KR850008042A - 돌출접점을 가진 전자 마이크로회로 - Google Patents

돌출접점을 가진 전자 마이크로회로 Download PDF

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Publication number
KR850008042A
KR850008042A KR1019850003274A KR850003274A KR850008042A KR 850008042 A KR850008042 A KR 850008042A KR 1019850003274 A KR1019850003274 A KR 1019850003274A KR 850003274 A KR850003274 A KR 850003274A KR 850008042 A KR850008042 A KR 850008042A
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KR
South Korea
Prior art keywords
electronic
contact
microcircuit
protruding
protruding contacts
Prior art date
Application number
KR1019850003274A
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English (en)
Inventor
안토니우스 반데 헤르마누스 (외 2)
Original Assignee
아이. 엠. 레르너
엔. 브이. 필립스 글로아이람펜 파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아이. 엠. 레르너, 엔. 브이. 필립스 글로아이람펜 파브리켄 filed Critical 아이. 엠. 레르너
Publication of KR850008042A publication Critical patent/KR850008042A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

내용 없음

Description

돌출접점을 가진 전자 마이크로회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 다수의 기계적으로 형성된 돌출접점을 가진 반도체소자의 도시도. 제2도는 돌출접점이 2개의 패턴으로 형성되어 있는 반도체소자의 도시도.
* 도면의 주요부분에 대한 부호의 설명
1 : 소자 2,4,5 : 돌출접점 3 : 반도체소자 6 : 접속도선.

Claims (4)

  1. 열압축처리나 금속선으로부터 녹여진 초음파 처리구면부에 의한 접촉영역에 고착시킴에 의해 마이크로회로의 접촉영역에서 기계적으로 형성된 돌출접점을 가진 전자 마이크로 회로에 있어서, 돌출접점의 구성물질이 파라디움인 것을 특징으로 하는 돌출접점을 가진 전자 마이크로회로.
  2. 제1항에 의한 전자 마이크로회로에 있어서, 돌출접점이 순도 99.99%를 가지는 적어도 기술적으로 순수한 파라디움으로 구성된 것을 특징으로하는 돌출접점을 가진 전자 마이크로회로.
  3. 제1항 혹은 2항에 의한 전자 마이크로회로에 있어서, 돌출접점이 30㎛의 직경을 가진 것을 특징으로하는 돌출접점을 가진 것을 가진 전자 마이크로회로.
  4. 전술한 항중의 어느한 항에 의한 전자 마이크로 회로에 있어서, 돌출접점이 기판의 주위 근처의 패턴이나 더내부에 위치된 하나이상의 패턴내에 형성된 것을 특징으로하는 돌출접점을 가진 전자 마이크로회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850003274A 1984-05-21 1985-05-14 돌출접점을 가진 전자 마이크로회로 KR850008042A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8401619A NL8401619A (nl) 1984-05-21 1984-05-21 Elektronisch microcircuit voorzien van kontaktverhogingen.
NL8401619 1984-05-21

Publications (1)

Publication Number Publication Date
KR850008042A true KR850008042A (ko) 1985-12-11

Family

ID=19843977

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850003274A KR850008042A (ko) 1984-05-21 1985-05-14 돌출접점을 가진 전자 마이크로회로

Country Status (7)

Country Link
EP (1) EP0165626B1 (ko)
JP (1) JPS60254739A (ko)
KR (1) KR850008042A (ko)
DE (1) DE3574526D1 (ko)
HK (1) HK87691A (ko)
NL (1) NL8401619A (ko)
SG (1) SG87790G (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5776824A (en) 1995-12-22 1998-07-07 Micron Technology, Inc. Method for producing laminated film/metal structures for known good die ("KG") applications

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978517A (en) * 1975-04-04 1976-08-31 Motorola, Inc. Titanium-silver-palladium metallization system and process therefor
DE8122540U1 (de) * 1981-07-31 1983-01-13 Philips Patentverwaltung Gmbh, 2000 Hamburg "informationskarte mit integriertem baustein"

Also Published As

Publication number Publication date
EP0165626B1 (en) 1989-11-29
DE3574526D1 (de) 1990-01-04
NL8401619A (nl) 1985-12-16
SG87790G (en) 1990-12-21
EP0165626A1 (en) 1985-12-27
JPS60254739A (ja) 1985-12-16
JPH0476497B2 (ko) 1992-12-03
HK87691A (en) 1991-11-15

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