KR840004949A - 다수의 단결정체의 고체상태 제조방법 - Google Patents
다수의 단결정체의 고체상태 제조방법 Download PDFInfo
- Publication number
- KR840004949A KR840004949A KR1019830002434A KR830002434A KR840004949A KR 840004949 A KR840004949 A KR 840004949A KR 1019830002434 A KR1019830002434 A KR 1019830002434A KR 830002434 A KR830002434 A KR 830002434A KR 840004949 A KR840004949 A KR 840004949A
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- polycrystalline
- producing
- manufacturing
- grain growth
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B3/00—Unidirectional demixing of eutectoid materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/915—Separating from substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 제1a-1d도는 본 발명에 의한 단결정재료의 제조에 있어서 연속단계를 도시한 개략도.
제2도는 본 발명을 판재에 응용한 개략도.
제3a-3c도는 본 발명에 있어서의 단결정재료의 초기제조의 연속 단계를 도시한 개략도.
Claims (6)
- 결정방위가 조절된 단결정재료를 제조하는 방법에 있어서, (a)단결정체 부분과 결정립 성장이 가능한 다결정체 부분이 적당한 조건하에서 다결정체 부분속으로 이동 가능한 경계층에 의해서 분리된 제1재료가 제공되고, (b)결정립 성장이 가능한 다결정체 부분으로 구성된 제2재료를 제공하고, (c)제1재료의 다결정체 부분이 제2재료에 접합되도록 제1및 제2재료를 접합하며 ; 즉 단결정 경계층의 통과를 저지하지 않는접합부를 생산하고 결정립성장에 다결정 재료의 수용성이 역으로 영향을 주지 않는 제조방법에 의해서 수행되는 접합이 제공되고, (d)단결정체가 접합부를 통하여 제2재료 속으로 성장할 수 있도록 열적 변화부 속에서 접합된 재료를 처리하는 것을 특징으로 하는 단결정체 제조방법.
- 제1항에 있어서, 공정(d)에 있어 다결정체가 남아있는 부분에서 단결정립성장을 멈추고 그 제조방법을 반복하기 위한 초기 재료를 제공하도록 상기 재료의 단결정-경계층 다결정체 부분을 절단해내는 단계를 포함하는 것을 특징으로 하는 단결정체 제조방법.
- 제1항에 있어서, 제1재료 및 제2재료 내의 다결정재료가 단결정체 방위를 지닌 단결정립성장이 가능한 조직을 지니게 된것을 특징으로 하는 단결정체 제조방법.
- 제1항에 있어서, 제1및 제2재료가 제1감마 소울버스 온도 아래 150℉-400℉(66℃-204℃)인 온도에서 수행되는 확산접합에 의해서 접합된 니켈기 초합금인 것을 특징으로 하는 단결정체 제조방법.
- 제1항에 있어서, 제1과 제2재료는 판형상으로 , 중첩 접합부로 접합되는 것을 특징으로 하는 단결정체 제조방법.
- 제5항에 있어서, 선단부(제1재료의 단결정 부분에 가장 가까운 단부)가 접합부를 혼합시키기 위하여 모따기 되어 있는 것을 특징으로 하는 단결정체 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US383872 | 1982-06-01 | ||
US06/383,872 US4475980A (en) | 1982-06-01 | 1982-06-01 | Solid state production of multiple single crystal articles |
US383,872 | 1982-06-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR840004949A true KR840004949A (ko) | 1984-10-31 |
KR890001134B1 KR890001134B1 (ko) | 1989-04-24 |
Family
ID=23515087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019830002434A KR890001134B1 (ko) | 1982-06-01 | 1983-06-01 | 단결정체의 고체상태 제조방법 |
Country Status (17)
Country | Link |
---|---|
US (1) | US4475980A (ko) |
JP (1) | JPS58223688A (ko) |
KR (1) | KR890001134B1 (ko) |
AU (1) | AU552596B2 (ko) |
BE (1) | BE896829A (ko) |
CA (1) | CA1211688A (ko) |
CH (1) | CH664769A5 (ko) |
DE (1) | DE3318766A1 (ko) |
ES (1) | ES522797A0 (ko) |
FR (1) | FR2527650B1 (ko) |
GB (1) | GB2121312B (ko) |
IL (1) | IL68736A0 (ko) |
IT (1) | IT1163416B (ko) |
NL (1) | NL8301799A (ko) |
NO (1) | NO161513C (ko) |
SE (1) | SE462852B (ko) |
ZA (1) | ZA833928B (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5154884A (en) * | 1981-10-02 | 1992-10-13 | General Electric Company | Single crystal nickel-base superalloy article and method for making |
US5399313A (en) * | 1981-10-02 | 1995-03-21 | General Electric Company | Nickel-based superalloys for producing single crystal articles having improved tolerance to low angle grain boundaries |
US4634491A (en) * | 1985-06-21 | 1987-01-06 | Inco Alloys International, Inc. | Process for producing a single crystal article |
US5100484A (en) * | 1985-10-15 | 1992-03-31 | General Electric Company | Heat treatment for nickel-base superalloys |
