FR2509755A1 - APPARATUS AND METHOD FOR HIGH SPEED CATHODIC SPRAY - Google Patents

Abstract

HIGH-SPEED, VACUUM CATHODIC SPRAYING APPARATUS AND METHOD. THE CATHODECIBLE CAN BE PROVIDED AS A RIBBON, ROTATING DRUM OR A DISC MOVING THROUGH ACTIVE PLASMA OR A ROD MOVING INTO THE INTERIOR OF ACTIVE PLASMA AND COOLING OF THE CATHODECIBLE IS IMPROVED. THIS STRUCTURE EXTENDS THE LONGEVITY OF THE CATHODECIBLE, ALLOWING THE APPLICATION OF AN INCREASED CURRENT DENSITY.

Description

The present invention relates to an apparatus and a

  high-speed cathode sputtering method to extend the life of the target O It is applicable to the sputtering of a wide range of materials in cathode-type sputtering apparatuses.

magnetic cement or others.

  With regard to sputtering, target erosion poses a serious problem of limiting the life of the target. Another difficulty lies in the overheating of the target, which can be reduced for example by reducing the power density of the target. the target However, the latter measure reduces the rate of deposition of material In addition, during the sputtering of magnetic materials

  by cathodic sputtering apparatus

  magnetic effect, the target must be

  relatively small to avoid diverting the magnetic field

  These drawbacks limit the performance and efficiency of use of prior art apparatus for cathodic sputtering of materials.

  both magnetic and non-magnetic, because of the frequent

  interruptions in the operation imposed by necessity

to replace the target material.

  Examples of cases where the low speed of spraying

  cathodic resistance obtained with the apparatus according to the

  that existing anterior is particularly troublesome are those in which one operates continuously, for example in the manufacture of tapes for recording and reproduction

  It would therefore be desirable to increase the

  sputtering capacity to increase that of

  magnetic tape manufacturing by this technique.

  Accordingly, it is an object of the present invention to provide: a high speed cathode sputtering apparatus and method for increasing the life of the target;

  a large-scale cathodic sputtering apparatus

  using an improved cooling mobile target.

  to minimize target erosion and increase target performance

  an apparatus and method for sputtering

  only at a high speed with a target advancing continuously with respect to the active plasma, only a relatively weak part of the target being exposed to the plasma at any moment;

  an apparatus and method for sputtering

  as high performance with improved cooling of the target and thus allowing to apply an increased current density to the cathode / target

  an apparatus and method for sputtering

  high performance with a moving target that

  is brought into the plasma confinement zone at a distance of

  determined and is suitable for association with cathodic sputtering systems powered by direct current (C C) or by high frequency (H F), in particular

  cathodic sputtering techniques of reinforcing

Magnetic and other

  an apparatus and method for sputtering

  that at high speed with magnetic reinforcement comprising the implementation of a target of magnetic material with a long life and not likely to divert the magnetic confinement field of the surrounding plasma;

  an apparatus and method for sputtering

  with improved characteristics having the above-mentioned characteristics and suitable for the high-speed deposition of magnetic material on a substrate, for example in order to

  the manufacture of magnetic tape and the like.

  These and other objects of the invention are achieved by an apparatus and method for high speed vacuum sputtering of a target material selected from a substrate, which is remarkable in that Anode and a cathode / moving target according to the invention are arranged in a vacuum chamber. An active plasma is formed between these electrodes. The cathode / moving target is disposed at a distance from the substrate. Means are also provided which move the cathode. target relative to the active plasma so that at any time during the sputtering, part of the cathode / target is disposed within the active plasma while another portion, contiguous, of the cathode / target is disposed outside the active plasma. The above-mentioned purposes, features and advantages of the invention, as well as others, will be apparent in the course of

  description which will now be given, as an example

  Non-limiting embodiments of certain preferred embodiments of the invention with reference to the accompanying drawings, in which: Figure 1 is a simplified schematic view of a cathode sputtering apparatus according to a preferred embodiment of the present invention. Figure 2 is an enlarged detail view corresponding to a portion of Figure 1; Figure 3 is a perspective view corresponding to a portion of Figure 2; Fig. 4 is a sectional view illustrating another embodiment of the portion shown in Fig. 3; FIG. 5 is a magnified detail view similar to FIG. 2, but of another embodiment of the invention;

  FIGS. 6A and 61 are simplified schematic views

  Figs. 7 is an enlarged detail view illustrating yet another preferred embodiment of the invention;

  FIG. 8A is a partial cross-sectional view following

  line 8 A-8 A of Figure 7;

  FIG. 8B is a partial cross-sectional view of ana-

  Figure 8 A illustrating a structural variant

  for the embodiment according to Figure 7.

  We will give, first of all, an overall description

  of the apparatus and method according to the invention with reference

  in Figure 1 and then a more detailed description

  various embodiments illustrated in Figures 2 to 8 B. Figure 1 shows a vacuum chamber 26 surrounded

  by an envelope 21 fixed to a base 3 in a manner

  A vacuum pump 5 and a source 23 of suitable gas, for example argon, are both connected to the chamber 21 A substrate 27, to be spray-coated of a chosen target material, is attached to a base

  25 at a certain distance from a gun barrel assembly.

  The substrate 27 may be fixed or, in a mobile variant, be, for example, a flexible strip made of a suitable plastic material, in a well-known manner, for example, in the manufacture of magnetic strips. moving target 27 in the form of a

  plastic tape, it can be transported along the

  base 28 between two corresponding coils 9 which can

  be protected against unwanted cathodic sputtering

  The sputtering gun assembly 22 includes a cathode 10, made movable in a manner to be further explained in detail, and an anode 8 according to FIG. the nature of the application, the required DC or HF power source (not shown on

  Figure 1 for simplicity) can, instead of feeding

  put into energy the anode 8, be coupled to the set of subs-

  FIG. 27, 28, which then becomes the anode for practical purposes of sputtering, in a manner well known to the technician. An electric field of direction indicated by FIG.

  the arrow 101 is established between the anode 8 and the cathode 10.

  Depending on the nature of the application, the cathode 10 may

  be entirely the target material chosen for spraying

  on the substrate or, alternatively, only a super-

  The cathode 10 may be of the target material, its underlying part may be of a different suitable material. In order to simplify the presentation, it will be used in

  the description which follows the expression cathodeicible to de-

  sign a cathode having one or the other of these possible structures.

  In a particular and important aspect of the pre-

  In this invention, a high energy glow discharge, also known as active plasma, is established between the anode and a cathode, which is movable in the spraying apparatus.

  This last aspect is illustrated in FIG.

