DE2707144A1 - Cathode sputtering device with magnetic equipment - which can be displaced to move the area of sputtering over an extended surface by relative movement - Google Patents

Cathode sputtering device with magnetic equipment - which can be displaced to move the area of sputtering over an extended surface by relative movement

Info

Publication number
DE2707144A1
DE2707144A1 DE19772707144 DE2707144A DE2707144A1 DE 2707144 A1 DE2707144 A1 DE 2707144A1 DE 19772707144 DE19772707144 DE 19772707144 DE 2707144 A DE2707144 A DE 2707144A DE 2707144 A1 DE2707144 A1 DE 2707144A1
Authority
DE
Grant status
Application
Patent type
Prior art keywords
sputtered
cathode
surface
area
relative movement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19772707144
Other languages
German (de)
Inventor
John F Corbani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sloan Technology Corp
Original Assignee
Sloan Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering

Abstract

Cathode sputtering device with a cathode having a surface to be sputtered and magnetic equipment near the cathode and the opposite side to the sputtered side for formation of lines of force, at least some of which enter and leave the surface to be sputtered. The lines form arc-shaped segments between intersection points at a distance from the sputtered surface, forming a closed tunnel-shaped region over a defined path on the surface in which charged particles are confined; an anode is provided near the cathode and a source of electrical potential, and at least the cathode is in an evacuable vessel. Equipment is provided for relative movement of the magnetic field and the surface to be sputtered, while maintaining their proximity, over an area of the sputtered surface greater than the area at rest. The device extends the scope of materials that can be sputtered and increases target life.
DE19772707144 1976-02-19 1977-02-18 Cathode sputtering device with magnetic equipment - which can be displaced to move the area of sputtering over an extended surface by relative movement Pending DE2707144A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US65927076 true 1976-02-19 1976-02-19

Publications (1)

Publication Number Publication Date
DE2707144A1 true true DE2707144A1 (en) 1977-08-25

Family

ID=24644747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772707144 Pending DE2707144A1 (en) 1976-02-19 1977-02-18 Cathode sputtering device with magnetic equipment - which can be displaced to move the area of sputtering over an extended surface by relative movement

Country Status (2)

Country Link
JP (1) JPS537586A (en)
DE (1) DE2707144A1 (en)

