JP7667524B2 - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
JP7667524B2
JP7667524B2 JP2024567408A JP2024567408A JP7667524B2 JP 7667524 B2 JP7667524 B2 JP 7667524B2 JP 2024567408 A JP2024567408 A JP 2024567408A JP 2024567408 A JP2024567408 A JP 2024567408A JP 7667524 B2 JP7667524 B2 JP 7667524B2
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Japan
Prior art keywords
nitride semiconductor
semiconductor layer
layer
side nitride
diffraction grating
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JP2024567408A
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English (en)
Japanese (ja)
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JPWO2024142875A1 (https=
JPWO2024142875A5 (https=
Inventor
嘉隆 中津
和隆 津嘉山
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Nichia Corp
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Nichia Corp
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Publication of JPWO2024142875A5 publication Critical patent/JPWO2024142875A5/ja
Priority to JP2025064030A priority Critical patent/JP2025096459A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2024567408A 2022-12-26 2023-12-11 半導体レーザ素子 Active JP7667524B2 (ja)

Priority Applications (1)

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JP2025064030A JP2025096459A (ja) 2022-12-26 2025-04-09 半導体レーザ素子

Applications Claiming Priority (3)

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JP2022208079 2022-12-26
JP2022208079 2022-12-26
PCT/JP2023/044165 WO2024142875A1 (ja) 2022-12-26 2023-12-11 半導体レーザ素子

Related Child Applications (1)

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JP2025064030A Division JP2025096459A (ja) 2022-12-26 2025-04-09 半導体レーザ素子

Publications (3)

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JPWO2024142875A1 JPWO2024142875A1 (https=) 2024-07-04
JPWO2024142875A5 JPWO2024142875A5 (https=) 2025-03-07
JP7667524B2 true JP7667524B2 (ja) 2025-04-23

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ID=91717564

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JP2024567408A Active JP7667524B2 (ja) 2022-12-26 2023-12-11 半導体レーザ素子
JP2025064030A Pending JP2025096459A (ja) 2022-12-26 2025-04-09 半導体レーザ素子

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JP2025064030A Pending JP2025096459A (ja) 2022-12-26 2025-04-09 半導体レーザ素子

Country Status (5)

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JP (2) JP7667524B2 (https=)
KR (1) KR20250129608A (https=)
CN (1) CN120129999A (https=)
DE (1) DE112023005425T5 (https=)
WO (1) WO2024142875A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020181532A1 (en) 2001-05-31 2002-12-05 Sang-Wan Ryu Multi-wavelength semiconductor laser array and method for fabricating the same
US20110090932A1 (en) 2008-12-04 2011-04-21 Kyung Hyun Park Multiple distributed feedback laser devices
JP2013505586A (ja) 2009-09-17 2013-02-14 ソラア インコーポレーテッド ｛２０−２１｝ガリウム及び窒素含有基板上の低電圧レーザダイオード
WO2017138668A1 (ja) 2016-02-12 2017-08-17 古河電気工業株式会社 半導体レーザ素子、回折格子構造、および回折格子
JP2018037495A (ja) 2016-08-30 2018-03-08 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子
US10277008B1 (en) 2017-12-15 2019-04-30 Electronics And Telecommunications Research Institute Tunable laser device and method for manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274642A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 半導体発光素子及びその製造方法
JP5534826B2 (ja) 2010-01-19 2014-07-02 日本オクラロ株式会社 半導体光素子、光送信モジュール、光送受信モジュール、光伝送装置、及び、それらの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020181532A1 (en) 2001-05-31 2002-12-05 Sang-Wan Ryu Multi-wavelength semiconductor laser array and method for fabricating the same
US20110090932A1 (en) 2008-12-04 2011-04-21 Kyung Hyun Park Multiple distributed feedback laser devices
JP2013505586A (ja) 2009-09-17 2013-02-14 ソラア インコーポレーテッド ｛２０−２１｝ガリウム及び窒素含有基板上の低電圧レーザダイオード
WO2017138668A1 (ja) 2016-02-12 2017-08-17 古河電気工業株式会社 半導体レーザ素子、回折格子構造、および回折格子
JP2018037495A (ja) 2016-08-30 2018-03-08 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子
US10277008B1 (en) 2017-12-15 2019-04-30 Electronics And Telecommunications Research Institute Tunable laser device and method for manufacturing the same

Also Published As

Publication number Publication date
JP2025096459A (ja) 2025-06-26
WO2024142875A1 (ja) 2024-07-04
JPWO2024142875A1 (https=) 2024-07-04
DE112023005425T5 (de) 2025-10-09
KR20250129608A (ko) 2025-08-29
CN120129999A (zh) 2025-06-10

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