US6074602A (en) * | 1985-10-15 | 2000-06-13 | General Electric Company | Property-balanced nickel-base superalloys for producing single crystal articles |
DE3669044D1 (de) * | 1985-12-19 | 1990-03-22 | Bbc Brown Boveri & Cie | Verfahren zum zonengluehen eines metallischen werkstuecks. |
US5068084A (en) * | 1986-01-02 | 1991-11-26 | United Technologies Corporation | Columnar grain superalloy articles |
GB2234521B (en) * | 1986-03-27 | 1991-05-01 | Gen Electric | Nickel-base superalloys for producing single crystal articles having improved tolerance to low angle grain boundaries |
US5639300A (en) * | 1987-12-07 | 1997-06-17 | Massachusetts Institute Of Technology | Epitaxy with reusable template |
EP0399054B1 (en) * | 1988-12-10 | 1995-08-30 | Kawasaki Steel Corporation | Production method of crystal member having controlled crystal orientation |
US5106010A (en) * | 1990-09-28 | 1992-04-21 | Chromalloy Gas Turbine Corporation | Welding high-strength nickel base superalloys |
US5394420A (en) * | 1994-01-27 | 1995-02-28 | Trw Inc. | Multiform crystal and apparatus for fabrication |
DE19624055A1 (de) * | 1996-06-17 | 1997-12-18 | Abb Research Ltd | Nickel-Basis-Superlegierung |
US5710057A (en) * | 1996-07-12 | 1998-01-20 | Kenney; Donald M. | SOI fabrication method |
CA2307496A1 (en) | 1997-10-27 | 1999-07-08 | Gary W. Swartzbeck | Turbine components with skin bonded to substrates |
US6325871B1 (en) | 1997-10-27 | 2001-12-04 | Siemens Westinghouse Power Corporation | Method of bonding cast superalloys |
US7507453B2 (en) * | 2000-10-31 | 2009-03-24 | International Imaging Materials, Inc | Digital decoration and marking of glass and ceramic substrates |
US7704321B2 (en) * | 2002-05-13 | 2010-04-27 | Rutgers, The State University | Polycrystalline material having a plurality of single crystal particles |
US7022303B2 (en) * | 2002-05-13 | 2006-04-04 | Rutgers, The State University | Single-crystal-like materials |
EP1641965A4 (en) * | 2003-05-14 | 2008-07-02 | Univ Rutgers | SINGLE CRYSTALLINE MATERIALS |
DE102008039113B3 (de) * | 2008-08-21 | 2010-01-21 | Mtu Aero Engines Gmbh | Verfahren zum Verbinden eines einkristallinen Bauteils mit einem polykristallinen Bauteil und Turbinenblisk |
US9551053B2 (en) | 2011-06-23 | 2017-01-24 | United Technologies Corporation | Method for limiting surface recrystallization |
DE102014204408A1 (de) * | 2014-03-11 | 2015-09-17 | Siemens Aktiengesellschaft | Nickelbasis-Superlegierung mit erhöhter Oxidationsbeständigkeit, Pulver, Verfahren zum Schweißen und Bauteil |
FR3105035B1 (fr) * | 2019-12-23 | 2021-12-10 | Safran Helicopter Engines | Procédé de fabrication d’aube de turbomachine et aube de turbomachine |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3027281A (en) * | 1958-05-16 | 1962-03-27 | Westinghouse Electric Corp | Single crystals of brittle materials |
US3108861A (en) * | 1961-08-09 | 1963-10-29 | Coast Metals Inc | Nickel-base brazing alloys |
US3494709A (en) * | 1965-05-27 | 1970-02-10 | United Aircraft Corp | Single crystal metallic part |
US3772090A (en) * | 1971-07-22 | 1973-11-13 | Gen Electric | Alloy microstructure control |
US3956032A (en) * | 1974-09-24 | 1976-05-11 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Process for fabricating SiC semiconductor devices |
