KR840000665A - High rate sputtering apparatus and method - Google Patents

Abstract

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Description

High rate sputtering apparatus and method

Since this is an open matter, no full text was included.

1 is a schematic diagram of a sputtering apparatus according to a preferred embodiment of the present invention.

2 is an enlarged view of a portion of the FIG. 1 device.

3 is a perspective view of a second FIG. Portion.

4 is a sectional view of a modification of the part shown in FIG.

Claims (95)

An apparatus for high rate sputtering of selected target materials on a substrate in a vacuum, (a) a vacuum chamber having a positive electrode, a negative electrode and means for providing an active plasma therebetween, (b) the negative electrode, which is movable in the vacuum chamber and is spaced apart from the substrate, the negative electrode comprising the selected target material; (c) means for moving said cathode relative to said active plasma such that a portion of said cathode is disposed within said active plasma, while another adjacent portion is disposed outside said active plasma. 2. The apparatus according to claim 1, wherein the means for moving the cathode is provided as a continuous moving means, and the portion of the cathode disposed in the active plasma at a given time is considerably smaller than its other adjacent portion. 2. The apparatus according to claim 1, further comprising cooling means disposed closely to the movable cathode. 4. The apparatus of claim 3, wherein said means for providing a plasma comprises means for providing an electric field between an anode and a cathode, wherein said movable cathode is disposed in said active plasma so as to have a thickness extending in a direction parallel to said electric field. And the cathode is movable relative to the plasma in a direction perpendicular to the electric field. 5. The apparatus of claim 4, wherein the autocathode comprises a magnetic target material and further comprises means for providing a magnetic field in a direction perpendicular to the electric field to enhance the active plasma. Wherein said portion of target material is supersaturated by said magnetic field. 6. The device of claim 5, wherein the thickness of the target material included in the cathode is small compared to its length and width. 4. The apparatus according to claim 3, wherein said cooling means comprises first cooling means disposed in close proximity to said portion of the movable cathode disposed in the active plasma at a given time. 8. The apparatus of claim 7, wherein the apparatus further comprises a support structure for slidably supporting the portion of the movable cathode disposed in the polymas at a given time, wherein the first cooling means is disposed in the support structure. Device. 8. The apparatus according to claim 7, wherein said first cooling means is provided as conduction cooling means. 4. The apparatus as claimed in claim 3, wherein said cooling means comprises second cooling means arranged intimately with said other adjacent portion of said movable cathode disposed outside said active plasma at a given time. 11. The apparatus according to claim 10, wherein the second cooling means is provided as heat dissipation cooling means. 11. The apparatus of claim 10, further comprising shielding means for separating the cathode moving means and the second cooling means from an active plasma. 2. The apparatus according to claim 1, wherein the negative electrode has an end portion having means for reversing the direction of movement of the negative electrode when the negative electrode portion disposed in the active plasma is a predetermined distance from a short portion. 14. The apparatus of claim 13, wherein the apparatus further comprises means for sensing the thickness of the movable cathode, the sensing means being disposed along the passageway of the movable cathode outside the active plasma. 2. The device of claim 1, wherein the cathode is in the form of a rod made of a target material and is movably disposed in the longitudinal axis thereof, wherein the first end of the rod is disposed within the active plasma and includes a second end thereof Adjacent portions are disposed outside the plasma and the cathodic moving means is provided to advance the rod into the active plasma, and the device passes through the plasma and the first end of the rod disposed in the plasma in a direction parallel to the longitudinal axis of the rod. The apparatus also includes means for providing. 16. The device of claim 15, wherein the rod is provided with a magnet having a first pole of selected polarity formed by its first end and a second pole of opposite polarity formed by the second end, wherein said means for providing a magnetic field is provided. The device arranged to have a magnetic pole of the same polarity as the first magnetic pole of the rod closely to increase the strength of the magnetic field passing through the active plasma and the first magnetic pole of the rod 17. The device of claim 15 or 16, further comprising means for slidably supporting a portion of the rod that is outside the active plasma. 18. The apparatus according to claim 17, wherein said support means is provided as a cooling means. 16. The apparatus according to claim 15, further comprising shielding means disposed between the active plasma and means disposed inside the vacuum but outside the plasma to protect the latter means from sputtering. An apparatus for high rate sputtering of a selected target material in a vacuum, the apparatus comprising: an active plasma between an anode, a movable cathode comprising the selected target material and a portion of the movable cathode disposed closely to the anode at a given time Vacuum chamber with means for forming the conditions necessary to provide: Means for continuously moving the cathode such that a portion of the cathode is disposed within the active plasma and another adjacent portion is disposed outside the active plasma at a given time: A cooled support structure for slidably supporting a portion of the movable cathode in the active plasma, and additional cooling means disposed in the passage closely to the movable cathode outside the active plasma to achieve cooling of the other adjacent portion of the cathode; High rate sputtering apparatus comprising a. 21. The apparatus of claim 20, wherein the movable cathode has a relatively small thickness relative to its length and width. An apparatus for high rate sputtering of selected target materials in a vacuum, Means for forming the conditions necessary to provide an active plasma between the