CN115735268B - 通过电感耦合等离子体进行溅射成膜的成膜装置 - Google Patents

通过电感耦合等离子体进行溅射成膜的成膜装置 Download PDF

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Publication number
CN115735268B
CN115735268B CN202180044881.5A CN202180044881A CN115735268B CN 115735268 B CN115735268 B CN 115735268B CN 202180044881 A CN202180044881 A CN 202180044881A CN 115735268 B CN115735268 B CN 115735268B
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CN
China
Prior art keywords
film forming
antenna
chamber
film
sputtering target
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CN202180044881.5A
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English (en)
Chinese (zh)
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CN115735268A (zh
Inventor
田中荣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mikuni Electron Co Ltd
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Mikuni Electron Co Ltd
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Publication of CN115735268A publication Critical patent/CN115735268A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN202180044881.5A 2020-06-23 2021-06-22 通过电感耦合等离子体进行溅射成膜的成膜装置 Active CN115735268B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-107889 2020-06-23
JP2020107889 2020-06-23
PCT/JP2021/023583 WO2021261484A1 (ja) 2020-06-23 2021-06-22 誘導結合プラズマによりスパッタリング成膜を行う成膜装置

Publications (2)

Publication Number Publication Date
CN115735268A CN115735268A (zh) 2023-03-03
CN115735268B true CN115735268B (zh) 2025-07-08

Family

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Family Applications (1)

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CN202180044881.5A Active CN115735268B (zh) 2020-06-23 2021-06-22 通过电感耦合等离子体进行溅射成膜的成膜装置

Country Status (4)

Country Link
JP (2) JP7613762B2 (https=)
KR (2) KR20260004546A (https=)
CN (1) CN115735268B (https=)
WO (1) WO2021261484A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114703461B (zh) * 2022-04-12 2024-03-15 浙江水晶光电科技股份有限公司 一种化合物薄膜及其制备方法
JP2024081176A (ja) * 2022-12-06 2024-06-18 株式会社Gaianixx 成膜装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004076069A (ja) * 2002-08-13 2004-03-11 Mitsubishi Heavy Ind Ltd 表面処理装置
JP2010126789A (ja) * 2008-11-28 2010-06-10 Shibaura Mechatronics Corp スパッタ成膜装置
CN103155718A (zh) * 2010-09-06 2013-06-12 Emd株式会社 等离子处理装置
JP2016098425A (ja) * 2014-11-26 2016-05-30 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
CN109504944A (zh) * 2017-09-14 2019-03-22 株式会社斯库林集团 成膜方法以及成膜装置
JP2019160593A (ja) * 2018-03-14 2019-09-19 日新電機株式会社 アンテナ及びプラズマ処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098563A5 (https=) * 1970-07-10 1972-03-10 Progil
JPH05255840A (ja) * 1992-03-11 1993-10-05 Matsushita Electric Ind Co Ltd 真空蒸着装置
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
JP2002069635A (ja) * 2000-09-05 2002-03-08 Ulvac Japan Ltd プラズマ発生装置並びにこの装置を利用した緻密な硬質薄膜の形成装置及び硬質薄膜の形成方法
JP5400434B2 (ja) * 2009-03-11 2014-01-29 株式会社イー・エム・ディー プラズマ処理装置
WO2013030954A1 (ja) * 2011-08-30 2013-03-07 株式会社イー・エム・ディー スパッタリング薄膜形成装置
JP6142305B2 (ja) * 2012-08-02 2017-06-07 サムコ株式会社 静電吸着方法及び静電吸着装置
JP5969856B2 (ja) * 2012-08-10 2016-08-17 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
JP6147177B2 (ja) * 2013-12-11 2017-06-14 住友重機械イオンテクノロジー株式会社 アンテナカバー及びそれを用いたプラズマ発生装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004076069A (ja) * 2002-08-13 2004-03-11 Mitsubishi Heavy Ind Ltd 表面処理装置
JP2010126789A (ja) * 2008-11-28 2010-06-10 Shibaura Mechatronics Corp スパッタ成膜装置
CN103155718A (zh) * 2010-09-06 2013-06-12 Emd株式会社 等离子处理装置
JP2016098425A (ja) * 2014-11-26 2016-05-30 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
CN109504944A (zh) * 2017-09-14 2019-03-22 株式会社斯库林集团 成膜方法以及成膜装置
JP2019160593A (ja) * 2018-03-14 2019-09-19 日新電機株式会社 アンテナ及びプラズマ処理装置

Also Published As

Publication number Publication date
JP7838846B2 (ja) 2026-04-01
KR20230008774A (ko) 2023-01-16
JPWO2021261484A1 (https=) 2021-12-30
WO2021261484A1 (ja) 2021-12-30
JP2024167324A (ja) 2024-12-03
JP7613762B2 (ja) 2025-01-15
KR102900424B1 (ko) 2025-12-16
CN115735268A (zh) 2023-03-03
KR20260004546A (ko) 2026-01-08

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