Cited By (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2920780A1 (en) * 1978-08-21 1980-03-06 Vac Tec Syst Sputtering with magnetic enhancement
DE3004546A1 (en) * 1979-02-19 1980-08-21 Hiradastech Ipari Kutato Penning sputter source
US4265729A (en) * 1978-09-27 1981-05-05 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device
US4309266A (en) * 1980-07-18 1982-01-05 Murata Manufacturing Co., Ltd. Magnetron sputtering apparatus
DE3030329A1 (en) * 1980-08-11 1982-02-25 Heraeus Gmbh W C Supported target for cathodic sputtering - comprises target shrink fitted into metal carrier
FR2496126A1 (en) * 1980-12-13 1982-06-18 Leybold Heraeus Gmbh & Co Kg cathode means and method of
WO1982002725A1 (en) * 1981-02-12 1982-08-19 Glass Corp Shatterproof Magnetron cathode sputtering apparatus
DE3212679A1 (en) * 1981-04-07 1982-11-11 Paul R Fournier Improved integrated sputtering arrangement and process
US4394236A (en) * 1982-02-16 1983-07-19 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4407713A (en) * 1980-08-08 1983-10-04 Battelle Development Corporation Cylindrical magnetron sputtering cathode and apparatus
DE3223245A1 (en) * 1982-07-23 1983-12-22 Ulvac Corp Ferromagnetic high speed sputter device
DE3331245A1 (en) * 1982-09-03 1984-03-08 Gartek Systems Inc Level magnetron sputtering
EP0105407A2 (en) * 1982-09-30 1984-04-18 GTE Products Corporation A sputtering cathode apparatus
DE3248121A1 (en) * 1982-12-24 1984-06-28 Leybold Heraeus Gmbh & Co Kg High-cathode assembly for the generation of multiple layers
DE3429988A1 (en) * 1983-12-05 1985-06-13 Leybold Heraeus Gmbh & Co Kg Magnetron cathode for sputtering ferromagnetic targets
EP0154078A2 (en) * 1984-02-03 1985-09-11 Kabushiki Kaisha Toshiba Plasma treatment apparatus
US4552639A (en) * 1984-07-20 1985-11-12 Varian Associates, Inc. Magnetron sputter etching system
EP0169532A2 (en) * 1984-07-25 1986-01-29 Kabushiki Kaisha Tokuda Seisakusho Magnet driving method and device for same
EP0213922A2 (en) * 1985-08-26 1987-03-11 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
EP0242826A2 (en) * 1986-04-17 1987-10-28 dos Santos Pereira Ribeiro, Carlos Antonio, Dipl.-Ing. Cathode for magnetron sputtering
DE3619194A1 (en) * 1986-06-06 1987-12-10 Leybold Heraeus Gmbh & Co Kg Magnetron sputtering cathode for vacuum-coating systems
US4761219A (en) * 1987-01-23 1988-08-02 Anelva Corporation Magnetron sputtering etching apparatus
DE3801205C1 (en) * 1988-01-18 1989-03-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Device for ion etching of substrates with the support of a magnetic field
EP0335526A2 (en) * 1988-03-31 1989-10-04 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
US4872964A (en) * 1985-08-02 1989-10-10 Fujitsu Limited Planar magnetron sputtering apparatus and its magnetic source
EP0173583B1 (en) * 1984-08-31 1990-12-19 Anelva Corporation Discharge apparatus
DE3929695A1 (en) * 1989-09-07 1991-03-14 Leybold Ag An apparatus for coating a substrate
DE4039101A1 (en) * 1990-12-07 1992-06-11 Leybold Ag Fixed magnetron sputtering cathode for vacuum coating systems
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US5164063A (en) * 1991-08-27 1992-11-17 Leybold Aktiengesellschaft Sputtering cathode arrangement according to the magnetron principle for coating a flat annular surface
US5167789A (en) * 1991-03-20 1992-12-01 Leybold Aktiengesellschaft Apparatus for coating a substrate
US5242566A (en) * 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
US5262030A (en) * 1992-01-15 1993-11-16 Alum Rock Technology Magnetron sputtering cathode with electrically variable source size and location for coating multiple substrates
US5284564A (en) * 1991-07-30 1994-02-08 Leybold Aktiengesellschaft Magnetron sputtering cathode for vacuum coating apparatus
US5320728A (en) * 1990-03-30 1994-06-14 Applied Materials, Inc. Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity
US5328585A (en) * 1992-12-11 1994-07-12 Photran Corporation Linear planar-magnetron sputtering apparatus with reciprocating magnet-array
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device
