KR830000538B1 - 유리밀폐다중 칩(Chip) 공정 - Google Patents

유리밀폐다중 칩(Chip) 공정 Download PDF

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Publication number
KR830000538B1
KR830000538B1 KR1019790004446A KR790004446A KR830000538B1 KR 830000538 B1 KR830000538 B1 KR 830000538B1 KR 1019790004446 A KR1019790004446 A KR 1019790004446A KR 790004446 A KR790004446 A KR 790004446A KR 830000538 B1 KR830000538 B1 KR 830000538B1
Authority
KR
South Korea
Prior art keywords
glass
groove
wafer
furnace
annular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019790004446A
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English (en)
Korean (ko)
Inventor
에드가죤슨 죠세프
Original Assignee
디. 윌콕스
웨스팅하우스 일렉트릭 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 디. 윌콕스, 웨스팅하우스 일렉트릭 코오포레이숀 filed Critical 디. 윌콕스
Application granted granted Critical
Publication of KR830000538B1 publication Critical patent/KR830000538B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment

Landscapes

  • Thyristors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1019790004446A 1978-12-15 1979-12-14 유리밀폐다중 칩(Chip) 공정 Expired KR830000538B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/970,045 US4235645A (en) 1978-12-15 1978-12-15 Process for forming glass-sealed multichip semiconductor devices
US970045 1978-12-15

Publications (1)

Publication Number Publication Date
KR830000538B1 true KR830000538B1 (ko) 1983-03-12

Family

ID=25516355

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019790004446A Expired KR830000538B1 (ko) 1978-12-15 1979-12-14 유리밀폐다중 칩(Chip) 공정

Country Status (8)

Country Link
US (1) US4235645A (https=)
EP (1) EP0013815B1 (https=)
JP (1) JPS5582442A (https=)
KR (1) KR830000538B1 (https=)
BR (1) BR7908143A (https=)
CA (1) CA1125923A (https=)
DE (1) DE2967587D1 (https=)
IN (1) IN150329B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN154896B (https=) * 1980-07-10 1984-12-22 Westinghouse Electric Corp
US4320571A (en) * 1980-10-14 1982-03-23 International Rectifier Corporation Stencil mask process for high power, high speed controlled rectifiers
US5133795A (en) * 1986-11-04 1992-07-28 General Electric Company Method of making a silicon package for a power semiconductor device
US5034044A (en) * 1988-05-11 1991-07-23 General Electric Company Method of bonding a silicon package for a power semiconductor device
JP3259599B2 (ja) * 1995-06-20 2002-02-25 三菱電機株式会社 圧接型半導体装置
US9029200B2 (en) 2010-07-15 2015-05-12 Infineon Technologies Austria Ag Method for manufacturing semiconductor devices having a metallisation layer
US8865522B2 (en) 2010-07-15 2014-10-21 Infineon Technologies Austria Ag Method for manufacturing semiconductor devices having a glass substrate
US8202786B2 (en) 2010-07-15 2012-06-19 Infineon Technologies Austria Ag Method for manufacturing semiconductor devices having a glass substrate
US9048106B2 (en) * 2012-12-13 2015-06-02 Diodes Incorporated Semiconductor diode assembly
EP3113219B1 (de) * 2015-06-30 2020-03-11 SEMIKRON Elektronik GmbH & Co. KG Halbleiterbauelement und verfahren zu dessen herstellung
JP7456220B2 (ja) * 2020-03-19 2024-03-27 Tdk株式会社 ショットキーバリアダイオード

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB940277A (en) * 1960-08-25 1963-10-30 Carman Lab Inc Improvements in semiconductor devices
US3241010A (en) * 1962-03-23 1966-03-15 Texas Instruments Inc Semiconductor junction passivation
US3271124A (en) * 1963-09-16 1966-09-06 Bell Telephone Labor Inc Semiconductor encapsulation
DE1274736C2 (de) * 1964-12-03 1974-02-07 Verfahren zur herstellung einer halbleitervorrichtung
US3446695A (en) * 1966-10-03 1969-05-27 Owens Illinois Inc Vanadium-zinc borate solder glasses
US3506502A (en) * 1967-06-05 1970-04-14 Sony Corp Method of making a glass passivated mesa semiconductor device
US3591837A (en) * 1968-02-06 1971-07-06 Int Rectifier Corp Glass-sealed alloyed semiconductor device
US3806771A (en) * 1969-05-05 1974-04-23 Gen Electric Smoothly beveled semiconductor device with thick glass passivant
US3639975A (en) * 1969-07-30 1972-02-08 Gen Electric Glass encapsulated semiconductor device fabrication process
US3821782A (en) * 1971-01-14 1974-06-28 J Hutson High voltage semiconductor device with plural grooves
DE2306842C3 (de) * 1973-02-12 1981-10-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen einer Vielzahl von Halbleiterelementen aus einer einzigen Halbleiterscheibe
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices
US4007476A (en) * 1975-04-21 1977-02-08 Hutson Jearld L Technique for passivating semiconductor devices
DE2517743C3 (de) * 1975-04-22 1980-03-06 Jenaer Glaswerk Schott & Gen., 6500 Mainz Passivierender Schutzüberzug für Siliziumhalbleiterbauelemente
US4063272A (en) * 1975-11-26 1977-12-13 General Electric Company Semiconductor device and method of manufacture thereof
JPS52119862A (en) * 1976-04-02 1977-10-07 Hitachi Ltd Semi-conductor device and its manufacture
JPS584815B2 (ja) * 1976-04-27 1983-01-27 三菱電機株式会社 半導体装置の製造方法
US4046545A (en) * 1976-05-25 1977-09-06 Corning Glass Works Method for making molded glass articles having bulk homogeneity and optical quality surface
DE2724348A1 (de) * 1976-06-08 1977-12-22 Itt Ind Gmbh Deutsche Glaspassiviertes halbleiterbauelement und verfahren zur herstellung
JPS535971A (en) * 1976-07-06 1978-01-19 Mitsubishi Electric Corp Semiconductor device
JPS5367363A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device
US4168960A (en) * 1978-04-18 1979-09-25 Westinghouse Electric Corp. Method of making a glass encapsulated diode

Also Published As

Publication number Publication date
BR7908143A (pt) 1980-07-22
EP0013815B1 (en) 1986-03-12
CA1125923A (en) 1982-06-15
DE2967587D1 (en) 1986-04-17
JPS5582442A (en) 1980-06-21
JPS6346978B2 (https=) 1988-09-20
EP0013815A1 (en) 1980-08-06
US4235645A (en) 1980-11-25
IN150329B (https=) 1982-09-11

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