080987A (en) * 1997-10-28 2000-06-27 Raytheon Company Infrared-sensitive conductive-polymer coating
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
US6808758B1 (en) * 2000-06-09 2004-10-26 Mattson Technology, Inc. Pulse precursor deposition process for forming layers in semiconductor devices
JP5254308B2 (ja) * 2010-12-27 2013-08-07 東京エレクトロン株式会社 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体
EP3875633A1 (en) * 2020-03-03 2021-09-08 Stichting Nederlandse Wetenschappelijk Onderzoek Instituten Method and apparatus for forming a patterned layer of material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
JPS5898929A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp 原子層エツチング法
US4608117A (en) * 1982-06-01 1986-08-26 Massachusetts Institute Of Technology Maskless growth of patterned films
FR2543581B1 (fr) * 1983-03-31 1986-11-14 Fiori Costantino Procede pour former une couche d'oxyde sur la surface d'un substrat en materiau semiconducteur
US4478677A (en) * 1983-12-22 1984-10-23 International Business Machines Corporation Laser induced dry etching of vias in glass with non-contact masking
US4566937A (en) * 1984-10-10 1986-01-28 The United States Of America As Represented By The United States Department Of Energy Electron beam enhanced surface modification for making highly resolved structures

Also Published As

Publication number Publication date
EP0184352A1 (en) 1986-06-11
US4678536A (en) 1987-07-07
JPS61124123A (ja) 1986-06-11
JPH0642456B2 (ja) 1994-06-01
KR940000497B1 (ko) 1994-01-21
EP0184352B1 (en) 1989-07-26
DE3571836D1 (en) 1989-08-31

Similar Documents

Publication Publication Date Title
KR860004566A (ko) 표면 광 처리방법
DK84488D0 (da) Overtraeksmetode
DE3689533T3 (de) Plasmaphorese-verfahren
DK385286D0 (da) Overfladebehandlet kontaktlinse
KR870700614A (ko) -1-아릴-2-아실아미도-3-플루오로-1-프로판올의 제조방법
DK562585D0 (da) Behandling
NO170047C (no) Elektron-ione-plasmakilde
KR880701612A (ko) 레이저 가공방법
DK344485D0 (da) Hidtil ukendt behandlingsmetode
DK344585D0 (da) Hidtil ukendt behandlingsmetode
KR860004459A (ko) 열처리 방법
DE3586148D1 (de) Flaechenbehandlungsverfahren.
KR880700343A (ko) 복합곡면 생성방법
BR8407368A (pt) Aparelho de icamento
DK325285A (da) Behandlingsmetode
KR880700337A (ko) 복합곡면 생성방법
KR880700344A (ko) 복합곡면 생성방법
KR880700336A (ko) 복합곡면 생성방법
DK485981A (da) Overfladebehnadlingsmiddel
DK159088A (da) Overfladebehandlingskompostition
KR890010537A (ko) 어라인먼트방법
ES539404A0 (es) Metodo de procesado
KR850008741U (ko) 수처리기
PT84096B (pt) Processo de tratamento de superficie de produtos de cortica
BR8702604A (pt) Metodo loterico

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19971223

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee