KR860003648A - 초순도 실리콘바의 제조방법 - Google Patents

초순도 실리콘바의 제조방법 Download PDF

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Publication number
KR860003648A
KR860003648A KR1019850007450A KR850007450A KR860003648A KR 860003648 A KR860003648 A KR 860003648A KR 1019850007450 A KR1019850007450 A KR 1019850007450A KR 850007450 A KR850007450 A KR 850007450A KR 860003648 A KR860003648 A KR 860003648A
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South Korea
Prior art keywords
monosilane
silicon
cracking reactor
reactor
per hour
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KR1019850007450A
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English (en)
Inventor
자뀌베르 세르쥬 (외 2)
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마들렌드 프랑스 파브르
롱쁠랑 스뻬샬리뜨 쉬미끄
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Application filed by 마들렌드 프랑스 파브르, 롱쁠랑 스뻬샬리뜨 쉬미끄 filed Critical 마들렌드 프랑스 파브르
Publication of KR860003648A publication Critical patent/KR860003648A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

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  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

초순도 실리콘바의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 흐름도.
*도면의 주요 부분에 대한 부호의 설명
a:순수모노실란 D:분해반응기 E:열교환기 F:필터 p:누출기체 r:재순환기체 v:저압팬

Claims (10)

  1. 분해반응기에서 미리 적색으로 가열되어 있는 서포트 바에 모노실란을 공급하여 이의 열분해에 의하여 실리콘 바를 제조하는 방법에 있어서, 분해반응기로 부터 발생하는 반응혼합물의 대부분이 분해반응기의 피드에 재순환을 특징으로 하는 방법.
  2. 제1항에 있어서, 재순환이 85~98용량%임을 특징으로 하는 방법.
  3. 제1 또는 2항에 있어서, 재순환유속이 시간당 퇴적하는 실리콘 kg당 20Nm3/h 이상임을 특징으로 하는 방법.
  4. 제3항에 있어서, 재순환 유속이 시간당 퇴적하는 실리콘 kg당 20~2000Nm3/h, 그리고 더욱 상세하게는 시간당 퇴적하는 실리콘 kg당 300~1200Nm3/h 이상임을 특징으로 하는 방법.
  5. 제1항에 있어서, 분해반응기 내 압력을 일정하게 유지하는 누출(bleed) 장치에 의하여 비순환기체가 시스템 외부로 방출됨을 특징으로 하는 방법.
  6. 제1항에 있어서, 분해반응기의 피드에서 회석하지 않은 모노실란의 보충속도를 조절하여 분해반응기내의 모노실란 농도를 일정하게 유지함을 특징으로 하는 방법.
  7. 제6항에 있어서, 분해반응기내의 모노실란 농도가 0.5~5몰%, 바람직하기로는 1.5~3몰%로 유지됨을 특징으로 하는 방법.
  8. 제6항에 있어서, 시간당 실리콘 1kg을 퇴적하기 위하여, 모노실란 보충속도가 1.15~1.5kg/h, 바람직하기로는 1.15~1.35kg/h 임을 특징으로 하는 방법.
  9. 제1항에 있어서, 분해반응기로 부터 발생하여 재순환하는 기체를 바람직하기로는 냉각후에 여과하여 이중에 동반할 수 있는 실리콘 분말을 제거함을 특징으로하는 방법.
  10. 제1항에 있어서, 다른 장치의 압력강하에 의하여 증가된 대기압에서, 또는 절대압 10bar까지의 고압에서 진행됨을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850007450A 1984-10-30 1985-10-10 초순도 실리콘바의 제조방법 KR860003648A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR84.16544 1984-10-30
FR8416544A FR2572312B1 (fr) 1984-10-30 1984-10-30 Procede de fabrication de barreaux de silicium ultra-pur

Publications (1)

Publication Number Publication Date
KR860003648A true KR860003648A (ko) 1986-05-28

Family

ID=9309116

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850007450A KR860003648A (ko) 1984-10-30 1985-10-10 초순도 실리콘바의 제조방법

Country Status (8)

Country Link
US (2) US4734297A (ko)
EP (1) EP0181803B1 (ko)
JP (1) JPS61127617A (ko)
KR (1) KR860003648A (ko)
AT (1) ATE40668T1 (ko)
CA (1) CA1282225C (ko)
DE (1) DE3568154D1 (ko)
FR (1) FR2572312B1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
DE19780520B4 (de) * 1996-05-21 2007-03-08 Tokuyama Corp., Tokuya Stab aus polykristallinem Silicium und Herstellungsverfahren hierfür
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
US6221155B1 (en) 1997-12-15 2001-04-24 Advanced Silicon Materials, Llc Chemical vapor deposition system for polycrystalline silicon rod production
TW201001542A (en) * 2008-03-24 2010-01-01 Applied Materials Inc Methods and apparatus for using reduced purity silane to deposit silicon
DE102008017304A1 (de) 2008-03-31 2009-10-01 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Herstellung von Reinstsilizium
DE102008059408A1 (de) 2008-11-27 2010-06-02 Schmid Silicon Technology Gmbh Verfahren und Vorrichtungen zur Herstellung von Reinstsilizium
DE102010011853A1 (de) 2010-03-09 2011-09-15 Schmid Silicon Technology Gmbh Verfahren zur Herstellung von hochreinem Silizium
DE102015209008A1 (de) * 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan
JP7549976B2 (ja) * 2016-10-18 2024-09-12 信越化学工業株式会社 単結晶シリコンの製造方法
JP2018065710A (ja) * 2016-10-18 2018-04-26 信越化学工業株式会社 多結晶シリコン塊、多結晶シリコン棒、および単結晶シリコンの製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1256290A (fr) * 1959-05-04 1961-03-17 Procédé et appareil pour la fabrication de silicium très pur
NL251143A (ko) * 1959-05-04
US3091517A (en) * 1959-11-25 1963-05-28 Texas Instruments Inc Method for recovery and recycling hydrogen and silicon halides from silicon deposition reactor exhaust
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
NL292610A (ko) * 1962-05-11 1900-01-01
NL296610A (ko) * 1963-08-09
JPS5236490B2 (ko) * 1972-11-27 1977-09-16
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
US4207360A (en) * 1975-10-31 1980-06-10 Texas Instruments Incorporated Silicon seed production process
US4070444A (en) * 1976-07-21 1978-01-24 Motorola Inc. Low cost, high volume silicon purification process
DE2636348A1 (de) * 1976-08-12 1978-02-16 Wacker Chemitronic Verfahren zur herstellung von reinem, elementarem halbleitermaterial
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
DE2912661C2 (de) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
JPS5645850A (en) * 1979-09-18 1981-04-25 Eiichi Akatsu Manufacture of flint glass having desired refractive index
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Also Published As

Publication number Publication date
DE3568154D1 (en) 1989-03-16
FR2572312A1 (fr) 1986-05-02
CA1282225C (fr) 1991-04-02
US4831964A (en) 1989-05-23
JPS643803B2 (ko) 1989-01-23
ATE40668T1 (de) 1989-02-15
EP0181803A1 (fr) 1986-05-21
FR2572312B1 (fr) 1989-01-20
EP0181803B1 (fr) 1989-02-08
JPS61127617A (ja) 1986-06-14
US4734297A (en) 1988-03-29

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