  FIG. 1 shows the cathode / target 10, for example, in the form of a moving ribbon conveyed between two supply / winding coils 11, 12 associated With its

  path, the cathode / target ribbon 10 passes

  coaches or guide 33, 34 and a cooled support structure 15 intended to come into contact with the sliver 10 and to guide it sliding in the immediate vicinity

  anode 8 and at a determined distance therefrom, such

  What is required by the nature of the application The appropriate DC or II F voltage source is connected to both the anode 8 and the cathode 10 to provide a glow discharge between these electrodes. Thus, in the zone 4 separating these electrodes, a high-energy, hot plasma is established by means of accelerated particles of a suitable inert gas from the source 23 Whereas, according to the invention, the cathode ribbon 10 moves continuously through the hot plasma 44 , only a relatively small fraction of the

  cathode / target 10 is exposed, at all times, to

  in the plasma In addition to the structure of

  15, additional radiation cooling devices 35 are arranged along the path of the moving cathode 10 outside the plasma zone 4. As a result, it can be seen that compared with the existing cathode / fixed target apparatus, the cooling of the cathode / target ribbon is markedly improved and that the current density and the cathodic sputtering rate of the apparatus according to the invention can therefore be substantially increased without unduly limiting the operating time of the cathode / target ribbon. device Various screens 2, 29 and 43 are provided to avoid spraying outside the area

  desired, as will be discussed later in detail.

  The mobility of the cathode / target represents another improvement over the prior art when cathodic sputtering of magnetic materials by magnetic reinforcement techniques. In particular, the present invention makes it possible to use a

  magnetic target in the form of, for example, a ribbon

  FIG. 2 shows a relatively small thickness, for example approximately 0.025 to 1.27 mm. It is easy to oversatate such a thin target by the plasma confinement magnetic field. to get the concentration and the

  desired setting of the glow discharge and establish

  thus desired sputtering conditions

  Another advantage lies in the possibility of

  ability to choose the speed of the moving target based on

  the density of heat-quenching and the rate of cooling

  possible depending on the nature of the material forming the

  Thus, as the current density increases

  per unit area of the target, the speed of the moving target can be increased accordingly to avoid

  overheating, as will be apparent from a description of the

  more detailed information given below.

  Figure 2 is a simplified representation of the

  FIG. 1 shows a sputtering gun 22 according to the preferred embodiment of the present invention.

  This assembly comprises an internal vacuum chamber

  re 1 surrounded by an external screen 2 which includes

  side kings 2a and above 2b and part of the

  The walls 2b define an opening 2c which may be of circular, rectangular or other convenient shape. The opening 2c constitutes an orifice allowing particles of target material accelerated by the barrel to be deposited on a stationary substrate. mobile 27, as schematized by lines 40 (Figure 1) The substrate 27 is

  placed at the desired distance from the opening 2 c

  2, the base 3 and the envelope 21 are preferably

  non-magnetic conductive material such as stainless steel

  ble or aluminum, and are put to the potential of the mass.

  Consequently, these last elements 2, 3 and 27 must be electrically insulated, by well-known means, from the other elements situated inside the chamber 26 which

  are at high cathode or anode potential

  As indicated above, a vacuum pump 5 is connected to the vacuum chamber 26 via a conduit 4, and a source 23 of suitable inert gas, for example argon, is coupled to the vacuum chamber 1 via a conduit 47. As can be seen better in FIG. 3, inside the vacuum chamber 1 is mounted a fixed anode 8, preferably in the form of two parallel bars, for example made of

  suitable steel type The cathode / target 10 is arranged

  The cathode ribbon 10 is preferably entirely made of a metallic magnetic material, for example 80% cobalt and 20% nickel, and is deposited on a substrate.

  27 (FIG. 1) by sputtering.

  The relatively small (about 0.025 to 1.27 mm) cathode / target 10 is required to achieve the desired supersaturated cathode / target state in the magnetically-enhanced cathodic sputtering apparatus according to US Pat. preferred embodiment However, it should be noted that the

  The present invention is not limited to

  diodes above and that, alternatively, only the active face, that is to say facing the anode, of the cathode can be

  in the target material, in a manner known to the technician.

  The two ends of the ribbon 10 are wound on two respective reversible coils, the delivery / winding 11, 12,

  arranged in the lower end of the vacuum chamber

  1, away from the anode 8 The coils 11, 12 can

  may be driven together, for example by a belt drive 13 having a suitable reversible motor 14 or, alternatively, the coils 11, 12 may be driven separately by means of drive motors.

  separate coil (not shown) In fact, one can use

  use any appropriate drive system.

  Near the anode 8, where the ribbon 10 passes through the hot plasma zone 44, the ribbon 10 is supported by a cooled support structure 15 (FIG. 3) comprising a frame 1 and an upper plate 17, which is contact

  sliding with the ribbon 10 The structure 15 is in a material

  non-magnetic conductor of electricity, eg stainless steel or aluminum Sewer line

  refrigerant 18 is provided inside the heating plate.

  17, for example by piercing adequate passages

  18 through it or, alternatively, it may be

  seen outside the plate 17, but in contact therewith to ensure a very efficient conduction cooling of the ribbon 10. A suitable cooling liquid such as cooled water is circulated through ends 19, 20, in the tubing 18, the various sections of which can be connected by appropriate tubes (not shown). The ends 19 and 20 are preferably

  connected to an external cooling network (not

  felt), in a manner well known to the technician.

  Permanent magnets 30 serve to confine the active plasma in the zone 44 and thereby enhance the spraying

  cathodic, in a manner well known to the technician

  both the apparatus and the sputtering method

  according to the invention are not limited to the case of

  The above-mentioned invention can be implemented with a wide variety of target materials, and is equally applicable to cathode sputtering of known diode, triode and other types.

  especially magnetic materials In the preferred embodiment

  the magnets 30 serving to reinforce the active plasma are in the form of bars of width corresponding to that of the

  ribbon 10 is better seen in Figure 3.

  The magnets 30 are selected to impart the desired configuration to the magnetic field established in the plasma zone 44 as indicated by flow lines 48 and as described, for example, in "Glow Discharge Processes", by Brian Chapman, John Willey and Sounds, New York, 1980, page 268 It can be seen from Figure 2 that the direction of

  flow lines 48 is substantially perpendicular to the di-

  of the electric field designated by the arrow 101 on

  Figures 1 and 2 Thus the arrow 102 indicates the direction

  the magnetic field generated by the magnets 30.

  The moving cathode 10 is coupled to an external high-voltage source DC (C C) or high-frequency (H F) 31, for example by means of a line of

  shielded power transmission 32 conductively connected

  with the supporting structure 15, for example by

  dage. Guide rollers 33, 34 which can be in fact driving rollers and can cooperate with rollers

  pressers 58, 59 indicated in broken lines, are dis-

  each placed on one side of the cooled support structure

  for guiding the cathode ribbon 10 along a determined path

  mined, by making it bear against the upper plate 17 and pass in front of the anode 8 at a desired distance from

  this one, which depends on the nature of the application.

