KR20260027162A - 에칭액, 에칭 방법 및 반도체 디바이스의 제조 방법 - Google Patents
에칭액, 에칭 방법 및 반도체 디바이스의 제조 방법Info
- Publication number
- KR20260027162A KR20260027162A KR1020257042331A KR20257042331A KR20260027162A KR 20260027162 A KR20260027162 A KR 20260027162A KR 1020257042331 A KR1020257042331 A KR 1020257042331A KR 20257042331 A KR20257042331 A KR 20257042331A KR 20260027162 A KR20260027162 A KR 20260027162A
- Authority
- KR
- South Korea
- Prior art keywords
- etching solution
- etching
- silicon
- mass
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023105664 | 2023-06-28 | ||
| JPJP-P-2023-105663 | 2023-06-28 | ||
| JPJP-P-2023-105664 | 2023-06-28 | ||
| JP2023105663 | 2023-06-28 | ||
| PCT/JP2024/023438 WO2025005206A1 (ja) | 2023-06-28 | 2024-06-27 | エッチング液、エッチング方法及び半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20260027162A true KR20260027162A (ko) | 2026-02-27 |
Family
ID=93939240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257042331A Pending KR20260027162A (ko) | 2023-06-28 | 2024-06-27 | 에칭액, 에칭 방법 및 반도체 디바이스의 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2025005206A1 (https=) |
| KR (1) | KR20260027162A (https=) |
| TW (1) | TW202518579A (https=) |
| WO (1) | WO2025005206A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4975430B2 (ja) * | 2006-12-28 | 2012-07-11 | 関東化学株式会社 | 異方性エッチング液およびそれを用いたエッチング方法 |
| JP5244030B2 (ja) * | 2009-06-01 | 2013-07-24 | パナソニック株式会社 | シリコン異方性エッチング方法及びシリコン異方性エッチング液 |
| JP5455461B2 (ja) * | 2009-06-17 | 2014-03-26 | キヤノン株式会社 | シリコン基板の加工方法及び液体吐出ヘッド用基板の製造方法 |
| JP2021012940A (ja) * | 2019-07-05 | 2021-02-04 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2021136429A (ja) * | 2020-02-27 | 2021-09-13 | 株式会社トクヤマ | シリコンエッチング液、該エッチング液を用いたシリコンデバイスの製造方法および基板処理方法 |
| US11508828B2 (en) * | 2020-07-06 | 2022-11-22 | Applied Materials, Inc. | Selective silicon etch for gate all around transistors |
| JP7765206B2 (ja) * | 2021-06-24 | 2025-11-06 | 花王株式会社 | シリコン用エッチング液 |
-
2024
- 2024-06-27 JP JP2025530208A patent/JPWO2025005206A1/ja active Pending
- 2024-06-27 KR KR1020257042331A patent/KR20260027162A/ko active Pending
- 2024-06-27 WO PCT/JP2024/023438 patent/WO2025005206A1/ja not_active Ceased
- 2024-06-28 TW TW113124278A patent/TW202518579A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2025005206A1 (https=) | 2025-01-02 |
| TW202518579A (zh) | 2025-05-01 |
| WO2025005206A1 (ja) | 2025-01-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |