TW202518579A - 蝕刻液、蝕刻方法及半導體裝置之製造方法 - Google Patents
蝕刻液、蝕刻方法及半導體裝置之製造方法 Download PDFInfo
- Publication number
- TW202518579A TW202518579A TW113124278A TW113124278A TW202518579A TW 202518579 A TW202518579 A TW 202518579A TW 113124278 A TW113124278 A TW 113124278A TW 113124278 A TW113124278 A TW 113124278A TW 202518579 A TW202518579 A TW 202518579A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching solution
- etching
- silicon
- mass
- compound
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-105664 | 2023-06-28 | ||
| JP2023105664 | 2023-06-28 | ||
| JP2023-105663 | 2023-06-28 | ||
| JP2023105663 | 2023-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202518579A true TW202518579A (zh) | 2025-05-01 |
Family
ID=93939240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113124278A TW202518579A (zh) | 2023-06-28 | 2024-06-28 | 蝕刻液、蝕刻方法及半導體裝置之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2025005206A1 (https=) |
| KR (1) | KR20260027162A (https=) |
| TW (1) | TW202518579A (https=) |
| WO (1) | WO2025005206A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4975430B2 (ja) * | 2006-12-28 | 2012-07-11 | 関東化学株式会社 | 異方性エッチング液およびそれを用いたエッチング方法 |
| JP5244030B2 (ja) * | 2009-06-01 | 2013-07-24 | パナソニック株式会社 | シリコン異方性エッチング方法及びシリコン異方性エッチング液 |
| JP5455461B2 (ja) * | 2009-06-17 | 2014-03-26 | キヤノン株式会社 | シリコン基板の加工方法及び液体吐出ヘッド用基板の製造方法 |
| JP2021012940A (ja) * | 2019-07-05 | 2021-02-04 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2021136429A (ja) * | 2020-02-27 | 2021-09-13 | 株式会社トクヤマ | シリコンエッチング液、該エッチング液を用いたシリコンデバイスの製造方法および基板処理方法 |
| US11508828B2 (en) * | 2020-07-06 | 2022-11-22 | Applied Materials, Inc. | Selective silicon etch for gate all around transistors |
| JP7765206B2 (ja) * | 2021-06-24 | 2025-11-06 | 花王株式会社 | シリコン用エッチング液 |
-
2024
- 2024-06-27 JP JP2025530208A patent/JPWO2025005206A1/ja active Pending
- 2024-06-27 KR KR1020257042331A patent/KR20260027162A/ko active Pending
- 2024-06-27 WO PCT/JP2024/023438 patent/WO2025005206A1/ja not_active Ceased
- 2024-06-28 TW TW113124278A patent/TW202518579A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2025005206A1 (https=) | 2025-01-02 |
| KR20260027162A (ko) | 2026-02-27 |
| WO2025005206A1 (ja) | 2025-01-02 |
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