  It is important that the ribbon guiding mechanism which includes the rollers 33, 34, 58, 59 and any other suitable elements (not shown) possibly required to convey the flexible ribbon 10 on a determined path with the required accuracy is designed to hold the ribbon 10 under the necessary tension to prevent it from distorting the

  target surface by twisting, folding or otherwise.

  Additional cooling of the ribbon 10 is preferably provided by cooling devices, for example in the form of radiation cooling plates 35, disposed outside the active plasma zone 44 on one and / or the other sides of the ribbon path, as shown in FIG. 2 These platens 35 may be cooled by a suitable cooled liquid circulating therein through tubes 3 e, 37 respectively connected to an external cooling network (not shown). it is desired to further acknowledge the cooling, additional cooling tubes 38, 39 may be provided inside the rollers 33, 34, in a manner similar to that

  described above in connection with cooling devices

  It is conceivable that the various tubes 19, 20, 36,

  37, 38 and 39 may be connected to one or more

  external cooling units (not shown) located at

  the outside of the envelope 21, in a manner known in the art.

  It goes without saying that the connection tubes, if any,

  necessary for this purpose, as well as links 4, 7,

  32, 47 established between the inside and the outside of a room

  empty, such as 26, shall have

  45 as shown in the drawings.

  A measuring device 41 contained in the thickness of the ribbon 10 and a device 42 for detecting the end of the ribbon 10 may be arranged at one and / or the other end of the ribbon 10. The two devices 41, 42 can

  be of a type without usual contact, for example of the optimal type

  that generally adopted in the recording industry

  magnetic tapes and in similar applications.

  For example, the tape 10 may be perforated or made transparent.

  at both ends held by the coils 11,12.

  When the end of the ribbon approaches device 42, this

  it detects its transparent section and sends a control signal to the drive motor 14 to invert the

  rotation, which reverses the direction of movement of the ribbon

  being the coils 11 and 12 Similarly, the device

  measuring device 41 can provide a control signal when the

  The thickness of the ribbon 10 reaches a pre-set minimum, which

  the need to reconstitute the reserve of target material. In the inner vacuum chamber 1 is preferably provided a grounded protective shield 43 connected to the screen

  2 as shown in FIG. 2 The screen 43 is preferably

  in stainless steel or aluminum and can be used

  as follows to help maintain a different pressure.

  desired between the outer chamber 26 and the inner chamber 1.

  differential by sending in the vacuum chamber int 6 rieu-

  1, with the source 23 connected through an inlet valve 25 inside the inner chamber 1, argon under a determined pressure considerably higher than that of the surrounding chamber 26, Even maintained by the vacuum pump 5 and a control valve 24 which is connected to it for example, it can be established in the chamber 26 a pressure of 13 to 665 x 10 Pa and in the chamber 1 a pressure of 1.35 at 40 Pa As a result, the screen 43 protects the various elements 11, 12, 33, 34, 35, etc., arranged in the inner vacuum chamber 1 but not

  directly in the active plasma zone 44, against a

  undesired deposit of pulverized target material.

  Inside the screen 43 are arranged the anode 8, the portion of the cathode / target mobile ribbon 10 located at a given instant in the active plasma zone 44 and the support and cooling structure 15 which includes the magnets 30 and supports said portion of the ribbon 10 As

  previously mentioned, it is necessary to isolate

  As is well known in the art, all the elements arranged in the envelope 21 can be mounted, for example, by means of well-known techniques.

  screens grounded on isolation media, in

  non-conductive material such as suitable ceramic.

  Therefore, it is necessary, among other things,

  enough of the screen 43, in a well-known manner, the

  ribbon 10 which is at the high electric potential of the catholic

  of, in particular at the openings 46, 50 formed in the screen 43 for the passage of the tape 10 Optionally, there may be a second source of additional argon 6, having a conduit 7 which leads directly to the interior of the area enclosed by the screen 43, as shown in FIG.

figure 2.

  As a variant, instead of using reversing feed / winding reels 11, 12 and inverting the

  movement of the tape at each detection of the end of the

  ban by the device 42, it is possible to foresee the

  ban 10 as an endless band that can be transported

  in a chosen direction for a fixed period of time or until

  than detection by the measuring device 41 of a thick

100 minimum value.

  Reference is now made to Figure 4, which illustrates a

  alternative configuration of the cooling support structure

  die 15 according to FIGS. 2 and 3 In FIG. 4, the plasma

  active 44 is surrounded by a permanent magnet or an electro-

  magnet 51 of substantially U-shaped whose poles op-

  placed south 52 and north 53 are arranged on either side of the plasma 44 and the width of the ribbon 10 The poles 52, 53 generate a magnetic field direction indicated by the

  arrow 102, in the assembly parallel to the plane of the ribbon

  mant cathode / target 10 and therefore perpendicular to the direction

  of the electric field 101 established between the anode 8 and the cathode

  The magnet 51 is attached to a support structure 54,

  electrically conductive and non-magnetic, preferably

  this stainless steel or aluminum, which also serves as a protective screen The flat upper surface 55 of the middle part of the structure 54 supports the moving ribbon 10.

  Tubes 56 for channeling a coolant

  appropriately, such as water, are immediately

  below the upper surface 55 in the immediate vicinity

  diat ribbon 10, so that the cooling of the latter

  the most effective 'A screen 57 surrounds the structure

  support 54, the magnet 51, the anode 8 and a part of the

  cathode / moving target 10 The screen 57 of FIG.

  fundamentally to the inner screen 43 of Figure 2 "and serves to protect against spraying the elements located outside this screen (not shown in Figure 4), and to maintain the differential vacuum as

  previously described with reference to FIG.

  Of course, the support structure configurations

  respectively shown in Figures 3 and 4 does not represent

  feel that two of the many layouts likely to be

  in accordance with the lessons of this invention.

tion.

  We will now describe a preferred method of spraying

  high-speed cathodic method according to the present invention.

  tion with reference to the embodiment of FIGS. 1 and 2.

  Before starting the sputtering, the pump is

  empty 5 running to establish in the room due a low-

  pressure, for example of the order of 1.3 x 10 Pa or less.

  Argon from source 23 is then admitted into

  the inner chamber 1 to establish in it a pres-

  higher than the aforementioned established in the chamber 26 and for example of the order of 3 Pa or more Optionally, an argon supplement can be introduced into the space 44, from the source 6 It goes without saying that the above-mentioned pressure values may vary depending on the nature of the

  the application One starts up one or more of the dis-

  external cooling coils and the coolant, brought back to the desired low temperature,

  is forced through some or all of the tubes

  presented in 19, 20 and 36-39 in Figure 2.