US5427665A (en) * 1990-07-11 1995-06-27 Leybold Aktiengesellschaft Process and apparatus for reactive coating of a substrate
US5538609A (en) * 1994-07-23 1996-07-23 Leybold Aktiengesellschaft Cathodic sputtering system
DE19610253A1 (en) * 1996-03-15 1997-10-09 Fraunhofer Ges Forschung Sputtering apparatus for coating glass, packaging material, tools etc.
EP0805880A1 (en) * 1995-01-12 1997-11-12 The Boc Group, Inc. Rotatable magnetron with curved or segmented end magnets
US5688388A (en) * 1995-08-17 1997-11-18 Balzers Und Leybold Deutschland Holding Ag Apparatus for coating a substrate
US5833815A (en) * 1996-04-24 1998-11-10 Anelva Corporation Sputter deposition system
US5855744A (en) * 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
US5968328A (en) * 1996-12-11 1999-10-19 Leybold Systems Gmbh Device for sputter deposition of thin layers on flat substrates
US6132565A (en) * 1999-10-01 2000-10-17 Taiwan Semiconductor Manufacturing Company, Ltd Magnetron assembly equipped with traversing magnets and method of using
US6464841B1 (en) * 1997-03-04 2002-10-15 Tokyo Electron Limited Cathode having variable magnet configuration
US6960284B2 (en) * 1997-05-08 2005-11-01 Applied Materials, Inc. Rotational and reciprocal radial movement of a sputtering magnetron
WO2006063484A1 (en) 2004-12-17 2006-06-22 Unaxis Balzers Aktiengesellschaft Magnetron sputtering apparatus
WO2006132806A2 (en) * 2005-06-06 2006-12-14 Applied Materials, Inc. Multiple scanning magnetrons
WO2007015933A2 (en) * 2005-07-25 2007-02-08 Applied Material, Inc. Method and apparatus for sputtering onto large flat panels
US7335282B2 (en) * 1999-02-12 2008-02-26 Jianming Fu Sputtering using an unbalanced magnetron
US7513982B2 (en) 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
DE102009007156A1 (en) 2008-01-31 2009-08-06 Von Ardenne Anlagentechnik Gmbh Magnetron sputtering assembly has a ceramic cruciform electrical separator between magnetic system and drive
US7628899B2 (en) 2005-09-07 2009-12-08 Applied Materials, Inc. Apparatus and method of positioning a multizone magnetron assembly
US7682495B2 (en) * 2005-04-14 2010-03-23 Tango Systems, Inc. Oscillating magnet in sputtering system
US7744730B2 (en) * 2005-04-14 2010-06-29 Tango Systems, Inc. Rotating pallet in sputtering system
US8273221B2 (en) 2005-12-13 2012-09-25 Oerlikon Solar Ag, Trubbach Sputter target utilization
US8668816B2 (en) 1999-10-08 2014-03-11 Applied Materials Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US9062372B2 (en) * 2002-08-01 2015-06-23 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564148B2 (en) * 1977-04-26 1981-01-28
JPS629669B2 (en) * 1977-06-23 1987-03-02 Ulvac Corp
JPS56155533A (en) * 1980-05-02 1981-12-01 Tohoku Metal Ind Ltd Plasma apparatus
JPS56161644A (en) * 1980-05-16 1981-12-12 Fujitsu Ltd Dry etching method
JPS57159026A (en) * 1981-03-27 1982-10-01 Toshiba Corp Dry etching method
GB2101638B (en) * 1981-07-16 1985-07-24 Ampex Moveable cathodes/targets for high rate sputtering system
JPS5825236A (en) * 1981-08-07 1983-02-15 Mitsubishi Electric Corp Dry etching apparatus
JPS5842234A (en) * 1981-09-04 1983-03-11 Kokusai Electric Co Ltd Plasma dry etching device
JPH0235453B2 (en) * 1981-09-24 1990-08-10 Hitachi Ltd
JPS5985864A (en) * 1982-11-08 1984-05-17 Hitachi Ltd Sputtering device
JPS59103757U (en) * 1982-12-27 1984-07-12
JPS6057936A (en) * 1983-09-09 1985-04-03 Ulvac Corp Polyhedral columnar etching electrode utilizing revolving magnetic field
JPS62271432A (en) * 1986-11-28 1987-11-25 Toshiba Corp Dry etching apparatus
JPH01127674A (en) * 1987-11-11 1989-05-19 Matsushita Electric Ind Co Ltd Magnetron sputtering device
DE69121446D1 (en) * 1990-03-30 1996-09-26 Applied Materials Inc atomisation
JPH04131651U (en) * 1991-05-21 1992-12-03
KR950000906B1 (en) * 1991-08-02 1995-02-03 야스다 스스무 Sputtering apparatus
US5458759A (en) * 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
US5188717A (en) * 1991-09-12 1993-02-23 Novellus Systems, Inc. Sweeping method and magnet track apparatus for magnetron sputtering