anode, the movable cathode comprising a magnetic target material and the anode and the portion of the movable cathode disposed adjacent to the anode at a given time; A vacuum chamber comprising means for providing a magnetic field to enhance the active plasma: Means for continuously moving the cathode such that a portion of the cathode is disposed within the plasma and another adjacent portion is disposed outside the plasma at a given time: A cooled support structure for slidably supporting a portion of the movable cathode in the active plasma; and additional cooling means disposed in the passage closely to the movable cathode outside the active plasma to provide cooling of the other adjacent portion of the cathode. And wherein the movable cathode has a thickness selected to obtain supersaturation of the magnet target material in the portion of the movable cathode disposed in the plasma at a given time. 23. The apparatus according to claim 20 or 22, further comprising shielding means for separating the means for continuously moving the cathode and the additional cooling means from active plasma. 23. The apparatus according to claim 20 or 22, further comprising means for continuously sensing the thickness of the movable cathode, the sensing means being disposed along the passage of the movable cathode outside the active plasma. An apparatus for high rate sputtering of a selected target material in a vacuum, the apparatus comprising: an anode, a cathode comprising said selected target material and in the form of flexible ribbon means and means for forming the conditions necessary to provide an active plasma therebetween. Vacuum room with: Means for arresting a portion of the movable ribbon means in the active plasma at a predetermined distance from the anode: Storage means for storing another adjacent portion of the ribbon means disposed outside the active plasma; and means for moving the ribbon means through the active plasma between the storage means and the support means. . The apparatus of claim 25 further comprising first cooling means provided in the support means. 26. The apparatus according to claim 25, further comprising second cooling means disposed outside the plasma and in a passage of a ribbon means between the support means and the storage means. An apparatus for high rate sputtering of selected target materials in a vacuum, A vacuum chamber having a positive electrode, a movable negative electrode comprising the selected target material and provided in the form of flexible ribbon means and means for forming the conditions necessary to provide an active plasma between the positive electrode and a portion of the movable negative electrode. Cooled support means arranged at a predetermined distance from the anode to slidably support a portion of the cathode passing through the active plasma at a given time: Means for passing the ribbon means past the cooled support unit between the two rails and the two rails respectively attached to both ends of the ribbon means for storing portions of the ribbon means disposed outside the active plasma. High rate sputtering apparatus characterized by the above-mentioned. 29. The apparatus of claim 28, further comprising cooling means disposed in a ribbon passage close to the ribbon means outside the active plasma. 29. The apparatus of claim 28, further comprising means disposed along the ribbon passageway outside the active plasma to provide a control signal for sensing an end of the ribbon means and for redirecting the ribbon means of movement. 29. The apparatus of claim 28, wherein the ribbon means further comprises means for sensing thickness, the sensing means being disposed along the passage of the ribbon means outside the active plasma. 29. The apparatus of claim 28, further comprising shielding means disposed between the active plasma and other means disposed in the vacuum chamber but outside the active plasma to protect the other means from sputtering. An apparatus for high rate sputtering of selected target materials in a vacuum, A vacuum chamber having an anode, a movable cathode provided in the form of a rotating drum surface comprising the selected target material and means for forming the conditions necessary to provide an active plasma therebetween: Support means disposed at a predetermined distance from the anode to slidably support a portion of the rotating drum surface in the active plasma while another adjacent portion of the drum surface is disposed outside the active plasma at a given time: and a predetermined speed And means for rotating the drum surface. 34. The apparatus according to claim 33, further comprising first cooling means provided in said support means. 34. The apparatus of claim 33, further comprising second cooling means disposed closely to the rotating drum surface outside the active plasma. 36. The apparatus according to claim 35, further comprising shielding means for separating the drum surface rotating means and the second cooling means from an active plasma. 34. The apparatus of claim 33, further comprising means for continuously sensing the thickness of the rotating drum surface, the sensing means being disposed along a passage of the rotating drum surface outside of active plasma. 34. The apparatus of claim 33, wherein the rotating drum surface is arranged to have a longitudinal axis in a direction perpendicular to the electric field formed between the anode and the drum surface. An apparatus for high rate sputtering of selected target materials in a vacuum, A vacuum chamber having an anode, a cathode provided in the form of a rotating disk comprising the selected target material and means for forming the conditions necessary to provide an active plasma therebetween: Support means arranged at a predetermined distance from the anode to slidably support a portion of the disk while another adjacent portion of the disk is disposed outside the plasma at a given time: and means for rotating the disk at a predetermined speed High rate sputtering apparatus comprising a. 40. The apparatus according to claim 39, further comprising first cooling means provided in said support means. 40. The apparatus of claim 39, further comprising second cooling means disposed closely to the rotating disk outside the plasma. 41. The apparatus according to claim 40, further comprising shielding means for separating said disk rotating means and said second cooling means from an active plasma. 40. The apparatus of claim 39, further comprising means for continuously sensing the thickness of the rotating disk, the sensing means being disposed along a passage of the disk outside the plasma. 