JPWO2025005206A1 - - Google Patents
Info
- Publication number
- JPWO2025005206A1 JPWO2025005206A1 JP2025530208A JP2025530208A JPWO2025005206A1 JP WO2025005206 A1 JPWO2025005206 A1 JP WO2025005206A1 JP 2025530208 A JP2025530208 A JP 2025530208A JP 2025530208 A JP2025530208 A JP 2025530208A JP WO2025005206 A1 JPWO2025005206 A1 JP WO2025005206A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023105664 | 2023-06-28 | ||
| JP2023105663 | 2023-06-28 | ||
| PCT/JP2024/023438 WO2025005206A1 (ja) | 2023-06-28 | 2024-06-27 | エッチング液、エッチング方法及び半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025005206A1 true JPWO2025005206A1 (https=) | 2025-01-02 |
Family
ID=93939240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025530208A Pending JPWO2025005206A1 (https=) | 2023-06-28 | 2024-06-27 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2025005206A1 (https=) |
| KR (1) | KR20260027162A (https=) |
| TW (1) | TW202518579A (https=) |
| WO (1) | WO2025005206A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4975430B2 (ja) * | 2006-12-28 | 2012-07-11 | 関東化学株式会社 | 異方性エッチング液およびそれを用いたエッチング方法 |
| JP5244030B2 (ja) * | 2009-06-01 | 2013-07-24 | パナソニック株式会社 | シリコン異方性エッチング方法及びシリコン異方性エッチング液 |
| JP5455461B2 (ja) * | 2009-06-17 | 2014-03-26 | キヤノン株式会社 | シリコン基板の加工方法及び液体吐出ヘッド用基板の製造方法 |
| JP2021012940A (ja) * | 2019-07-05 | 2021-02-04 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2021136429A (ja) * | 2020-02-27 | 2021-09-13 | 株式会社トクヤマ | シリコンエッチング液、該エッチング液を用いたシリコンデバイスの製造方法および基板処理方法 |
| US11508828B2 (en) * | 2020-07-06 | 2022-11-22 | Applied Materials, Inc. | Selective silicon etch for gate all around transistors |
| JP7765206B2 (ja) * | 2021-06-24 | 2025-11-06 | 花王株式会社 | シリコン用エッチング液 |
-
2024
- 2024-06-27 JP JP2025530208A patent/JPWO2025005206A1/ja active Pending
- 2024-06-27 KR KR1020257042331A patent/KR20260027162A/ko active Pending
- 2024-06-27 WO PCT/JP2024/023438 patent/WO2025005206A1/ja not_active Ceased
- 2024-06-28 TW TW113124278A patent/TW202518579A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20260027162A (ko) | 2026-02-27 |
| TW202518579A (zh) | 2025-05-01 |
| WO2025005206A1 (ja) | 2025-01-02 |