US4033792A (en) * | 1974-12-23 | 1977-07-05 | United Technologies Corporation | Composite single crystal article |
US3975219A (en) * | 1975-09-02 | 1976-08-17 | United Technologies Corporation | Thermomechanical treatment for nickel base superalloys |
US4196041A (en) * | 1976-02-09 | 1980-04-01 | Motorola, Inc. | Self-seeding conversion of polycrystalline silicon sheets to macrocrystalline by zone melting |
US4044618A (en) * | 1976-03-15 | 1977-08-30 | Anton Braun | Machine drive mechanism |
US4209348A (en) * | 1976-11-17 | 1980-06-24 | United Technologies Corporation | Heat treated superalloy single crystal article and process |
US4402787A (en) * | 1979-05-31 | 1983-09-06 | Ngk Insulators, Ltd. | Method for producing a single crystal |
US4318753A (en) * | 1979-10-12 | 1982-03-09 | United Technologies Corporation | Thermal treatment and resultant microstructures for directional recrystallized superalloys |
GB2079175B (en) * | 1980-06-26 | 1983-12-07 | Gen Electric Co Ltd | Growing crystals |
US4385939A (en) * | 1981-11-13 | 1983-05-31 | Trw Inc. | Method of producing a single crystal article |
-
1982
- 1982-06-01 US US06/383,872 patent/US4475980A/en not_active Expired - Lifetime
-
1983
- 1983-05-13 GB GB08313226A patent/GB2121312B/en not_active Expired
- 1983-05-19 SE SE8302850A patent/SE462852B/sv not_active IP Right Cessation
- 1983-05-20 NL NL8301799A patent/NL8301799A/nl active Search and Examination
- 1983-05-20 IL IL68736A patent/IL68736A0/xx not_active IP Right Cessation
- 1983-05-24 DE DE19833318766 patent/DE3318766A1/de active Granted
- 1983-05-24 CH CH2802/83A patent/CH664769A5/de not_active IP Right Cessation
- 1983-05-25 BE BE0/210838A patent/BE896829A/fr not_active IP Right Cessation
- 1983-05-25 FR FR838308596A patent/FR2527650B1/fr not_active Expired
- 1983-05-26 CA CA000429017A patent/CA1211688A/en not_active Expired
- 1983-05-26 NO NO831861A patent/NO161513C/no unknown
- 1983-05-27 AU AU15054/83A patent/AU552596B2/en not_active Ceased
- 1983-05-27 JP JP58094769A patent/JPS58223688A/ja active Granted
- 1983-05-30 ZA ZA833928A patent/ZA833928B/xx unknown
- 1983-05-30 ES ES522797A patent/ES522797A0/es active Granted
- 1983-05-30 IT IT21371/83A patent/IT1163416B/it active
- 1983-06-01 KR KR1019830002434A patent/KR890001134B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU552596B2 (en) | 1986-06-05 |
US4475980A (en) | 1984-10-09 |
IT1163416B (it) | 1987-04-08 |
GB2121312A (en) | 1983-12-21 |
JPS58223688A (ja) | 1983-12-26 |
GB2121312B (en) | 1985-10-23 |
AU1505483A (en) | 1983-12-08 |
GB8313226D0 (en) | 1983-06-22 |
IL68736A0 (en) | 1983-09-30 |
FR2527650A1 (fr) | 1983-12-02 |
CH664769A5 (de) | 1988-03-31 |
NL8301799A (nl) | 1984-01-02 |
NO831861L (no) | 1983-12-02 |
SE462852B (sv) | 1990-09-10 |
ES8403980A1 (es) | 1984-05-01 |
ZA833928B (en) | 1984-02-29 |
SE8302850L (sv) | 1983-12-02 |
KR890001134B1 (ko) | 1989-04-24 |
JPH0240637B2 (ko) | 1990-09-12 |
FR2527650B1 (fr) | 1989-12-08 |
SE8302850D0 (sv) | 1983-05-19 |
IT8321371A1 (it) | 1984-11-30 |
ES522797A0 (es) | 1984-05-01 |
BE896829A (fr) | 1983-09-16 |
IT8321371A0 (it) | 1983-05-30 |
DE3318766C2 (ko) | 1992-06-04 |
DE3318766A1 (de) | 1983-12-08 |
NO161513C (no) | 1989-08-30 |
NO161513B (no) | 1989-05-16 |
CA1211688A (en) | 1986-09-23 |
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