CN120129999A - 半导体激光元件 - Google Patents

半导体激光元件 Download PDF

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Publication number
CN120129999A
CN120129999A CN202380075105.0A CN202380075105A CN120129999A CN 120129999 A CN120129999 A CN 120129999A CN 202380075105 A CN202380075105 A CN 202380075105A CN 120129999 A CN120129999 A CN 120129999A
Authority
CN
China
Prior art keywords
nitride semiconductor
semiconductor layer
layer
side nitride
diffraction grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380075105.0A
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English (en)
Chinese (zh)
Inventor
中津嘉隆
津嘉山和隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of CN120129999A publication Critical patent/CN120129999A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN202380075105.0A 2022-12-26 2023-12-11 半导体激光元件 Pending CN120129999A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-208079 2022-12-26
JP2022208079 2022-12-26
PCT/JP2023/044165 WO2024142875A1 (ja) 2022-12-26 2023-12-11 半導体レーザ素子

Publications (1)

Publication Number Publication Date
CN120129999A true CN120129999A (zh) 2025-06-10

Family

ID=91717564

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380075105.0A Pending CN120129999A (zh) 2022-12-26 2023-12-11 半导体激光元件

Country Status (5)

Country Link
JP (2) JP7667524B2 (https=)
KR (1) KR20250129608A (https=)
CN (1) CN120129999A (https=)
DE (1) DE112023005425T5 (https=)
WO (1) WO2024142875A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274642A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 半導体発光素子及びその製造方法
KR100388485B1 (ko) * 2001-05-31 2003-06-25 한국전자통신연구원 다파장 단일모드 레이저 어레이 및 그 제조 방법
US8149890B2 (en) * 2008-12-04 2012-04-03 Electronics And Telecommunications Research Institute Multiple distributed feedback laser devices
US8355418B2 (en) * 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
JP5534826B2 (ja) 2010-01-19 2014-07-02 日本オクラロ株式会社 半導体光素子、光送信モジュール、光送受信モジュール、光伝送装置、及び、それらの製造方法
WO2017138668A1 (ja) * 2016-02-12 2017-08-17 古河電気工業株式会社 半導体レーザ素子、回折格子構造、および回折格子
JP2018037495A (ja) * 2016-08-30 2018-03-08 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子
KR102368946B1 (ko) * 2017-12-15 2022-03-04 한국전자통신연구원 파장 가변 레이저 장치 및 이를 제조하는 방법

Also Published As

Publication number Publication date
JP2025096459A (ja) 2025-06-26
WO2024142875A1 (ja) 2024-07-04
JPWO2024142875A1 (https=) 2024-07-04
JP7667524B2 (ja) 2025-04-23
DE112023005425T5 (de) 2025-10-09
KR20250129608A (ko) 2025-08-29

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