KR20260004546A - 스퍼터링 장치 - Google Patents

스퍼터링 장치

Info

Publication number
KR20260004546A
KR20260004546A KR1020257041272A KR20257041272A KR20260004546A KR 20260004546 A KR20260004546 A KR 20260004546A KR 1020257041272 A KR1020257041272 A KR 1020257041272A KR 20257041272 A KR20257041272 A KR 20257041272A KR 20260004546 A KR20260004546 A KR 20260004546A
Authority
KR
South Korea
Prior art keywords
inductively coupled
film
coupled plasma
chamber
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257041272A
Other languages
English (en)
Korean (ko)
Inventor
사카에 타나카
Original Assignee
미쿠니 일렉트론 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쿠니 일렉트론 코포레이션 filed Critical 미쿠니 일렉트론 코포레이션
Publication of KR20260004546A publication Critical patent/KR20260004546A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020257041272A 2020-06-23 2021-06-22 스퍼터링 장치 Pending KR20260004546A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020107889 2020-06-23
JPJP-P-2020-107889 2020-06-23
PCT/JP2021/023583 WO2021261484A1 (ja) 2020-06-23 2021-06-22 誘導結合プラズマによりスパッタリング成膜を行う成膜装置
KR1020227042423A KR102900424B1 (ko) 2020-06-23 2021-06-22 유도결합플라즈마에 의해 스퍼터링 성막을 수행하는 성막장치

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227042423A Division KR102900424B1 (ko) 2020-06-23 2021-06-22 유도결합플라즈마에 의해 스퍼터링 성막을 수행하는 성막장치

Publications (1)

Publication Number Publication Date
KR20260004546A true KR20260004546A (ko) 2026-01-08

Family

ID=79281201

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257041272A Pending KR20260004546A (ko) 2020-06-23 2021-06-22 스퍼터링 장치
KR1020227042423A Active KR102900424B1 (ko) 2020-06-23 2021-06-22 유도결합플라즈마에 의해 스퍼터링 성막을 수행하는 성막장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227042423A Active KR102900424B1 (ko) 2020-06-23 2021-06-22 유도결합플라즈마에 의해 스퍼터링 성막을 수행하는 성막장치

Country Status (4)

Country Link
JP (2) JP7613762B2 (https=)
KR (2) KR20260004546A (https=)
CN (1) CN115735268B (https=)
WO (1) WO2021261484A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114703461B (zh) * 2022-04-12 2024-03-15 浙江水晶光电科技股份有限公司 一种化合物薄膜及其制备方法
JP2024081176A (ja) * 2022-12-06 2024-06-18 株式会社Gaianixx 成膜装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098563A5 (https=) * 1970-07-10 1972-03-10 Progil
JPH05255840A (ja) * 1992-03-11 1993-10-05 Matsushita Electric Ind Co Ltd 真空蒸着装置
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
JP2002069635A (ja) * 2000-09-05 2002-03-08 Ulvac Japan Ltd プラズマ発生装置並びにこの装置を利用した緻密な硬質薄膜の形成装置及び硬質薄膜の形成方法
JP2004076069A (ja) * 2002-08-13 2004-03-11 Mitsubishi Heavy Ind Ltd 表面処理装置
JP2010126789A (ja) * 2008-11-28 2010-06-10 Shibaura Mechatronics Corp スパッタ成膜装置
JP5400434B2 (ja) * 2009-03-11 2014-01-29 株式会社イー・エム・ディー プラズマ処理装置
US20140150975A1 (en) * 2010-09-06 2014-06-05 Emd Corporation Plasma processing device
WO2013030954A1 (ja) * 2011-08-30 2013-03-07 株式会社イー・エム・ディー スパッタリング薄膜形成装置
JP6142305B2 (ja) * 2012-08-02 2017-06-07 サムコ株式会社 静電吸着方法及び静電吸着装置
JP5969856B2 (ja) * 2012-08-10 2016-08-17 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
JP6147177B2 (ja) * 2013-12-11 2017-06-14 住友重機械イオンテクノロジー株式会社 アンテナカバー及びそれを用いたプラズマ発生装置
JP6373740B2 (ja) * 2014-11-26 2018-08-15 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
JP6916699B2 (ja) * 2017-09-14 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 成膜方法および成膜装置
JP7025711B2 (ja) * 2018-03-14 2022-02-25 日新電機株式会社 アンテナ及びプラズマ処理装置

Also Published As

Publication number Publication date
CN115735268B (zh) 2025-07-08
JP7838846B2 (ja) 2026-04-01
KR20230008774A (ko) 2023-01-16
JPWO2021261484A1 (https=) 2021-12-30
WO2021261484A1 (ja) 2021-12-30
JP2024167324A (ja) 2024-12-03
JP7613762B2 (ja) 2025-01-15
KR102900424B1 (ko) 2025-12-16
CN115735268A (zh) 2023-03-03

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Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE)

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

PG1501 Laying open of application

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Q12 Application published

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