  The motor 14 is also started, which causes the ribbon 10 to move continuously between the coils 11 and 12 along a determined path, which comprises the rollers 33,

  and 59, 34, the cooled plate 17 and the platens

  If the rollers 33, 34 are rollers

  tractors, a corresponding engine (not shown) is

also excited.

* The speed of the ribbon 10 is chosen so as to satisfy

  to the cooling requirements arising from natural

  re of the target material chosen to form the cathode ribbon and to obtain the specific current density required

  the sputtering rate chosen.

  It is estimated that current densities of about 80 watts to 800 watts or more per square centimeter

  cathode / target using the cathodic sputtering gun

  that at high speed according to the present invention For comparison, in existing devices, the density of

  current is limited to approximately 40 W / cm It is estimated that the

  mobile ban 10 must move at a speed of 127 mm / min and

  more to undergo the necessary cooling, according to the

  particularity, size, current density and other characteristics of the ribbon and also

  sputtering and the intended application.

  Once established in the vacuum chamber the conditions necessary for a given sputtering application, among other differential pressures, conditions

  cooling and all other conditions of spraying

  the well-known cathodic connection required, the power source 31 (shown in FIG.

  to supply the cathode 10 and the anode 6 with energy

  In this connection, it is apparent that in the spraying apparatus, there is a glow discharge between these electrodes.

  according to the invention, a glow discharge

  appears in the space 44 between the anode 8 and the part of the cathode / moving target 10 which, at any given moment, is supported by the plate 17 and thus located in the active plasma 44 Whereas the cathode / target 10 moves continuously through the active plasma 44, the reserve mat 6 target riau

  present in the plasma zone is continuously reconstituted.

  From the above description, it follows that we can obtain

  a target cooling rate of the target material by selecting the target ribbon / target speed and other appropriate parameters according to the density 6 of the target material.

  desired current and the material chosen to form the target.

  For example, it is possible to supply the cathode with a DC voltage of -500 V at 4 kV and the anode with DC voltage.

  from + 500 V to + 4 k IV by means of isolated insulated cables

  32, 32 a which is best seen in Figure 3.

  Trat 27 can be maintained at zero potential in a variant, depending on the application, the substrate 27 can be maintained at

  anode potential and suppress the anode 8 accordingly.

  In the latter case, the electrical voltage and the plasma

  tif appear and are both maintained between the

  In the preferred embodiment according to FIG. 2, the cable 32 is connected to the cooled conductive frame 15 and thus to the moving ribbon 10 through the conductive plate 17 of the frame 15. As previously described, for example, using a continuously moving plastic strip, such as "iylar" tape as a substrate 27, it is possible to apply

  the cathode a DC voltage under -2,000 volts and to the

  node a DC voltage under + 2000 volts when the cathode / target ribbon of Figure 2 is made of magnetic material

  as indicated above, it is estimated that it is possible to

  hold a material deposition speed of the order of

  2 x 10 angstroms per minute using the spray gun

  According to the invention, this latter speed is twice as high as that afforded by known sputtering apparatus used in manufacturing

magnetic tapes.

  Thus, because the present invention makes it possible to

  significantly improve the cooling of the cathode / target compared to prior known devices, it allows

  to increase accordingly the current density of the

  thode / target which, in turn, increases the speed of pul-

  In addition, the amount of deposited material and thus the operating time obtained with a given target are significantly increased compared to

  fixed targets, since the cooling and therefore the

  gevity of the target are increased.

  FIG. 5 shows a spray gun assembly

  According to a variant of the invention, the cathode 22 is adapted to facilitate the connection between the various embodiments.

  described in this specification, the elements

  have been changed to the attached figures with the same references

  these digital ones and we will refrain from describing them again.

  In the present embodiment, there is provided a cathode / target

  movable in the form of a hollow drum 60, also called surface

  drum 60, continuously rotating, which replaces the

  10 according to FIG. 2 The variant according to FIG. 5 is particularly indicated, in a nonlimiting manner, for

  applications where the target is made of non-flexible fragile

  or otherwise likely to be endangered

  mechanical damage by fragility, fatigue fracture, etc. when used as a flexible ribbon Examples

  such materials are tungsten, ferrite and

similar fragile and hard

  For example, the drum 60 can be made by casting

  vacuum tungsten or cobalt to obtain a structure

  homogeneous form in the form of a relatively hollow drum

  Thin thickness 100 desired, by techniques well con-

  The drum 60 is supported by a

  In the case of the cooled support structure, similar to the structure previously described with reference to FIGS. 2 and 3, however, the upper plate 62 of the structure 61 has a curvature

  corresponding to that of the buo drum surface

  The present invention provides a better contact with the movable drum surface 60 and thus a better cooling thereof. The cooled support structure 61 slidably supports the rotating drum surface 60 The cooling tubes 8, the magnets 30, the anode 8 and the screen 43 have in FIG. 5 an arrangement similar to that described with respect to the previous embodiment of the sputtering gun assembly 22 according to FIG.

  drum 60 is preferably driven by rollers

  63, 64 which externally flank the screen pro-

  Alternatively, pressure rollers 65, 66, shown in broken lines on the

  Figure 5, to prevent slippage between the rollers

  63, 64 and the drum surface 60

  63, 64 may be driven by a motor con-

  venable (not shown), thereby ensuring the rotation of the drum 60 in a chosen direction indicated by the arrow 69, or

at the opposite.

  In the vicinity of the rotating drum surface 60 are

  arranged fixed cooling trays 67, 68 which

  may be of the radiating type as the trays 35 of Figure 2 The trays 67, 68 are bent to match the

  drum surface 60 to cool it more efficiently.

  It goes without saying that the drum 60 can have any length and diameter suitable, for example both of the order of ten centimeters, depending on the size of the substrate and other appropriate parameters related

  to a particular application of sputtering.

  Figures 6A and 6B are simplified views, of

  above and in straight section respectively, of another

  Invention of the invention More particularly, the set of

  cathode sputtering gun 22 of the latter

  It has a cathode / moving target in the form

  a disc 70 rotating continuously, a thickness 100 de-

  completed and preferably entirely in the selected target material The disc 70 rotates for example under the effect of a shaft 77 coupled to a suitable motor 78 in a known manner for driving a turntable Cooling trays 71 , 72 may be arranged on either side of the disk 70, near a selected portion thereof. Another contiguous portion of the mobile disk 70

  is located near an anode 74 at a distance of

  The latter part of the disk 70 is slidably supported by a support structure

  cooled 73 in contact with the anode 74, preferably

  this circular shape, is similar to the anode 8 according to Figure 5 previously described, while the structure of

  support 73 is similar to structure 61 previously described

  written according to Figure 5, except that it includes a plate

  The flat anode 74 may be of circular section

  Rectangular or rectangular Structure 73-may contain

  magnets (not shown) which generate a magnetic field

  than 102 to strengthen the active plasma 44, as previously

  described in Figure 2 or 5 Energy in

  C.C or HF is applied to the rotating cathode disk.

