KR20250160428A - 에칭 조성물, 에칭 조성물의 제조 방법, 에칭 방법, 반도체 디바이스의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법 - Google Patents

에칭 조성물, 에칭 조성물의 제조 방법, 에칭 방법, 반도체 디바이스의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법

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Publication number
KR20250160428A
KR20250160428A KR1020257026654A KR20257026654A KR20250160428A KR 20250160428 A KR20250160428 A KR 20250160428A KR 1020257026654 A KR1020257026654 A KR 1020257026654A KR 20257026654 A KR20257026654 A KR 20257026654A KR 20250160428 A KR20250160428 A KR 20250160428A
Authority
KR
South Korea
Prior art keywords
etching
etching composition
silicon
compound
silicon germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257026654A
Other languages
English (en)
Korean (ko)
Inventor
데츠오 가사이
히로유키 시라에
Original Assignee
미쯔비시 케미컬 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쯔비시 케미컬 주식회사 filed Critical 미쯔비시 케미컬 주식회사
Publication of KR20250160428A publication Critical patent/KR20250160428A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H01L21/30604—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
    • H10D30/0191—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels forming stacked channels, e.g. changing their shapes or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020257026654A 2023-03-14 2024-03-08 에칭 조성물, 에칭 조성물의 제조 방법, 에칭 방법, 반도체 디바이스의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법 Pending KR20250160428A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-040024 2023-03-14
JP2023040024 2023-03-14
PCT/JP2024/008999 WO2024190648A1 (ja) 2023-03-14 2024-03-08 エッチング組成物、エッチング組成物の製造方法、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法

Publications (1)

Publication Number Publication Date
KR20250160428A true KR20250160428A (ko) 2025-11-13

Family

ID=92755724

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257026654A Pending KR20250160428A (ko) 2023-03-14 2024-03-08 에칭 조성물, 에칭 조성물의 제조 방법, 에칭 방법, 반도체 디바이스의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법

Country Status (5)

Country Link
US (1) US20260008957A1 (https=)
JP (1) JPWO2024190648A1 (https=)
KR (1) KR20250160428A (https=)
TW (1) TW202503893A (https=)
WO (1) WO2024190648A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022153658A (ja) 2018-11-28 2022-10-12 本田技研工業株式会社 経路評価装置、経路評価方法および経路評価プログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480360B (zh) * 2009-04-03 2015-04-11 杜邦股份有限公司 蝕刻劑組成物及方法
US10934485B2 (en) * 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
CN116635986A (zh) * 2021-01-12 2023-08-22 三菱化学株式会社 蚀刻组合物、蚀刻方法、半导体器件的制造方法和全环绕栅极型晶体管的制造方法
WO2022172907A1 (ja) * 2021-02-10 2022-08-18 株式会社トクヤマ 基板の処理方法、および該処理方法を含むシリコンデバイスの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022153658A (ja) 2018-11-28 2022-10-12 本田技研工業株式会社 経路評価装置、経路評価方法および経路評価プログラム

Also Published As

Publication number Publication date
JPWO2024190648A1 (https=) 2024-09-19
TW202503893A (zh) 2025-01-16
WO2024190648A1 (ja) 2024-09-19
US20260008957A1 (en) 2026-01-08

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