DE3568154D1 - Process for the manufacture of ultrapure silicon rods - Google Patents
Process for the manufacture of ultrapure silicon rodsInfo
- Publication number
- DE3568154D1 DE3568154D1 DE8585402054T DE3568154T DE3568154D1 DE 3568154 D1 DE3568154 D1 DE 3568154D1 DE 8585402054 T DE8585402054 T DE 8585402054T DE 3568154 T DE3568154 T DE 3568154T DE 3568154 D1 DE3568154 D1 DE 3568154D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- silicon rods
- feedstream
- monosilane
- ultrapure silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8416544A FR2572312B1 (fr) | 1984-10-30 | 1984-10-30 | Procede de fabrication de barreaux de silicium ultra-pur |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3568154D1 true DE3568154D1 (en) | 1989-03-16 |
Family
ID=9309116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585402054T Expired DE3568154D1 (en) | 1984-10-30 | 1985-10-23 | Process for the manufacture of ultrapure silicon rods |
Country Status (8)
Country | Link |
---|---|
US (2) | US4734297A (de) |
EP (1) | EP0181803B1 (de) |
JP (1) | JPS61127617A (de) |
KR (1) | KR860003648A (de) |
AT (1) | ATE40668T1 (de) |
CA (1) | CA1282225C (de) |
DE (1) | DE3568154D1 (de) |
FR (1) | FR2572312B1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4826668A (en) * | 1987-06-11 | 1989-05-02 | Union Carbide Corporation | Process for the production of ultra high purity polycrystalline silicon |
US4805556A (en) * | 1988-01-15 | 1989-02-21 | Union Carbide Corporation | Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane |
US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5976481A (en) * | 1996-05-21 | 1999-11-02 | Tokuyama Corporation | Polycrystal silicon rod and production process therefor |
DE19882883B4 (de) | 1997-12-15 | 2009-02-26 | Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake | System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen |
US6544333B2 (en) * | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
US20090238972A1 (en) * | 2008-03-24 | 2009-09-24 | Applied Materials, Inc. | Methods and apparatus for using reduced purity silane to deposit silicon |
DE102008017304A1 (de) | 2008-03-31 | 2009-10-01 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Herstellung von Reinstsilizium |
DE102008059408A1 (de) | 2008-11-27 | 2010-06-02 | Schmid Silicon Technology Gmbh | Verfahren und Vorrichtungen zur Herstellung von Reinstsilizium |
DE102010011853A1 (de) | 2010-03-09 | 2011-09-15 | Schmid Silicon Technology Gmbh | Verfahren zur Herstellung von hochreinem Silizium |
DE102015209008A1 (de) * | 2015-05-15 | 2016-11-17 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Zersetzung von Monosilan |
JP2018065710A (ja) * | 2016-10-18 | 2018-04-26 | 信越化学工業株式会社 | 多結晶シリコン塊、多結晶シリコン棒、および単結晶シリコンの製造方法 |
JP2020125242A (ja) * | 2020-06-01 | 2020-08-20 | 信越化学工業株式会社 | 多結晶シリコン塊、多結晶シリコン棒、および単結晶シリコンの製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1256290A (fr) * | 1959-05-04 | 1961-03-17 | Procédé et appareil pour la fabrication de silicium très pur | |
NL251143A (de) * | 1959-05-04 | |||
US3091517A (en) * | 1959-11-25 | 1963-05-28 | Texas Instruments Inc | Method for recovery and recycling hydrogen and silicon halides from silicon deposition reactor exhaust |
US3168422A (en) * | 1960-05-09 | 1965-02-02 | Merck & Co Inc | Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited |
NL292610A (de) * | 1962-05-11 | 1900-01-01 | ||
NL296610A (de) * | 1963-08-09 | |||
JPS5236490B2 (de) * | 1972-11-27 | 1977-09-16 | ||
US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
US4207360A (en) * | 1975-10-31 | 1980-06-10 | Texas Instruments Incorporated | Silicon seed production process |
US4070444A (en) * | 1976-07-21 | 1978-01-24 | Motorola Inc. | Low cost, high volume silicon purification process |
DE2636348A1 (de) * | 1976-08-12 | 1978-02-16 | Wacker Chemitronic | Verfahren zur herstellung von reinem, elementarem halbleitermaterial |
JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
JPS53108029A (en) * | 1977-03-03 | 1978-09-20 | Komatsu Mfg Co Ltd | Method of making high purity silicon having uniform shape |
US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
US4179530A (en) * | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
DE2912661C2 (de) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
JPS5645850A (en) * | 1979-09-18 | 1981-04-25 | Eiichi Akatsu | Manufacture of flint glass having desired refractive index |
US4546009A (en) * | 1979-10-01 | 1985-10-08 | Exxon Research Engineering Co | High-mobility amorphous silicon displaying non-dispersive transport properties |
US4341749A (en) * | 1981-08-14 | 1982-07-27 | Union Carbide Corporation | Heating method for silane pyrolysis reactor |
US4468283A (en) * | 1982-12-17 | 1984-08-28 | Irfan Ahmed | Method for etching and controlled chemical vapor deposition |
US4597989A (en) * | 1984-07-30 | 1986-07-01 | Burroughs Corporation | Method of depositing silicon films with reduced structural defects |
-
1984
- 1984-10-30 FR FR8416544A patent/FR2572312B1/fr not_active Expired
-
1985
- 1985-10-10 KR KR1019850007450A patent/KR860003648A/ko not_active Application Discontinuation
- 1985-10-21 JP JP60233573A patent/JPS61127617A/ja active Granted
- 1985-10-23 AT AT85402054T patent/ATE40668T1/de not_active IP Right Cessation
- 1985-10-23 EP EP85402054A patent/EP0181803B1/de not_active Expired
- 1985-10-23 DE DE8585402054T patent/DE3568154D1/de not_active Expired
- 1985-10-29 CA CA000494062A patent/CA1282225C/fr not_active Expired - Fee Related
- 1985-10-30 US US06/792,740 patent/US4734297A/en not_active Expired - Fee Related
-
1987
- 1987-12-24 US US07/137,617 patent/US4831964A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR860003648A (ko) | 1986-05-28 |
FR2572312B1 (fr) | 1989-01-20 |
US4831964A (en) | 1989-05-23 |
JPS643803B2 (de) | 1989-01-23 |
JPS61127617A (ja) | 1986-06-14 |
EP0181803B1 (de) | 1989-02-08 |
EP0181803A1 (de) | 1986-05-21 |
CA1282225C (fr) | 1991-04-02 |
FR2572312A1 (fr) | 1986-05-02 |
US4734297A (en) | 1988-03-29 |
ATE40668T1 (de) | 1989-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8339 | Ceased/non-payment of the annual fee |