  70 and at the anode 74 from a power source (not shown) corresponding to the power source 31 of Figure 2 to establish an electric field 101 as described above The cooling plates 71, 72 and the neighboring part of the mobile disk 70 that they cool are

  surrounded by a protective screen to the mass 76

  appears to be shown in Figures 6A and 6B is arranged in

  a vacuum chamber, such as the chamber 26 of Figure 1.

  Other elements necessary for the establishment of conditions

  providing a glow discharge in the zone 44 between the anode 74 and the cathode 70 of the embodiment

  6 A, 6 B, are similar to those previously

  described in Figures 1, 2 and 5.

  According to the illustrated sputtering process

  6A and 6B3, the motor 78 rotates the disc

  that forming cathode / target 70 along arrow 75 to vi-

  determined speed to cool in the

  required by the cooling structure associated with

  73 and also, if necessary, by the cooling trays

  71, 72 As it follows from the description which

  precedes, in the embodiment of FIGS. 6A, 6B, a portion i 8 of the rotating cathode / target disk 70 is located in

  the plasma zone 44 at any time during the operation

  while another, contiguous, part may be cooled

  This results in extremely efficient cooling of the rotating disk thanks to

  this in the preferred embodiment described above of the invention.

  The rotational speed as well as the diameter and thickness of the disk can be selected according to the desired current density, spray rate, target life and other similar considerations.

  and which depend, of course, on the necessary cooling

  The estimated superficial velocity of the disk 70 is, in

  most applications, greater than 127 mm / min.

  The embodiment of FIGS. 6A, 6B is particularly

  indicated, in a non-restrictive way, for association with a

  The disc 70 can be made of, for example, cobalt tungsten and cobalt by vacuum casting, in a manner

well known technician.

  For example, the disk 70 may have a diameter of about ten centimeters or more and rotate at a speed of about 1 to 300 rpm, with application to

  disk with a voltage of 500 V at 4 kV and obtaining a

  deposition rate exceeding 2 x 10 A per minute.

  As conceived by the technician, in the various

  embodiments of the invention described above, it is possible to

  the anodes, substrates and / or screens of cold structures

  dies, by means well known to the technician.

  Although, as described by way of example, the various embodiments according to FIGS. 2 to 6 B use

  cathodic sputtering techniques with

  Of genetics, of a type well known in the art, it goes without saying that these embodiments of the invention, as well as others, can be used also in other types of apparatus.

  For example, instead of structural

  magnetic structures of Figures 3 and 4, it is possible to

  To enhance the sputtering, an additional anode in combination with a hot filament is added in a manner well known from the spraying apparatus.

cathode triodes existing.

  -It follows from the description given above about

  1 and 2 that, when the material of the drum 60 according to FIG. 5 or the disc 70 according to FIGS. 6A, 6B is magnetic, it is desirable for these targets to have a small thickness, for example of the order of 0.025 to 1.3 mm,

  to obtain a desirable supersaturation.

  Another achievement yet of gun set of

  sputtering 22 according to the invention is

  Figure 7 and Figures 8A and 8B, each of which

  this represents a possible configuration in straight section

  along line 8 A-8 A which corresponds to plane 80 of the

  The cathode sputtering gun assembly 22 according to FIG. 7 comprises an anode 81 and a rod-shaped cathode / moving target 82 arranged so that its longitudinal axis 83 is substantially perpendicular to the plane.

  The bisector 80 of the anode 81 The cathode 82 is preferably

  it is made of a magnetic material forming an electromagnet by virtue of a winding 99 shown in FIG. 7. The upper pole, preferably the south pole, 84 of the cathode 82 is arranged so that its wafer 105 is located nearby and at a distance determined from the anode 81, while

  the North Pole 95 is formed by the opposite end, inferior

re, of the bar 82.

  In the embodiment according to FIG. 7, the south pole 84 is part of the magnetic circuit serving to reinforce the

  sputtering Another part of the magnetic circuit

  This variant is formed by a magnet 86, as shown in FIG. 8A. In a variant, it may be a series of U-shaped magnets 86a as shown in FIG. 8B. The U-shaped magnet 86 or the U-magnets 86a surround the anode 81 and the pole 84 of the cathode 82 The magnet 86 or the magnets 86a are magnetized so that the or each south pole 89 is located on the side of the anode 81 near the south pole 84 of the mobile cathode 82 and that the or each north pole 90 is located from

opposite side of the anode 81.

  The cathode 82 may be made of a magnetic target material

  or in suitable magnetic alloys, for example comprising cobalt, iron, nickel, chromium, etc. Alternatively, the cathode 82 may be of a non-magnetic target material, for example copper, aluminum, etc. or alloys However, in the latter case, it is necessary to provide magnets 86

  such as to obtain an even more

  tense, having a magnetic flux 96 of desired intensity

  along direction 106 substantially parallel to the axis

  83, as previously described. The bar 82 can, for example,

  have a diameter chosen between 3.2 mm and ten

  centimeters and a length of the order of ten cen-

  timers A screen 87, for example stainless steel or

  aluminum, is arranged in the space between the electro-

  81, 82 on the one hand and the magnet 86 or the magnets 86 a

  on the other hand, to avoid a deposit on the magnet or

  The screen 87 is preferably grounded and

  can be optionally cooled.

  The magnetic circuit according to FIG. 7 is provided so that the flux path 96 is substantially parallel to the axis 83, in order to obtain a maximum magnetic field intensity in the plasma zone 44 following the

direction of arrow 106.

  A bar advance mechanism 91 advances the bar 82 in the direction of the arrow 92.

  for example a rack and pinion mechanism, or a disc

  positive positive screw or other well known It can be controlled manually or, alternatively, by a suitable motor 92 which are connected to appropriate control devices not shown The bar 82 is preferably supported at

  sliding by an insulating sleeve 93, for example in

  heat-resistant material such as ceramic material

  The sleeve 93 may also possibly be made

  in the form of a cooling device and, in this case, it can circulate a coolant therein

  adequate (not shown) as described in the preceding

achievements.

  A power source 31 can be connected to the end

  of the bar 82 by a shielded energy transmission cable.

  32, in a similar manner to that previously described.

  We will refrain from describing here, to avoid repetition, other elements of Figure 7 that are similar to those

  preferred embodiments previously described.

  The cathode sputtering method according to the embodiment according to FIGS. 8, 8 A and 8 B will now be described. Once the conditions necessary for sputtering in the vacuum chamber 26 of FIG. 1 have been established, a glow discharge is produced. , also known as active plasma, in the zone 44 between the anode 81 and the wafer 105 of the upper section 84 of the cathode / target bar 82 As the gradual erosion undergone by

  the face 105 of the cathode 82 due to the progress of the pulp

  cathodic verification, the mechanism 91 advances the

  thode 82 in active plasma 44 according to arrow 92.