40. The apparatus of claim 39, wherein the rotating disk is arranged to have a planar surface extending in a direction perpendicular to that of the electric field formed between the anode and the disk. 40. The method of claim 25, 33 or 39, wherein the cathode comprises a magnetic target material and the device further comprises means for providing a magnetic field to enhance the active plasma, wherein the thickness of the movable cathode is within the active plasma. Said device selected smaller than other dimensions of its cathode to obtain supersaturation of the target material. An apparatus for high rate sputtering of selected target materials in a vacuum, The other end, which is movable in the direction of the longitudinal axis, with the first end disposed in the active plasma and including the second end, is active between the cathode, the anode and the electrodes of the rod-shaped target material disposed outside the plasma. A vacuum chamber having means for forming the conditions necessary to provide a plasma: and means for advancing the rod into the active plasma. 47. The apparatus of claim 46, further comprising means for providing a magnetic field to enhance the active plasma, the magnetic field disposed to pass through the active plasma and the first end of a rod disposed in the plasma in a direction parallel to the longitudinal axis. The device. An apparatus for high rate sputtering of selected target materials in a vacuum, A vacuum chamber having means for forming the conditions necessary for providing an active plasma between the anode and the movable cathode: The movable cathode made of a magnet target material in the form of a magnetized rod that is movable in the longitudinal direction, Another adjacent portion of the rod that encloses a second end forming a second pole of opposite polarity is disposed outside of the active plasma, while the first of the magnetizing rod is disposed within the active plasma and forms a first pole of a predetermined polarity. End: A magnetic field providing means for providing a magnetic field passing through the active plasma and the first magnetic pole of the magnetizing rod in a direction parallel to the longitudinal axis of the rod, the magnetic field providing means having a magnetic pole equal to the first magnetic pole of the rod and disposed closely to the rod; Said device comprising means for advancing the rod into active plasma. 49. The device of claim 46 or 48, further comprising means for slidably supporting the adjacent portion of the rod disposed outside the active plasma. 50. The apparatus according to claim 49, wherein said support means is provided as a cooling means. 49. The device of claim 46 or 48, further comprising shielding means disposed between the active plasma and other means disposed outside the plasma to protect from sputtering. An apparatus for high rate sputtering of a selected magnetic target material on a non-magnetic long movable substrate in vacuum, comprising: a movable cathode and the cathode formed of the target material in the form of an anode continuously movable ribbon, a rotating drum surface or a rotating disk; A vacuum chamber having means for forming the conditions necessary to provide an active plasma between a portion of the movable cathode which is arranged closely to the anode at a given time: Means for providing a magnetic field to enhance said active plasma: Means for moving the cathode through the plasma such that another adjacent portion of the movable cathode is disposed outside the active plasma while a portion thereof is disposed within the active plasma: The movable cathode having a thickness selected to obtain supersaturation by the magnetic field of the portion of the movable cathode disposed in the active plasma at a given time; A first cooling means for slidably supporting a portion of the movable cathode in an active plasma, and a second cooling means disposed closely to the movable cathode outside the plasma and in the passage of the cathode; Sputtering device. 53. The apparatus according to claim 52, further comprising shielding means for separating active plasma from the cathode movement means and the second cooling means. 53. The apparatus of claim 52, further comprising means for sensing the thickness of the movable cathode, the sensing means being disposed along a passageway of the movable cathode outside the active plasma. A method for high rate sputtering of selected target materials on a substrate in vacuo, Forming a vacuum chamber anode and a cathode comprising the selected target material and providing the conditions necessary to obtain an active plasma therebetween: The cathode is arranged to be movable in the vacuum chamber at a distance from the substrate: Moving the cathode relative to the active plasma such that a portion thereof is disposed within the active plasma while another adjacent portion of the cathode is disposed outside the active plasma. 56. The method of claim 55, wherein moving the cathode comprises moving the cathode continuously. 56. The method of claim 55, further comprising cooling the movable cathode in and out of the active plasma. 58. The method of claim 57, further comprising providing a structure for slidably supporting the movable cathode in the active plasma, wherein cooling the cathode in the active plasma is provided by the structure. 56. The method of claim 55, wherein the thickness of the target material included in the cathode is sensed outside the active plasma. 56. The method of claim 55, further comprising shielding the active plasma to protect against sputtering means disposed in the vacuum chamber but outside the active plasma. 56. The method of claim 55, wherein the magnetic target material is selected, forms a magnetic field to enhance the active plasma, and wherein a portion of the target material present in the active plasma at a given time is supersaturated by the magnetic field. And selecting the thickness. 56. The method of claim 55, wherein said portion of the movable cathode present in the plasma at a given time is significantly smaller than the other adjacent portions. 14. The device of claim 1,2,3,8,10 or 13, wherein the movable cathode is provided in the form of a flexible ribbon that moves through the active plasma at a predetermined rate. The device as claimed in claim 1, 2, 3, 8 or 10 provided in the form of a rotating drum in which the movable cathode continuously moves through the active plasma at a predetermined rate. The device of claim 1, 2, 3, 8 or 10 provided in the form of a disk in which the movable cathode continuously moves through the active plasma at a predetermined rate. ※ Note: The disclosure is based on the initial application.