KR20250129608A - 반도체 레이저 소자 - Google Patents

반도체 레이저 소자

Info

Publication number
KR20250129608A
KR20250129608A KR1020257006180A KR20257006180A KR20250129608A KR 20250129608 A KR20250129608 A KR 20250129608A KR 1020257006180 A KR1020257006180 A KR 1020257006180A KR 20257006180 A KR20257006180 A KR 20257006180A KR 20250129608 A KR20250129608 A KR 20250129608A
Authority
KR
South Korea
Prior art keywords
nitride semiconductor
semiconductor layer
layer
side nitride
diffraction grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257006180A
Other languages
English (en)
Korean (ko)
Inventor
요시타카 나카쓰
카즈타카 츠카야마
Original Assignee
니치아 카가쿠 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니치아 카가쿠 고교 가부시키가이샤 filed Critical 니치아 카가쿠 고교 가부시키가이샤
Publication of KR20250129608A publication Critical patent/KR20250129608A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020257006180A 2022-12-26 2023-12-11 반도체 레이저 소자 Pending KR20250129608A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022208079 2022-12-26
JPJP-P-2022-208079 2022-12-26
PCT/JP2023/044165 WO2024142875A1 (ja) 2022-12-26 2023-12-11 半導体レーザ素子

Publications (1)

Publication Number Publication Date
KR20250129608A true KR20250129608A (ko) 2025-08-29

Family

ID=91717564

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257006180A Pending KR20250129608A (ko) 2022-12-26 2023-12-11 반도체 레이저 소자

Country Status (5)

Country Link
JP (2) JP7667524B2 (https=)
KR (1) KR20250129608A (https=)
CN (1) CN120129999A (https=)
DE (1) DE112023005425T5 (https=)
WO (1) WO2024142875A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151088A (ja) 2010-01-19 2011-08-04 Opnext Japan Inc 半導体光素子、光送信モジュール、光送受信モジュール、光伝送装置、及び、それらの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274642A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 半導体発光素子及びその製造方法
KR100388485B1 (ko) * 2001-05-31 2003-06-25 한국전자통신연구원 다파장 단일모드 레이저 어레이 및 그 제조 방법
US8149890B2 (en) * 2008-12-04 2012-04-03 Electronics And Telecommunications Research Institute Multiple distributed feedback laser devices
US8355418B2 (en) * 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
WO2017138668A1 (ja) * 2016-02-12 2017-08-17 古河電気工業株式会社 半導体レーザ素子、回折格子構造、および回折格子
JP2018037495A (ja) * 2016-08-30 2018-03-08 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子
KR102368946B1 (ko) * 2017-12-15 2022-03-04 한국전자통신연구원 파장 가변 레이저 장치 및 이를 제조하는 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151088A (ja) 2010-01-19 2011-08-04 Opnext Japan Inc 半導体光素子、光送信モジュール、光送受信モジュール、光伝送装置、及び、それらの製造方法

Also Published As

Publication number Publication date
JP2025096459A (ja) 2025-06-26
WO2024142875A1 (ja) 2024-07-04
JPWO2024142875A1 (https=) 2024-07-04
JP7667524B2 (ja) 2025-04-23
DE112023005425T5 (de) 2025-10-09
CN120129999A (zh) 2025-06-10

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Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)