  The embodiment according to FIGS. 7, 8 A, 8 B makes it possible

  keep in the active plasma zone 44 a high intensity magnetic field, for example of the order of 2000 gauss and more. There is a clear advantage that only the slice region of the cathode 82 is eroded in the plasma. 44 at any time while another contiguous portion is located outside the active plasma area. Another important advantage is that the aforementioned eroded portion of the cathode 82

  is replaced continuously in advance from the bar 82 towards the

  The embodiment according to FIGS. 7, 8 A, 8 B is particularly suitable for target materials susceptible to mechanical damage, for example

  fragility, fatigue rupture, etc. when they suffer

  bending, flaming, etc., which occurs when

  that the cathode is made, for example, in the form of

  ribbon as previously described with reference to FIG.

  In the embodiment of FIGS. 7, 8 A and 8 B, the apparatus

  and the process are similar to those of the previous embodiments.

  described in that using a cathode / target 82

  mobile compared to the active plasma 44, which ensures the replacement

  continuous placement of the consumed target material However,

  the last achievement differs from those previously de-

  written in that the cathode 82, when it is made of magnetic material, is not supersaturated by the magnetic field and

  constitutes an active part of the magnetic structure, serving

  The terminal portion 84 of the bar 82, located in the active plasma, is at an elevated temperature and its cooling is not provided in the preferred embodiment. The bar 82 is preferably cooled in an external part. at the zone of

plasma.

  Another difference with the previously described embodiments is that the cathode bar 82 of FIGS. 7, 8 A, 8 B is not intended to pass through the active plasma 44, but to enter the plasma and undergo erosion therein.

gradual.

  An advantage of FIG. 7 lies in the fact that a very high intensity of magnetic flux per unit area of the cross-section of the upper end 84 of the

  bar 82, which makes appear an external magnetic field

  very concentrated in the active plasma zone 44.

  In general, the provisions described are

  various modifications without departing, for

framework of the invention.

Claims (49)