Family Cites Families (2)

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US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
JPS5527627B2 (en) * 1976-02-09 1980-07-22

Cited By (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2920780A1 (en) * 1978-08-21 1980-03-06 Vac Tec Syst Sputtering with magnetic enhancement
FR2434479A1 (en) * 1978-08-21 1980-03-21 Vac Tec Syst Apparatus for spraying or cathodic metallization has magnetic effect improves
US4265729A (en) * 1978-09-27 1981-05-05 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device
DE3004546A1 (en) * 1979-02-19 1980-08-21 Hiradastech Ipari Kutato Penning sputter source
US4309266A (en) * 1980-07-18 1982-01-05 Murata Manufacturing Co., Ltd. Magnetron sputtering apparatus
US4407713A (en) * 1980-08-08 1983-10-04 Battelle Development Corporation Cylindrical magnetron sputtering cathode and apparatus
EP0045822B1 (en) * 1980-08-08 1985-05-29 Battelle Development Corporation Cylindrical magnetron sputtering cathode
DE3030329A1 (en) * 1980-08-11 1982-02-25 Heraeus Gmbh W C Supported target for cathodic sputtering - comprises target shrink fitted into metal carrier
DE3047113A1 (en) * 1980-12-13 1982-07-29 Leybold Heraeus Gmbh & Co Kg Cathode assembly, and control method for katodenzerstaeubungsanlagen with a magnet system for increasing the sputtering rate
FR2496126A1 (en) * 1980-12-13 1982-06-18 Leybold Heraeus Gmbh & Co Kg cathode means and method of
DE3047113C2 (en) * 1980-12-13 1989-06-15 Leybold Ag, 6450 Hanau, De
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
WO1982002725A1 (en) * 1981-02-12 1982-08-19 Glass Corp Shatterproof Magnetron cathode sputtering apparatus
DE3212679A1 (en) * 1981-04-07 1982-11-11 Paul R Fournier Improved integrated sputtering arrangement and process
US4394236A (en) * 1982-02-16 1983-07-19 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
DE3223245A1 (en) * 1982-07-23 1983-12-22 Ulvac Corp Ferromagnetic high speed sputter device
DE3331245A1 (en) * 1982-09-03 1984-03-08 Gartek Systems Inc Level magnetron sputtering
US4444643A (en) * 1982-09-03 1984-04-24 Gartek Systems, Inc. Planar magnetron sputtering device
EP0105407A2 (en) * 1982-09-30 1984-04-18 GTE Products Corporation A sputtering cathode apparatus
EP0105407A3 (en) * 1982-09-30 1984-10-03 Gte Products Corporation A sputtering cathode apparatus
DE3248121A1 (en) * 1982-12-24 1984-06-28 Leybold Heraeus Gmbh & Co Kg High-cathode assembly for the generation of multiple layers
DE3429988A1 (en) * 1983-12-05 1985-06-13 Leybold Heraeus Gmbh & Co Kg Magnetron cathode for sputtering ferromagnetic targets
EP0154078A2 (en) * 1984-02-03 1985-09-11 Kabushiki Kaisha Toshiba Plasma treatment apparatus
EP0154078A3 (en) * 1984-02-03 1986-08-27 Kabushiki Kaisha Toshiba Plasma treatment apparatus
US4552639A (en) * 1984-07-20 1985-11-12 Varian Associates, Inc. Magnetron sputter etching system
EP0169532A3 (en) * 1984-07-25 1988-01-07 Kabushiki Kaisha Tokuda Seisakusho Magnet driving method and device for same
EP0169532A2 (en) * 1984-07-25 1986-01-29 Kabushiki Kaisha Tokuda Seisakusho Magnet driving method and device for same
EP0173583B1 (en) * 1984-08-31 1990-12-19 Anelva Corporation Discharge apparatus
US4872964A (en) * 1985-08-02 1989-10-10 Fujitsu Limited Planar magnetron sputtering apparatus and its magnetic source
EP0213922A2 (en) * 1985-08-26 1987-03-11 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
EP0213922A3 (en) * 1985-08-26 1988-09-07 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
EP0242826A2 (en) * 1986-04-17 1987-10-28 dos Santos Pereira Ribeiro, Carlos Antonio, Dipl.-Ing. Cathode for magnetron sputtering
EP0242826A3 (en) * 1986-04-17 1989-12-13 Santos Pereira Ribeiro Carlos Antonio Dipl.-Ing. Dos Cathode for magnetron sputtering
DE3619194A1 (en) * 1986-06-06 1987-12-10 Leybold Heraeus Gmbh & Co Kg Magnetron sputtering cathode for vacuum-coating systems
US4746417A (en) * 1986-06-06 1988-05-24 Leybold-Heraeus Gmbh Magnetron sputtering cathode for vacuum coating apparatus
US4761219A (en) * 1987-01-23 1988-08-02 Anelva Corporation Magnetron sputtering etching apparatus
DE3801205C1 (en) * 1988-01-18 1989-03-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Device for ion etching of substrates with the support of a magnetic field
EP0335526A3 (en) * 1988-03-31 1991-05-02 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
EP0335526A2 (en) * 1988-03-31 1989-10-04 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
DE3929695A1 (en) * 1989-09-07 1991-03-14 Leybold Ag An apparatus for coating a substrate
US5320728A (en) * 1990-03-30 1994-06-14 Applied Materials, Inc. Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity
US5242566A (en) * 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
US5427665A (en) * 1990-07-11 1995-06-27 Leybold Aktiengesellschaft Process and apparatus for reactive coating of a substrate
