KR840008381A - 포지티브형 포토레지스트 조성물 - Google Patents

포지티브형 포토레지스트 조성물 Download PDF

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Publication number
KR840008381A
KR840008381A KR1019840001085A KR840001085A KR840008381A KR 840008381 A KR840008381 A KR 840008381A KR 1019840001085 A KR1019840001085 A KR 1019840001085A KR 840001085 A KR840001085 A KR 840001085A KR 840008381 A KR840008381 A KR 840008381A
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South Korea
Prior art keywords
composition
hydrogen
organic acid
acid salt
phenol
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KR1019840001085A
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English (en)
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KR920003435B1 (ko
Inventor
아키히로 후루다 (외 4)
Original Assignee
쯔지가다 다게시
수미도모 케미칼 캄파니 리미티드
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Priority claimed from JP3631883A external-priority patent/JPS59162542A/ja
Priority claimed from JP1625884A external-priority patent/JPS60159846A/ja
Application filed by 쯔지가다 다게시, 수미도모 케미칼 캄파니 리미티드 filed Critical 쯔지가다 다게시
Publication of KR840008381A publication Critical patent/KR840008381A/ko
Application granted granted Critical
Publication of KR920003435B1 publication Critical patent/KR920003435B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

내용 없음.

Description

포지티브형 포토레지스트 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도-제2도는 본 발명에 의하여 제조한 느블락 수지 및 통상의 방법에 의하여 제조한 노블락 수지의 스펙트럼 도표.

Claims (14)

  1. 수소보다 전기 양성도가 큰 2가 금속의 유기산염을 촉매로 사용하여 4 내지 7의 pH에서 마음 일반식으로 표시되는 적어도 하나의 화합물인 페놀과 포름알데히드를 부가 축합반응시켜 얻은 노블락 수지 및 퀴논디아지드 화합물로 이루어진 포지티브형 포토레지스트 조성물.
    위의 식에서, R은 수소 또는 탄소수 1 내지 4인 알킬그룹이여, 페놀화함물은 페놀 핵 하나당 치환체내 탄소수가 0.5내지 1.5인 화합물이며 하이드록실 그룹이 관해 오르트-또는 파라-위치에 치환체가 있는 것은 50몰%미만이다.
  2. 수소보다 전기 양성도가 큰 2가의 유기산 염을 촉매로 사용하여 4 내지 7의 pH에서 다음 일반식으로 표시되는 적어도 하나의 화합물인 페놀과 포름알데히드를 부분부가 축합반응 시키고, 이어서 산 촉매를 사용하여 4이하의 pH에서 부가 축합반응시켜 얻은 노블락 수지 및 퀴논디아지드 화합물로 이루어진 포트레지스트 조성물.
    위의 식이서, R은 수소 또는 탄소수 1 내지 4인 알킬 그룹이며, 페놀 화합물은 페놀핵 하나당 치환체내 탄소수가 0.5 내지 1.5인 화합물이며 하이드록실 그룹에 관해 오르토-또는 파라-위치에 치환체가 있는 것은 50몰%미만이다.
  3. 제1항에 있어서, 페놀이 95몰%이상의 m-크레졸이 함유된 페놀인 조성물.
  4. 제2항에 있어서, 페놀이 95몰%이상의 m-크레졸이 함유된 페놀인 조성물.
  5. 제1항에 있어서, 수소보다 전기 양성도가 큰 2가 금속이 Zn, Mn, Cd, Co, Mg, Pb, Ba, Ca 및 Sr중에서 선택된 조성물.
  6. 제1항에 있어서, 수소보다 전기 양성도가 큰 2가 금속이 Zr, Mn, Cd, Co, Mg 및 Pb중에서 선택된 조성물.
  7. 제2항에 있어서, 수소보다 전기 양성도가 큰 2가 금속이 Zn, Mn, Cd, Co, Mg, Pb, Ba, Ca 및 Sr중에서 선택된 조성물.
  8. 제2항에 있어서, 수소보다 전기 양성도가 큰 2가 금속의 Zn, Mn, Cd, Co, Mg 및 Pb중에서 선택된 조성물.
  9. 제1항에 있어서, 수소보다 전기 양성도가 큰 2가 금속의 유기산 염이 아연의 유기산 염인 조성물.
  10. 제2항에 있어서, 수소보다 전기 양성도가 큰 2가 금속의 유기산 염이 아연의 유기산 염인 조성물.
  11. 제1항에 있어서, 유기산 염이 아세테이트, 포르메이트, 락테이트, 또는 벤조에이트인 조성물.
  12. 제1항에 있어서, 유기산 염이 아세테이트인 조성물.
  13. 제2항에 있어서, 유기산 염이 아세테이트, 포르메이트, 락테이트, 또는 벤조어이트인 조성물.
  14. 제2항에 있어서, 유기산 염이 아세테이트인 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840001085A 1983-03-04 1984-03-03 포지티브형 감광성 내식막 조성물 KR920003435B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP36318 1983-03-04
JP3631883A JPS59162542A (ja) 1983-03-04 1983-03-04 ポジ型フオトレジスト組成物
JP036318 1983-03-04
JP1625884A JPS60159846A (ja) 1984-01-31 1984-01-31 ポジ型フオトレジスト組成物
JP16258 1984-01-31

Publications (2)

Publication Number Publication Date
KR840008381A true KR840008381A (ko) 1984-12-14
KR920003435B1 KR920003435B1 (ko) 1992-05-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840001085A KR920003435B1 (ko) 1983-03-04 1984-03-03 포지티브형 감광성 내식막 조성물

Country Status (7)

Country Link
US (1) US4863829A (ko)
EP (1) EP0118291B1 (ko)
KR (1) KR920003435B1 (ko)
CA (1) CA1255952A (ko)
DE (1) DE3482665D1 (ko)
MX (1) MX163264B (ko)
SG (1) SG9892G (ko)

Cited By (1)

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KR100447950B1 (ko) * 2001-11-22 2004-09-08 한솔제지주식회사 포지티브형 포토레지스트 조성물

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CA1279430C (en) * 1985-12-06 1991-01-22 Takashi Kubota High-molecular-weight soluble novolak resin and process for preparation thereof
DE3751743T2 (de) * 1986-03-28 1996-11-14 Japan Synthetic Rubber Co Ltd Positiv arbeitende photoempfindliche Kunststoffzusammensetzung
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US5128230A (en) * 1986-12-23 1992-07-07 Shipley Company Inc. Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
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JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100447950B1 (ko) * 2001-11-22 2004-09-08 한솔제지주식회사 포지티브형 포토레지스트 조성물

Also Published As

Publication number Publication date
SG9892G (en) 1992-03-20
MX163264B (es) 1992-03-30
EP0118291A3 (en) 1986-08-20
EP0118291B1 (en) 1990-07-11
CA1255952A (en) 1989-06-20
EP0118291A2 (en) 1984-09-12
US4863829A (en) 1989-09-05
KR920003435B1 (ko) 1992-05-01
DE3482665D1 (de) 1990-08-16

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