  1 Apparatus for cathodic sputter deposition   high speed, under vacuum, of a target material on a substrate   characterized in that it comprises: a) a vacuum chamber (26) having an anode (8, 74, 81), a cathode (10, 60, 70, 82) and means (31, 32) for establishing an active plasma between anode and cathode b) said cathode being movable in said vacuum chamber and disposed at a distance from said substrate (27), said cathode comprising said selected target material; and c) means (11-14, 63, 64; 91) adapted to move said cathode relative to said active plasma so that a portion of the cathode is located in the active plasma while another portion, contiguous , the cathode is located at the outside of the active plasma.   Apparatus according to claim 1, characterized in that   what said means for moving the cathode are   seen as continuously moving means and in that said part of the moving cathode located at any time in the active plasma is smaller than said other part contiguous cathode.   Apparatus according to claim 1, characterized in that   in addition to including a cooling means   placed in the immediate vicinity of the moving cathode.   Apparatus according to claim 3, characterized in that said active plasma establishing means comprises means (31,32) for establishing an electric field between the anode and the cathode; in that the moving cathode is disposed in the active plasma so that its thickness (100) extends in a substantially parallel direction   to that (101) of said electric field; and that the   thode is movable relative to said active plasma in a direction substantially perpendicular to that of said electric field.   Apparatus according to claim 4, wherein the cathode is   bile comprises a magnetic target material, characterized in that the apparatus further comprises: means (30) adapted to establish a magnetic field in a direction (102) 2509755-   substantially perpendicular to that (101) of said elec-   to enhance said active plasma; and in that part of said target material located in the active plasma is   supersaturated by said magnetic field.   Apparatus according to claim 5, characterized in that   what said thickness (100) of said target material   door cathode is small in relation to the length and the width of it.   Apparatus according to claim 3, characterized in that said cooling means comprises a first   cooling means (18) disposed in the im-   mediate of said movable cathode portion which is located at   a given moment in the active plasma.   An apparatus according to claim 7, characterized in that it further comprises a support structure (15; 61; 93) for slidingly supporting the portion of the moving cathode located at a given instant in the active plasma, and in that that said first cooling means (18) is   disposed in this support structure.   Apparatus according to claim 7, characterized in that said first cooling means (18) is provided   in the form of conduction cooling means.   An apparatus according to claim 3, characterized in that said cooling means comprises a second cooling means (35; 67,68; 71,72) disposed in the immediate vicinity of said other contiguous portion of the   mobile cathode located at all times out of the active plasma.   Apparatus according to claim 10, characterized in that said second cooling means is provided under   form of radiation cooling means.   Apparatus according to claim 10, characterized by further comprising screen means (43-; 57; 76) for separating active displacement means from said active plasma.   cathode and said second cooling means.   Apparatus according to claim 1, characterized in that said cathode comprises a terminal section and in that   that means (42) are provided for reversing the direction of movement.   of the cathode when the cathode portion disposed in -G 9? 55   the active plasma is at a determined distance from said terminal section. Apparatus according to claim 13, characterized in that it further comprises means (41) for monitoring the thickness (100) of the moving cathode, said monitoring means being disposed along the path described by the cathode   mobile outside the active plasma.   Apparatus according to claim 1, characterized in that the cathode is provided in the form of a bar (82) of said target material and arranged to be movable in the direction of its longitudinal axis (83); in that a first end (84) of said bar is disposed in said active plasma while another contiguous portion of said bar having the opposite second end (95) thereof is disposed out of the plasma; and in that said means (91) for moving the cathode is provided to advance said bar in the active plasma; said apparatus further comprising means (86; 86 a) for generating a field   magnetic sensor transverse to said active plasma and said first   end of said bar arranged in this next plasma   a direction (106) substantially parallel to said longitudinal axis dinal of the bar.   Apparatus according to claim 15, characterized in that   said bar is provided in the form of a magnet comprising   as a first polarity magnetic pole chosen formed   by its aforesaid first end (84) and a second magnetic pole   opposed polarity gnetic formed by said second end (95), and in that said magnetic field setting means (86; 86 a) is arranged to present a pole   same polarity as said first magnetic pole   that said Bar in the immediate vicinity of the latter   to increase the intensity of said magnetic field which   pours the active plasma and said first magnetic pole of the bar.   Apparatus according to claim 15 or 16, characterized   it further comprises means (93) for slidably supporting said contiguous portion of the outer bar active plasma.   Apparatus according to claim 17, characterized in that said sliding support means (93) is provided   in the form of cooling means.   19 Apparatus according to claim 15, characterized in that it further comprises screen means (87) interposed   between the active plasma of the organs arranged in said chamber   empty (1> but out of active plasma to protect these bodies against spraying.   Apparatus for large-speed sputtering, under vacuum, of a selected target material, characterized in that it comprises a vacuum chamber (26) having an anode (8; 74), a movable cathode (60; 70) having said   chosen target material and means (31,32) for the establishment   conditions necessary to obtain an active plasma between said anode and a portion of said moving cathode located at any time, close to the anode; means (11-14, 63, 64) for continuously moving said cathode so that one of its parts is located in said plasma   while another of its contiguous parts is   killed at a given time out of the active plasma; a cooled support structure (15; 61) slidably supporting said portion of the moving cathode located in the active plasma; and additional cooling means (35; 67,68; 71,72)   located in the immediate vicinity of the journey described by   the active plasma external mobile cathode part for   to cool this other part of the catholic   of. Apparatus according to claim 20, characterized in that   said moving cathode has a relative thickness (100)   low in relation to its length and width.   22 Apparatus for large cathode sputtering   velocity, under vacuum, of a magnetic target material, characterized   in that it comprises: a vacuum chamber (26) comprising   an anode (8), a movable cathode (10) having said magnetic target material and means for establishing the conditions necessary for establishing a plasma   between said anode and a portion of said cathode   bile disposed at any time in the vicinity of said anode, said vacuum chamber further comprising means (31,32) adapted to establish a magnetic field to strengthen said active plasma; means (11, 14, 61, 64) moving continuously   said moving cathode for one of its parts to be dis-   placed in said active plasma while another of its   parts, contiguous, is situated at any time outside the said   my; a cooled support structure (15, 61) for supporting   sliding said movable cathode portion (10)   killed in active plasma; and cooling means   (35,67,68,71,72) located on the route and on the   immediate sinus of the mobile cathode outside the plas-   my asset for cooling said other contiguous portion of the cathode; the moving cathode having a thickness chosen to obtain the supersaturation of the magnetic target material in the part of the moving cathode situated at all times in active plasma.   Apparatus according to claim 20 or 22, characterized   characterized in that it further comprises screen means (87) for separating active cathode displacement means from said active plasma and said additional cooling means.   Apparatus according to claim 20 or 22, characterized   in that it further comprises means (41) for   continuously monitor the thickness (100) of the moving cathode, this monitoring means being arranged along the path of   the moving cathode outside the active plasma.   Apparatus for sputtering high-speed, under vacuum of a selected target material, characterized in that it comprises a vacuum chamber (26) having a   anode (8), a cathode (10) and a means (31,32) for   the conditions necessary for the appearance of an active plasma between said anode and said cathode, said   cathode comprising said selected target material and being pre-   view in the form of a flexible ribbon; means (15) for supporting   a portion of said moving ribbon in said active plasma at   a determined distance from said anode; a means of storing   kage (11,12) to store another, contiguous, portion of said   ribbon, exterior to said active plasma; and means (14) for moving said ribbon between said storage means and said   support means, through said active plasma.   Apparatus according to claim 25, characterized in that it further comprises a first cooling means (18) provided in said support means (15). Apparatus according to claim 25, characterized in that it further comprises a second cooling means (35) disposed outside said plasma and in the path described by said ribbon between said support means and said storage medium.   Apparatus for cathodic spraying At high speed, under vacuum, a target target material characterized in that it comprises a vacuum chamber (26) having an anode (8), a movable cathode (10) ) and means (31,32) for establishing the N conditions necessary for the appearance of an active plasma between a portion of said moving cathode and said anode, said cathode comprising a material chosen and being provided. in the form of a flexible ribbon; N cooled support means (15) located at a determined distance from the anode for slidably supporting said portion of the   cathode which passes at a given moment 6 Through the plasma   tif; two corresponding coils (11,12) respectively fixed at opposite ends 6 of said ribbon for storing a contiguous portion of the ribbon outside the active plasma and means (33,34) for passing the ribbon between said coils corresponding and above said means of cooled stand.   29 Apparatus according to claim 28, characterized in that it further comprises a cooling means (35) arranged on the path of the ribbon in the neighborhood imm Adiat of   ribbon and outside the active plasma.   An apparatus according to claim 28, characterized in that it further comprises means (42) disposed along the ribbon path outside the active plasma to detect an extrusion of the ribbon and provide a control signal so as to   to reverse-the direction of movement of the ribbon.   Apparatus according to claim 28, characterized in that it further comprises means (41) for monitoring 25097 '55   the thickness (100) of said tape, this monitoring means   being arranged on the ribbon path outside the plastics my assets.   