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US5182003A (en) * 1990-12-07 1993-01-26 Leybold Aktiengesellschaft Stationary magnetron sputtering cathode for a vacuum coating apparatus
DE4039101C2 (en) * 1990-12-07 1998-05-28 Leybold Ag Fixed magnetron sputtering cathode for vacuum coating systems
DE4039101A1 (en) * 1990-12-07 1992-06-11 Leybold Ag Fixed magnetron sputtering cathode for vacuum coating systems
DE4109018C2 (en) * 1991-03-20 2002-02-28 Unaxis Deutschland Holding An apparatus for coating a substrate
US5167789A (en) * 1991-03-20 1992-12-01 Leybold Aktiengesellschaft Apparatus for coating a substrate
US5284564A (en) * 1991-07-30 1994-02-08 Leybold Aktiengesellschaft Magnetron sputtering cathode for vacuum coating apparatus
DE4125110C2 (en) * 1991-07-30 1999-09-09 Leybold Ag Magnetron sputtering cathode for vacuum coating systems
US5164063A (en) * 1991-08-27 1992-11-17 Leybold Aktiengesellschaft Sputtering cathode arrangement according to the magnetron principle for coating a flat annular surface
DE4128340C2 (en) * 1991-08-27 1999-09-23 Leybold Ag Sputtering cathode according to the magnetron principle for the coating of an annular coating area
US5262030A (en) * 1992-01-15 1993-11-16 Alum Rock Technology Magnetron sputtering cathode with electrically variable source size and location for coating multiple substrates
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly
US5328585A (en) * 1992-12-11 1994-07-12 Photran Corporation Linear planar-magnetron sputtering apparatus with reciprocating magnet-array
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device
US5538609A (en) * 1994-07-23 1996-07-23 Leybold Aktiengesellschaft Cathodic sputtering system
EP0805880A4 (en) * 1995-01-12 1998-05-06 Boc Group Inc Rotatable magnetron with curved or segmented end magnets
EP0805880A1 (en) * 1995-01-12 1997-11-12 The Boc Group, Inc. Rotatable magnetron with curved or segmented end magnets
US5688388A (en) * 1995-08-17 1997-11-18 Balzers Und Leybold Deutschland Holding Ag Apparatus for coating a substrate
DE19610253C2 (en) * 1996-03-15 1999-01-14 Fraunhofer Ges Forschung atomizing
DE19610253A1 (en) * 1996-03-15 1997-10-09 Fraunhofer Ges Forschung Sputtering apparatus for coating glass, packaging material, tools etc.
US5833815A (en) * 1996-04-24 1998-11-10 Anelva Corporation Sputter deposition system
US5855744A (en) * 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
US5968328A (en) * 1996-12-11 1999-10-19 Leybold Systems Gmbh Device for sputter deposition of thin layers on flat substrates
US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
US6464841B1 (en) * 1997-03-04 2002-10-15 Tokyo Electron Limited Cathode having variable magnet configuration
US6960284B2 (en) * 1997-05-08 2005-11-01 Applied Materials, Inc. Rotational and reciprocal radial movement of a sputtering magnetron
US7335282B2 (en) * 1999-02-12 2008-02-26 Jianming Fu Sputtering using an unbalanced magnetron
US6132565A (en) * 1999-10-01 2000-10-17 Taiwan Semiconductor Manufacturing Company, Ltd Magnetron assembly equipped with traversing magnets and method of using
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8668816B2 (en) 1999-10-08 2014-03-11 Applied Materials Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US9062372B2 (en) * 2002-08-01 2015-06-23 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US8500975B2 (en) 2004-01-07 2013-08-06 Applied Materials, Inc. Method and apparatus for sputtering onto large flat panels
US7513982B2 (en) 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
WO2006063484A1 (en) 2004-12-17 2006-06-22 Unaxis Balzers Aktiengesellschaft Magnetron sputtering apparatus
US7744730B2 (en) * 2005-04-14 2010-06-29 Tango Systems, Inc. Rotating pallet in sputtering system
US7682495B2 (en) * 2005-04-14 2010-03-23 Tango Systems, Inc. Oscillating magnet in sputtering system
WO2006132806A3 (en) * 2005-06-06 2007-04-12 Applied Materials Inc Multiple scanning magnetrons
WO2006132806A2 (en) * 2005-06-06 2006-12-14 Applied Materials, Inc. Multiple scanning magnetrons
WO2007015933A2 (en) * 2005-07-25 2007-02-08 Applied Material, Inc. Method and apparatus for sputtering onto large flat panels
WO2007015933A3 (en) * 2005-07-25 2009-06-11 Applied Material Inc Method and apparatus for sputtering onto large flat panels
US7628899B2 (en) 2005-09-07 2009-12-08 Applied Materials, Inc. Apparatus and method of positioning a multizone magnetron assembly
US8273221B2 (en) 2005-12-13 2012-09-25 Oerlikon Solar Ag, Trubbach Sputter target utilization
DE102009007156A1 (en) 2008-01-31 2009-08-06 Von Ardenne Anlagentechnik Gmbh Magnetron sputtering assembly has a ceramic cruciform electrical separator between magnetic system and drive

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