KR860003648A - 초순도 실리콘바의 제조방법 - Google Patents

초순도 실리콘바의 제조방법 Download PDF

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Publication number
KR860003648A
KR860003648A KR1019850007450A KR850007450A KR860003648A KR 860003648 A KR860003648 A KR 860003648A KR 1019850007450 A KR1019850007450 A KR 1019850007450A KR 850007450 A KR850007450 A KR 850007450A KR 860003648 A KR860003648 A KR 860003648A
Authority
KR
South Korea
Prior art keywords
monosilane
silicon
cracking reactor
reactor
per hour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019850007450A
Other languages
English (en)
Korean (ko)
Inventor
자뀌베르 세르쥬 (외 2)
Original Assignee
마들렌드 프랑스 파브르
롱쁠랑 스뻬샬리뜨 쉬미끄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9309116&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR860003648(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 마들렌드 프랑스 파브르, 롱쁠랑 스뻬샬리뜨 쉬미끄 filed Critical 마들렌드 프랑스 파브르
Publication of KR860003648A publication Critical patent/KR860003648A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H10P95/50—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019850007450A 1984-10-30 1985-10-10 초순도 실리콘바의 제조방법 Ceased KR860003648A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR84.16544 1984-10-30
FR8416544A FR2572312B1 (fr) 1984-10-30 1984-10-30 Procede de fabrication de barreaux de silicium ultra-pur

Publications (1)

Publication Number Publication Date
KR860003648A true KR860003648A (ko) 1986-05-28

Family

ID=9309116

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850007450A Ceased KR860003648A (ko) 1984-10-30 1985-10-10 초순도 실리콘바의 제조방법

Country Status (8)

Country Link
US (2) US4734297A (enExample)
EP (1) EP0181803B1 (enExample)
JP (1) JPS61127617A (enExample)
KR (1) KR860003648A (enExample)
AT (1) ATE40668T1 (enExample)
CA (1) CA1282225C (enExample)
DE (1) DE3568154D1 (enExample)
FR (1) FR2572312B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
CN1088444C (zh) * 1996-05-21 2002-07-31 德山株式会社 多晶硅棒及其制造方法
US6544333B2 (en) 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
JP4812938B2 (ja) 1997-12-15 2011-11-09 レック シリコン インコーポレイテッド 多結晶シリコン棒製造用化学的蒸気析着方式
US20090238972A1 (en) * 2008-03-24 2009-09-24 Applied Materials, Inc. Methods and apparatus for using reduced purity silane to deposit silicon
DE102008017304A1 (de) 2008-03-31 2009-10-01 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Herstellung von Reinstsilizium
DE102008059408A1 (de) 2008-11-27 2010-06-02 Schmid Silicon Technology Gmbh Verfahren und Vorrichtungen zur Herstellung von Reinstsilizium
DE102010011853A1 (de) 2010-03-09 2011-09-15 Schmid Silicon Technology Gmbh Verfahren zur Herstellung von hochreinem Silizium
DE102015209008A1 (de) * 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan
JP2018065710A (ja) * 2016-10-18 2018-04-26 信越化学工業株式会社 多結晶シリコン塊、多結晶シリコン棒、および単結晶シリコンの製造方法
JP7549976B2 (ja) * 2016-10-18 2024-09-12 信越化学工業株式会社 単結晶シリコンの製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251143A (enExample) * 1959-05-04
FR1256290A (fr) * 1959-05-04 1961-03-17 Procédé et appareil pour la fabrication de silicium très pur
US3091517A (en) * 1959-11-25 1963-05-28 Texas Instruments Inc Method for recovery and recycling hydrogen and silicon halides from silicon deposition reactor exhaust
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
NL292610A (enExample) * 1962-05-11 1900-01-01
NL296611A (enExample) * 1963-08-09
JPS5236490B2 (enExample) * 1972-11-27 1977-09-16
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
US4207360A (en) * 1975-10-31 1980-06-10 Texas Instruments Incorporated Silicon seed production process
US4070444A (en) * 1976-07-21 1978-01-24 Motorola Inc. Low cost, high volume silicon purification process
DE2636348A1 (de) * 1976-08-12 1978-02-16 Wacker Chemitronic Verfahren zur herstellung von reinem, elementarem halbleitermaterial
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
DE2912661C2 (de) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
JPS5645850A (en) * 1979-09-18 1981-04-25 Eiichi Akatsu Manufacture of flint glass having desired refractive index
US4546009A (en) * 1979-10-01 1985-10-08 Exxon Research Engineering Co High-mobility amorphous silicon displaying non-dispersive transport properties
US4341749A (en) * 1981-08-14 1982-07-27 Union Carbide Corporation Heating method for silane pyrolysis reactor
US4468283A (en) * 1982-12-17 1984-08-28 Irfan Ahmed Method for etching and controlled chemical vapor deposition
US4597989A (en) * 1984-07-30 1986-07-01 Burroughs Corporation Method of depositing silicon films with reduced structural defects

Also Published As

Publication number Publication date
ATE40668T1 (de) 1989-02-15
JPS643803B2 (enExample) 1989-01-23
EP0181803B1 (fr) 1989-02-08
CA1282225C (fr) 1991-04-02
JPS61127617A (ja) 1986-06-14
US4831964A (en) 1989-05-23
DE3568154D1 (en) 1989-03-16
FR2572312B1 (fr) 1989-01-20
EP0181803A1 (fr) 1986-05-21
FR2572312A1 (fr) 1986-05-02
US4734297A (en) 1988-03-29

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000