JP7613762B2 - 誘導結合プラズマによりスパッタリング成膜を行う成膜装置 - Google Patents

誘導結合プラズマによりスパッタリング成膜を行う成膜装置 Download PDF

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Publication number
JP7613762B2
JP7613762B2 JP2022532493A JP2022532493A JP7613762B2 JP 7613762 B2 JP7613762 B2 JP 7613762B2 JP 2022532493 A JP2022532493 A JP 2022532493A JP 2022532493 A JP2022532493 A JP 2022532493A JP 7613762 B2 JP7613762 B2 JP 7613762B2
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Japan
Prior art keywords
chamber
antenna
film
sputtering target
deposition
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JP2022532493A
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Japanese (ja)
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JPWO2021261484A5 (https=
JPWO2021261484A1 (https=
Inventor
栄 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mikuni Electron Co Ltd
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Mikuni Electron Co Ltd
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Priority to JP2024147157A priority Critical patent/JP7838846B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2022532493A 2020-06-23 2021-06-22 誘導結合プラズマによりスパッタリング成膜を行う成膜装置 Active JP7613762B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024147157A JP7838846B2 (ja) 2020-06-23 2024-08-29 スパッタリング装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020107889 2020-06-23
JP2020107889 2020-06-23
PCT/JP2021/023583 WO2021261484A1 (ja) 2020-06-23 2021-06-22 誘導結合プラズマによりスパッタリング成膜を行う成膜装置

Related Child Applications (1)

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JP2024147157A Division JP7838846B2 (ja) 2020-06-23 2024-08-29 スパッタリング装置

Publications (3)

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JPWO2021261484A1 JPWO2021261484A1 (https=) 2021-12-30
JPWO2021261484A5 JPWO2021261484A5 (https=) 2023-04-19
JP7613762B2 true JP7613762B2 (ja) 2025-01-15

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JP2022532493A Active JP7613762B2 (ja) 2020-06-23 2021-06-22 誘導結合プラズマによりスパッタリング成膜を行う成膜装置
JP2024147157A Active JP7838846B2 (ja) 2020-06-23 2024-08-29 スパッタリング装置

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JP2024147157A Active JP7838846B2 (ja) 2020-06-23 2024-08-29 スパッタリング装置

Country Status (4)

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JP (2) JP7613762B2 (https=)
KR (2) KR20260004546A (https=)
CN (1) CN115735268B (https=)
WO (1) WO2021261484A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114703461B (zh) * 2022-04-12 2024-03-15 浙江水晶光电科技股份有限公司 一种化合物薄膜及其制备方法
JP2024081176A (ja) * 2022-12-06 2024-06-18 株式会社Gaianixx 成膜装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004076069A (ja) 2002-08-13 2004-03-11 Mitsubishi Heavy Ind Ltd 表面処理装置
JP2014037555A (ja) 2012-08-10 2014-02-27 Dainippon Screen Mfg Co Ltd スパッタリング装置
JP2016098425A (ja) 2014-11-26 2016-05-30 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
JP2019052345A (ja) 2017-09-14 2019-04-04 株式会社Ｓｃｒｅｅｎホールディングス 成膜方法および成膜装置
JP2019160593A (ja) 2018-03-14 2019-09-19 日新電機株式会社 アンテナ及びプラズマ処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098563A5 (https=) * 1970-07-10 1972-03-10 Progil
JPH05255840A (ja) * 1992-03-11 1993-10-05 Matsushita Electric Ind Co Ltd 真空蒸着装置
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
JP2002069635A (ja) * 2000-09-05 2002-03-08 Ulvac Japan Ltd プラズマ発生装置並びにこの装置を利用した緻密な硬質薄膜の形成装置及び硬質薄膜の形成方法
JP2010126789A (ja) * 2008-11-28 2010-06-10 Shibaura Mechatronics Corp スパッタ成膜装置
JP5400434B2 (ja) * 2009-03-11 2014-01-29 株式会社イー・エム・ディー プラズマ処理装置
US20140150975A1 (en) * 2010-09-06 2014-06-05 Emd Corporation Plasma processing device
WO2013030954A1 (ja) * 2011-08-30 2013-03-07 株式会社イー・エム・ディー スパッタリング薄膜形成装置
JP6142305B2 (ja) * 2012-08-02 2017-06-07 サムコ株式会社 静電吸着方法及び静電吸着装置
JP6147177B2 (ja) * 2013-12-11 2017-06-14 住友重機械イオンテクノロジー株式会社 アンテナカバー及びそれを用いたプラズマ発生装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004076069A (ja) 2002-08-13 2004-03-11 Mitsubishi Heavy Ind Ltd 表面処理装置
JP2014037555A (ja) 2012-08-10 2014-02-27 Dainippon Screen Mfg Co Ltd スパッタリング装置
JP2016098425A (ja) 2014-11-26 2016-05-30 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
JP2019052345A (ja) 2017-09-14 2019-04-04 株式会社Ｓｃｒｅｅｎホールディングス 成膜方法および成膜装置
JP2019160593A (ja) 2018-03-14 2019-09-19 日新電機株式会社 アンテナ及びプラズマ処理装置

Also Published As

Publication number Publication date
CN115735268B (zh) 2025-07-08
JP7838846B2 (ja) 2026-04-01
KR20230008774A (ko) 2023-01-16
JPWO2021261484A1 (https=) 2021-12-30
WO2021261484A1 (ja) 2021-12-30
JP2024167324A (ja) 2024-12-03
KR102900424B1 (ko) 2025-12-16
CN115735268A (zh) 2023-03-03
KR20260004546A (ko) 2026-01-08

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