KR20260014587A - 기판 처리 방법 및 기판 처리 시스템 - Google Patents

기판 처리 방법 및 기판 처리 시스템

Info

Publication number
KR20260014587A
KR20260014587A KR1020257042001A KR20257042001A KR20260014587A KR 20260014587 A KR20260014587 A KR 20260014587A KR 1020257042001 A KR1020257042001 A KR 1020257042001A KR 20257042001 A KR20257042001 A KR 20257042001A KR 20260014587 A KR20260014587 A KR 20260014587A
Authority
KR
South Korea
Prior art keywords
main
substrate
modified region
peripheral
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257042001A
Other languages
English (en)
Korean (ko)
Inventor
요헤이 야마시타
야스타카 미조모토
쥰이치 나카오
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20260014587A publication Critical patent/KR20260014587A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/30—Cutting or separating of wafers, substrates or parts of devices by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)
KR1020257042001A 2023-05-23 2024-03-27 기판 처리 방법 및 기판 처리 시스템 Pending KR20260014587A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023084865 2023-05-23
JPJP-P-2023-084865 2023-05-23
PCT/JP2024/012409 WO2024241699A1 (ja) 2023-05-23 2024-03-27 基板処理方法及び基板処理システム

Publications (1)

Publication Number Publication Date
KR20260014587A true KR20260014587A (ko) 2026-01-30

Family

ID=93590080

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257042001A Pending KR20260014587A (ko) 2023-05-23 2024-03-27 기판 처리 방법 및 기판 처리 시스템

Country Status (5)

Country Link
JP (1) JPWO2024241699A1 (https=)
KR (1) KR20260014587A (https=)
CN (1) CN121100394A (https=)
TW (1) TW202512289A (https=)
WO (1) WO2024241699A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019176589A1 (ja) 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2019208359A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2019208298A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7221076B2 (ja) * 2019-02-18 2023-02-13 東京エレクトロン株式会社 レーザー加工装置の設定方法、レーザー加工方法、レーザー加工装置、薄化システム、および基板処理方法
CN115398599A (zh) * 2020-04-20 2022-11-25 东京毅力科创株式会社 基板处理装置和基板处理方法
JP7549551B2 (ja) * 2021-03-08 2024-09-11 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP7724137B2 (ja) * 2021-11-04 2025-08-15 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019176589A1 (ja) 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2019208359A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2019208298A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Also Published As

Publication number Publication date
JPWO2024241699A1 (https=) 2024-11-28
WO2024241699A1 (ja) 2024-11-28
CN121100394A (zh) 2025-12-09
TW202512289A (zh) 2025-03-16

Similar Documents

Publication Publication Date Title
JP7745013B2 (ja) 基板処理システム
JP7600295B2 (ja) 基板処理方法及び基板処理システム
KR102903522B1 (ko) 기판 처리 방법 및 기판 처리 장치
KR102210284B1 (ko) 웨이퍼의 가공 방법
JP2021103725A (ja) 基板処理方法及び基板処理システム
JP7412131B2 (ja) 基板処理方法及び基板処理システム
KR20220158023A (ko) 기판 처리 방법 및 기판 처리 장치
JP7398242B2 (ja) 基板処理方法及び基板処理システム
JP2021068869A (ja) 基板処理方法及び基板処理システム
JP7577138B2 (ja) 基板処理装置及び基板処理方法
JP7577137B2 (ja) 基板処理装置及び基板処理方法
KR20260014587A (ko) 기판 처리 방법 및 기판 처리 시스템
JP7285151B2 (ja) 支持体剥離方法及び支持体剥離システム
JP7325515B2 (ja) 基板処理方法、及び基板処理装置
KR20260016521A (ko) 기판 처리 방법 및 기판 처리 시스템
KR20250129030A (ko) 중합 기판, 기판 처리 방법 및 기판 처리 시스템
WO2026034066A1 (ja) 基板処理システム及び基板処理方法
TWI913835B (zh) 基板處理方法及基板處理系統
WO2025204976A1 (ja) 基板処理方法及び基板処理システム
TW202614191A (zh) 基板處理方法及基板處理系統

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)