KR20240038985A - 에칭 방법 및 반도체 소자의 제조 방법 - Google Patents

에칭 방법 및 반도체 소자의 제조 방법 Download PDF

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Publication number
KR20240038985A
KR20240038985A KR1020247004737A KR20247004737A KR20240038985A KR 20240038985 A KR20240038985 A KR 20240038985A KR 1020247004737 A KR1020247004737 A KR 1020247004737A KR 20247004737 A KR20247004737 A KR 20247004737A KR 20240038985 A KR20240038985 A KR 20240038985A
Authority
KR
South Korea
Prior art keywords
etching
gas
less
etched
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247004737A
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English (en)
Korean (ko)
Inventor
카즈마 마츠이
Original Assignee
가부시끼가이샤 레조낙
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 레조낙 filed Critical 가부시끼가이샤 레조낙
Publication of KR20240038985A publication Critical patent/KR20240038985A/ko
Pending legal-status Critical Current

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Classifications

    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)
KR1020247004737A 2021-08-10 2022-07-05 에칭 방법 및 반도체 소자의 제조 방법 Pending KR20240038985A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021130524 2021-08-10
JPJP-P-2021-130524 2021-08-10
PCT/JP2022/026719 WO2023017696A1 (ja) 2021-08-10 2022-07-05 エッチング方法及び半導体素子の製造方法

Publications (1)

Publication Number Publication Date
KR20240038985A true KR20240038985A (ko) 2024-03-26

Family

ID=85199933

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247004737A Pending KR20240038985A (ko) 2021-08-10 2022-07-05 에칭 방법 및 반도체 소자의 제조 방법

Country Status (5)

Country Link
US (1) US20240363356A1 (https=)
JP (1) JPWO2023017696A1 (https=)
KR (1) KR20240038985A (https=)
TW (1) TWI819706B (https=)
WO (1) WO2023017696A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100236055B1 (ko) 1997-04-28 1999-12-15 김영환 전계 방출 소자 및 제조방법
WO2018181104A1 (ja) 2017-03-27 2018-10-04 関東電化工業株式会社 ドライエッチング方法またはドライクリーニング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6139986B2 (ja) * 2013-05-31 2017-05-31 東京エレクトロン株式会社 エッチング方法
US9425041B2 (en) * 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
JP6426489B2 (ja) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 エッチング方法
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
JP7145740B2 (ja) * 2018-01-22 2022-10-03 東京エレクトロン株式会社 エッチング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100236055B1 (ko) 1997-04-28 1999-12-15 김영환 전계 방출 소자 및 제조방법
WO2018181104A1 (ja) 2017-03-27 2018-10-04 関東電化工業株式会社 ドライエッチング方法またはドライクリーニング方法

Also Published As

Publication number Publication date
JPWO2023017696A1 (https=) 2023-02-16
TW202310028A (zh) 2023-03-01
TWI819706B (zh) 2023-10-21
WO2023017696A1 (ja) 2023-02-16
US20240363356A1 (en) 2024-10-31

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