Apparatus according to claim 28, characterized in that it comprises screen means (43) disposed between the active plasma and other associated means arranged in the   vacuum chamber but outside the active plasma for   to protect these other means against sputtering.   Apparatus for high speed sputtering, under vacuum, of a selected target material, characterized in that it comprises: a vacuum chamber (26) having an anode (8), a movable cathode (60) and a average (31,32)   to establish the necessary conditions for the   an active plasma between anode and cathode, said cathode   being provided as a rotating drum surface comprising said selected target material; support means (61) disposed at a predetermined distance from said anode for slidably supporting a portion of said rotating drum surface in the active plasma while another portion contiguous to said drum surface is at any time outside of active plasma; and means (63,64)   to rotate the drum surface at a desired speed   completed. 34 Apparatus according to claim 33, characterized in that it further comprises a first cooling means   (18) provided in said support means.   Apparatus according to claim 33, characterized in that it further comprises a second cooling means   (67,68) disposed in the immediate vicinity of said surface   this rotary drum outside active plasma.   Apparatus according to claim 35, characterized in that   what it still comprises screen means (43) for separating   depositing active plasma said means rotating the surface   drum and said second cooling means.   Apparatus according to claim 33, characterized in that it further comprises means (41) for monitoring in   the thickness (100) of said rotating drum surface   tif, this monitoring means being disposed along the path of said rotating drum surface to the outside active plasma.   Apparatus according to claim 33, characterized in that said rotary drum surface is arranged so that its longitudinal axis extends in a direction   substantially perpendicular to that (101) of an electric field   formed between said anode and said tamper rotational bur.   Apparatus for high speed vacuum sputtering of a selected target material, characterized in that it comprises a vacuum chamber (26) having a   anode (74), a cathode (70) and a means (31,32) for   establishment of the conditions necessary for the appearance of an active plasma between anode and cathode, said cathode being   provided in the form of a rotating disc comprising said material   target chosen; support means (73) disposed at a   determined distance from adite anode to support sliding   a portion of said rotating disc within the active plasma, while another contiguous portion of said disc is at all times external to the active plasma, and means (78) for rotating said disc at a determined speed. Apparatus according to claim 39, characterized in that it further comprises a first cooling means   provided in said support means (73).   41 Apparatus according to claim 39, characterized in that it further comprises a second cooling means   (71,72) disposed in the immediate vicinity of said rotational disk   outside the active plasma.   Apparatus according to claim 40, characterized in that it further comprises screen means for separating active disk and said disk rotating means from said active plasma. second cooling means.   43 Apparatus according to claim 39, characterized in that it further comprises means (41) for the continuous monitoring of the thickness (100) of said rotary disc, this monitoring means being disposed on the path of said disc   rotating outside the active plasma.   An apparatus according to claim 39, characterized in that said rotating disc is arranged to have a planar surface extending in a direction substantially perpendicular to that (101) of an electric field established between said anode and said rotating disc.   Apparatus according to one of claims 25, 33 or 39,   characterized in that said cathode comprises a magnetic target material, the apparatus further comprising a means for establishing a magnetic field for reinforcing said active plasma and in that the moving cathode is   thickness (100) chosen small compared to its other di-   mensions to obtain a supersaturation of the target material in active plasma.   46 Large cathode sputtering apparatus   vacuum-type of a selected target material, characterized in that it comprises: a vacuum chamber comprising an anode (8), a cathode (82) and a means for establishing the conditions necessary for the appearance active plasma   between these electrodes, said cathode comprising said material   target and being provided in the form of a bar, this bar   being movable along its longitudinal axis (83), a first   end (84) of said bar being disposed in the plastics   my asset while another contiguous portion of said bar having the opposite second end (95) thereof is disposed out of said plasma, and means (91) for   advancing said bar inwardly of said active plasma.   Apparatus according to claim 46, characterized in that it further comprises means (86, 86 a) for establishing a magnetic field to enhance the active plasma, which magnetic field is arranged to pass through said active plasma and said first end of said bar, disposed in the latter, in a direction (106) substantially   parallel to said longitudinal axis (83) of the bar.   48 Apparatus for high-speed vacuum sputtering of a selected magnetic target material   characterized in that it comprises: a vacuum chamber   carrying an anode and a movable cathode and means for establishing the conditions necessary for the appearance of active plasma between said anode and said cathode; the   said moving cathode comprising said magnetic target material   and provided in the form of a magnetic bar (82), said magnetic bar being movable in the direction (106) of its longitudinal axis (83); a first end (84) of said magnetic bar being disposed in said active plasma   and forming a first magnetic pole of determined polarity   born, while another portion, contiguous, of said bar, having the opposite second end (95) of the latter   and constituting a second magnetic pole of opposite polarity   is located outside the active plasma; means (86, 86 a) for establishing a magnetic field traversing the active plasma and said first magnetic pole of the magnetized bar in a substantially parallel direction (106)   longitudinal axis of the Bar, the said means of establishing   of said magnetic field having a magnetic pole   same polarity as said first magnetic pole of the bar-   water and being disposed in the immediate vicinity of this   deny; and means for advancing said bar towards inside the active plasma.   Apparatus according to claim 46 or 48, characterized   in that it still includes a means (93) for supporting   to slide said contiguous part of the outer bar than active plasma.   Apparatus according to claim 49, characterized in that said sliding support means is provided under form of cooling means.   Apparatus according to claim 46 or 48, characterized   in that it further comprises screen means (87) arranged between the active plasma and other associated means,   located outside the active plasma, to protect these   very much against sputtering.   Apparatus for high-speed sputtering, under vacuum, of a magnetic target material selected from a moving non-magnetic oblong substrate, characterized in that it comprises: a vacuum chamber having an anode and a movable cathode and a means for establishing the conditions necessary for the appearance of an active plasma between said anode and a portion of said cathode which is located at any time in the immediate vicinity of said   anode, said moving cathode being made of said material   selected target in the form of a continuous moving ribbon (10), a rotating drum surface (60) or a rotating disk (70)   respectively; means for generating a magnetic field   than to enhance said active plasma; means for moving said cathode through the active plasma so that one of its portions is disposed in the active plasma while another contiguous portion of said moving cathode is disposed outside the active plasma; said   mobile cathode having a thickness (100) chosen to obtain   denaturing the supersaturation by said magnetic field of said moving cathode portion at a given moment in the active plasma; first cooling means (18)   to slidably support part of the cathode   bile-in active plasma; and a second cooling means   (67,68,71,72) disposed in the immediate vicinity of the moving cathode on the path thereof outwardly active plasma.   Apparatus according to claim 52, characterized in that it comprises screen means (76) for separating the active plasma from said cathode displacement means and   said second cooling means.   Apparatus according to claim 52, characterized in that it further comprises means (41) for monitoring the thickness of the moving cathode, said monitoring means being disposed along the path of the moving cathode to the outside of the active plasma.   A vacuum cathode sputtering method of a selected target material on a substrate, characterized by the steps of: providing an anode and a cathode in a vacuum chamber and establishing the conditions necessary for the appearance of a plasma between them active, said cathode comprising said selected target material; arrange the cathode so that it is mobile in   said vacuum chamber at a distance from said subs-   trat; and moving the cathode relative to the active plasma so that it has a part located in this active plasma and another portion, contiguous outside the active plasma. Process according to claim 55, characterized in   what said displacement operation of the cathode com-   carries a continuous displacement operation of the cathode.   Process according to claim 55, characterized in that it comprises cooling operations of the   cathode mobile both inside and outside the plas- my assets.   Method according to claim 57, characterized in that it further comprises the step of providing a structure for slidingly supporting said moving cathode in the active plasma, and in that said operation   cooling of the moving cathode in the plasma   tif is performed by said structure.   Method according to claim 55, characterized in that the target material thickness constituting said   cathode is monitored outside the active plasma.   6 O.Procédé according to claim 55, characterized in that it further comprises a screen separation operation between the active plasma and means arranged in the vacuum chamber, but outside the active plasma, in order   the protection of these means against the spraying of   methodical. The method of claim 55, wherein a magnetic target material is selected, further characterized by the steps of establishing a magnetic field to enhance the active plasma and selecting the thickness of the moving cathode such as the target material portion contained in it which is located at a given moment in   the active plasma is supersaturated by said magnetic field.   The method of claim 55, characterized in that said part of the moving cathode which is located at a given moment in the active plasma is substantially smaller than said other contiguous part of the moving cathode. Apparatus according to claim 1, 2, 3, 8, 10 or 13, characterized in that the moving cathode is provided in the form of a flexible ribbon (10) moving through the active plasma at a determined speed. Apparatus according to claim 1, 2, 3, 8 or 10, characterized in that the moving cathode is provided as a rotating drum (60) continuously moving at   through active plasma at a determined rate.   Apparatus according to claim 1, 2, 3, 8 or 10, characterized in that the moving cathode is provided as a disc (70) continuously moving through the   active plasma at a determined speed.