JPWO2024142875A5 - - Google Patents
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- Publication number
- JPWO2024142875A5 JPWO2024142875A5 JP2024567408A JP2024567408A JPWO2024142875A5 JP WO2024142875 A5 JPWO2024142875 A5 JP WO2024142875A5 JP 2024567408 A JP2024567408 A JP 2024567408A JP 2024567408 A JP2024567408 A JP 2024567408A JP WO2024142875 A5 JPWO2024142875 A5 JP WO2024142875A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- side nitride
- layer
- diffraction grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 46
- 150000004767 nitrides Chemical class 0.000 claims 38
- 230000000737 periodic effect Effects 0.000 claims 7
- 230000004888 barrier function Effects 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 238000005253 cladding Methods 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025064030A JP2025096459A (ja) | 2022-12-26 | 2025-04-09 | 半導体レーザ素子 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022208079 | 2022-12-26 | ||
| JP2022208079 | 2022-12-26 | ||
| PCT/JP2023/044165 WO2024142875A1 (ja) | 2022-12-26 | 2023-12-11 | 半導体レーザ素子 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025064030A Division JP2025096459A (ja) | 2022-12-26 | 2025-04-09 | 半導体レーザ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024142875A1 JPWO2024142875A1 (https=) | 2024-07-04 |
| JPWO2024142875A5 true JPWO2024142875A5 (https=) | 2025-03-07 |
| JP7667524B2 JP7667524B2 (ja) | 2025-04-23 |
Family
ID=91717564
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024567408A Active JP7667524B2 (ja) | 2022-12-26 | 2023-12-11 | 半導体レーザ素子 |
| JP2025064030A Pending JP2025096459A (ja) | 2022-12-26 | 2025-04-09 | 半導体レーザ素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025064030A Pending JP2025096459A (ja) | 2022-12-26 | 2025-04-09 | 半導体レーザ素子 |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP7667524B2 (https=) |
| KR (1) | KR20250129608A (https=) |
| CN (1) | CN120129999A (https=) |
| DE (1) | DE112023005425T5 (https=) |
| WO (1) | WO2024142875A1 (https=) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11274642A (ja) * | 1998-03-19 | 1999-10-08 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| KR100388485B1 (ko) * | 2001-05-31 | 2003-06-25 | 한국전자통신연구원 | 다파장 단일모드 레이저 어레이 및 그 제조 방법 |
| US8149890B2 (en) * | 2008-12-04 | 2012-04-03 | Electronics And Telecommunications Research Institute | Multiple distributed feedback laser devices |
| US8355418B2 (en) * | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
| JP5534826B2 (ja) | 2010-01-19 | 2014-07-02 | 日本オクラロ株式会社 | 半導体光素子、光送信モジュール、光送受信モジュール、光伝送装置、及び、それらの製造方法 |
| WO2017138668A1 (ja) * | 2016-02-12 | 2017-08-17 | 古河電気工業株式会社 | 半導体レーザ素子、回折格子構造、および回折格子 |
| JP2018037495A (ja) * | 2016-08-30 | 2018-03-08 | パナソニックＩｐマネジメント株式会社 | 窒化物半導体レーザ素子 |
| KR102368946B1 (ko) * | 2017-12-15 | 2022-03-04 | 한국전자통신연구원 | 파장 가변 레이저 장치 및 이를 제조하는 방법 |
-
2023
- 2023-12-11 JP JP2024567408A patent/JP7667524B2/ja active Active
- 2023-12-11 DE DE112023005425.8T patent/DE112023005425T5/de active Pending
- 2023-12-11 WO PCT/JP2023/044165 patent/WO2024142875A1/ja not_active Ceased
- 2023-12-11 CN CN202380075105.0A patent/CN120129999A/zh active Pending
- 2023-12-11 KR KR1020257006180A patent/KR20250129608A/ko active Pending
-
2025
- 2025-04-09 JP JP2025064030A patent/JP2025096459A/ja active Pending
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