JPWO2023276909A5 - - Google Patents

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Publication number
JPWO2023276909A5
JPWO2023276909A5 JP2023531911A JP2023531911A JPWO2023276909A5 JP WO2023276909 A5 JPWO2023276909 A5 JP WO2023276909A5 JP 2023531911 A JP2023531911 A JP 2023531911A JP 2023531911 A JP2023531911 A JP 2023531911A JP WO2023276909 A5 JPWO2023276909 A5 JP WO2023276909A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
semiconductor layer
layer
side nitride
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023531911A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023276909A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/025431 external-priority patent/WO2023276909A1/ja
Publication of JPWO2023276909A1 publication Critical patent/JPWO2023276909A1/ja
Publication of JPWO2023276909A5 publication Critical patent/JPWO2023276909A5/ja
Pending legal-status Critical Current

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JP2023531911A 2021-06-29 2022-06-27 Pending JPWO2023276909A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021107383 2021-06-29
PCT/JP2022/025431 WO2023276909A1 (ja) 2021-06-29 2022-06-27 半導体レーザ素子

Publications (2)

Publication Number Publication Date
JPWO2023276909A1 JPWO2023276909A1 (https=) 2023-01-05
JPWO2023276909A5 true JPWO2023276909A5 (https=) 2025-06-02

Family

ID=84691346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023531911A Pending JPWO2023276909A1 (https=) 2021-06-29 2022-06-27

Country Status (5)

Country Link
US (1) US20240332911A1 (https=)
JP (1) JPWO2023276909A1 (https=)
CN (1) CN117581432A (https=)
DE (1) DE112022003309T5 (https=)
WO (1) WO2023276909A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8837545B2 (en) * 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
JP2013021023A (ja) * 2011-07-07 2013-01-31 Sumitomo Electric Ind Ltd 半導体レーザ素子
JP2018037495A (ja) * 2016-08-30 2018-03-08 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子
JPWO2019146321A1 (ja) 2018-01-29 2021-01-07 パナソニック株式会社 半導体レーザ素子

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